公开(公告)号：US08037878B2

公开(公告)日：2011-10-18

申请号：US12734581

申请日：2008-11-17

申请人： Koji Kitagawa ,  Tadahiro Kato ,  Yukio Itoi ,  Tomiichi Sudou

发明人： Koji Kitagawa ,  Tadahiro Kato ,  Yukio Itoi ,  Tomiichi Sudou

IPC分类号： B28D1/06 ,  B24B49/00

CPC分类号： B28D5/045 ,  B24B27/0633 ,  B28D5/0082

摘要： The present invention is a wire saw in which a wire for slicing is wound around a plurality of rollers to form a wire row; the wire for slicing is driven axially in a reciprocating direction; a workpiece is sliced simultaneously at a plurality of points arranged in an axial direction by feeding the workpiece against the wire row with the workpiece cut into while a slurry is supplied to the wire for slicing; the wire saw controlling in such a manner that the workpiece is extracted while the wire is caused to travel at a speed of 2 m/min or less at the time of extracting the workpiece from the wire row after slicing the workpiece. As a result, there is provided a wire saw in which the workpiece sliced with the wire row of the wire saw can be extracted from the wire row with a simple structure without a negative influence on its slicing surface.

摘要翻译： 本发明是一种线锯，其中用于切割的线缠绕在多个辊上以形成线排; 用于切片的线材沿往复方向轴向驱动; 通过将工件切割成同时将工件供给到用于切割的线材的工件，将工件抵靠电线排进给到轴向方向上的多个点同时切割工件; 该线锯控制方法是在切割工件之后从线列中提取工件时以2m / min以下的速度使导线行进的同时取出工件。 结果，提供了一种线锯，其中用线锯的线排切割的工件可以以简单的结构从线排提取而不会对其切片表面产生负面影响。

公开(公告)号：US06432837B1

公开(公告)日：2002-08-13

申请号：US09778679

申请日：2001-02-07

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

公开(公告)号：US5474644A

公开(公告)日：1995-12-12

申请号：US278132

申请日：1994-07-21

申请人： Tadahiro Kato ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hideo Kudo

IPC分类号： H01L21/306 ,  B05C5/00

CPC分类号： H01L21/02019 ,  H01L21/30604

摘要： A method and an apparatus for high-flatness etching a semiconductor single crystal wafer wherein said wafer is so rotated in a flow of an ethchant radially spreading in a plane that the main surface of said wafer may move parallelly with the flow of said etchant.

摘要翻译： 一种用于高平坦度蚀刻半导体单晶晶片的方法和装置，其中所述晶片以在所述晶片的主表面可以与所述蚀刻剂的流动平行移动的平面中径向扩散的脉冲流旋转。

公开(公告)号：US08562390B2

公开(公告)日：2013-10-22

申请号：US12990236

申请日：2009-04-20

申请人： Kenji Kobayashi ,  Tadahiro Kato

发明人： Kenji Kobayashi ,  Tadahiro Kato

IPC分类号： B24B1/00

CPC分类号： B24B37/08 ,  B24B37/28

摘要： A double-disc grinding apparatus having at least: a rotatable ring-shaped holder for supporting a sheet-like wafer having a notch for indicating a crystal orientation from an outer circumference side along a radial direction, the holder having a protruding portion to be engaged with the crystal-orientation-indicating notch; and a pair of grindstones for simultaneously grinding both surfaces of the wafer supported by the holder, in which the holder is provided with at least one protruding portion separately from the protruding portion to be engaged with the crystal-orientation-indicating notch, and the both surfaces of the wafer are simultaneously ground by the pair of the grindstones while the wafer is supported and rotated with the at least one protruding portion being engaged with a wafer-supporting notch formed on the wafer.

摘要翻译： 一种双盘磨削装置，至少具有：可旋转的环状保持器，用于支撑具有用于沿着径向从外周侧指示晶体取向的切口的片状晶片，所述保持器具有待接合的突出部分 具有晶体取向指示凹槽; 以及一对砂轮，用于同时研磨由保持器支撑的晶片的两个表面，其中保持器设置有与突出部分分开的至少一个突出部分以与晶体取向指示槽口接合，并且两者 晶片的表面通过一对磨石同时磨削，同时晶片被支撑并旋转，其中至少一个突出部分与形成在晶片上的晶片支撑凹口接合。

公开(公告)号：US20090170406A1

公开(公告)日：2009-07-02

申请号：US12227894

申请日：2007-05-11

申请人： Tadahiro Kato

发明人： Tadahiro Kato

IPC分类号： B24B1/00 ,  B24B9/06

CPC分类号： B24B9/065 ,  B24B49/03 ,  B24B49/18 ,  H01L21/02021

摘要： The present invention is a wafer production method at least comprising a chamfering step of chamfering a wafer sliced from an ingot using a grindstone for chamfering, and a step of obtaining a product wafer thinner than the chamfered wafer by performing at least one or more than one of the following processes on the chamfered wafer: flattening, etching, and polishing, the method at least comprising a correction step of chamfering a dummy wafer equivalent in thickness to the product wafer, measuring the chamfered dummy wafer for its chamfered shape, and correcting the shape of the grindstone for chamfering based on the measured chamfered shape of the dummy wafer, at least before the chamfering step, thereby chamfering the wafer sliced from the ingot using the grindstone for chamfering having its shape corrected. Thus, it is possible to provide a wafer production method allowing a product wafer with a desired chamfered shape to be obtained in a short period of time.

摘要翻译： 本发明是一种晶片生产方法，至少包括使用用于倒角的磨石从晶块切片的晶片倒角的倒角步骤，以及通过执行至少一个或多于一个的获得比倒角晶片更薄的产品晶片的步骤 在倒角晶片上进行以下处理：平坦化，蚀刻和抛光，该方法至少包括将厚度相当的伪晶片倒角到产品晶片的校正步骤，测量倒角形状的倒角虚设晶片，以及校正 至少在倒角步骤之前，基于所测量的虚设晶片的倒角形状的倒角磨石的形状，从而使用其形状校正的倒角用磨石倒角从晶锭切片的晶片。 因此，可以提供允许在短时间内获得具有所需倒角形状的产品晶片的晶片制造方法。

公开(公告)号：US07507146B2

公开(公告)日：2009-03-24

申请号：US11666082

申请日：2005-10-12

申请人： Tadahiro Kato ,  Masayoshi Sekizawa ,  Mamoru Okada ,  Hisashi Kijima

发明人： Tadahiro Kato ,  Masayoshi Sekizawa ,  Mamoru Okada ,  Hisashi Kijima

IPC分类号： B24B1/00

CPC分类号： H01L21/02008 ,  B24B9/065 ,  B24B37/08 ,  H01L21/02021

摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.

摘要翻译： 本发明是一种半导体晶片的制造方法，其特征在于，包括：至少双面研磨工序; 和倒角部分抛光步骤; 其中，作为第一倒角部分研磨工序，至少对所述晶片的倒角部进行研磨，使得所述倒角部的各主面侧的倒角面与抛光垫接触; 然后进行双面抛光; 作为第二倒角部分抛光步骤，至少抛光晶片的倒角部分，使得倒角部分的端面与抛光垫接触，并且晶片的两个主表面都不与 抛光垫 因此，当制造半导体晶片时，可以消除在双面抛光工艺中的倒角部分产生的刮痕和产生，并且可以防止在主表面的周边部分中的抛光过度抛光倒角部分 。 因此，提供了即使在倒角部附近也具有高平坦度的半导体晶片的制造方法和半导体晶片。

公开(公告)号：US06726525B1

公开(公告)日：2004-04-27

申请号：US09831893

申请日：2001-08-28

申请人： Tadahiro Kato ,  Shunichi Ikeda ,  Kenji Ohkura

发明人： Tadahiro Kato ,  Shunichi Ikeda ,  Kenji Ohkura

IPC分类号： B24B4900

CPC分类号： B24B7/17 ,  B24B7/228

摘要： A double side grinding apparatus comprises a pair of grinding wheels (4), work rotating device (1) and moving device (2). The apparatus operates to bring the grinding faces (4a) into contact with the respective work surfaces (a) to advance each grinding face to the position of a predetermined depth of cut by moving at least one of the grinding wheels (4) while rotating the grinding wheels (4) and rotating the work (W) by the device (1) about an axis thereof as supported in a predetermined grinding position so that an outer periphery of the work (W) intersects outer peripheries of the grinding wheels (4) with a center (c) of the work (W) positioned inwardly of the grinding faces (4a), stop each of the grinding wheels (4) from advancing in the direction of depth of cut, move each of the grinding wheels (4) and the work (W) by the moving device (2) relative to each other in a direction parallel to the work surface (a) until the center (c) of the work (W) is positioned externally of the grinding faces (4a), and separate the grinding faces (4a) from the work surfaces (a). The surfaces of the work can be ground at the same time easily with diminished variations in the thickness of the work although the apparatus is small-sized.

摘要翻译： 双面研磨装置包括一对砂轮（4），工作旋转装置（1）和移动装置（2）。 该装置用于使研磨面（4a）与相应的工作表面（a）接触，以通过在旋转所述研磨轮（4）的同时移动至少一个砂轮（4）将每个研磨面前进到预定切割深度的位置 砂轮（4），并且通过装置（1）围绕其轴线旋转工件（W），以预定的研磨位置支撑，使得工件（W）的外周与砂轮（4）的外周相交， 通过将工件（W）的中心（c）定位在研磨面（4a）的内侧，阻止每个研磨轮（4）沿切割深度的方向前进，使每个研磨轮（4）移动， 以及通过移动装置（2）在与工件表面（a）平行的方向上的工件（W），直到工件（W）的中心（c）位于磨削面（4a）的外侧， ，并将研磨面（4a）与工作面（a）分开。 工件的表面可以容易地研磨，同时尽管设备的尺寸小，但是减小了工件厚度的变化。

公开(公告)号：US06660337B2

公开(公告)日：2003-12-09

申请号：US10145148

申请日：2002-05-15

申请人： Naoya Haruta ,  Tadahiro Kato ,  Takesi Tomiyama ,  Koichi Seike

发明人： Naoya Haruta ,  Tadahiro Kato ,  Takesi Tomiyama ,  Koichi Seike

IPC分类号： B05D302

CPC分类号： B32B27/32 ,  B29C45/14811 ,  B32B27/08 ,  B32B27/20 ,  B32B27/308 ,  B32B2451/00 ,  B32B2605/08 ,  C08J7/047 ,  C08J2323/02 ,  C08J2475/00 ,  Y10T428/31 ,  Y10T428/3154 ,  Y10T428/31551 ,  Y10T428/31587 ,  Y10T428/31855 ,  Y10T428/31909 ,  Y10T428/31913 ,  Y10T428/31928 ,  Y10T428/31935

摘要： A decorative film for use in plastics molding, said decorative film being a laminate film prepared by outwardly and successively laminating a polyolefin film layer, a primer layer, optionally a topcoating layer and a releasable layer, said primer layer being a coating film formed from an isocyanate-curing type resin composition containing (A) a hydroxyl group-containing resin having a hydroxyl number of 30 to 200 KOH mg/g on an average and a weight average molecular weight of 1000 to 80000, (B) a polyolefin based resin and (C) a (blocked)polyisocyanate compound in such mixing amounts that a number of the isocyanate group in the component (C) is in the range of 0.1 to 0.9 per one hydroxyl group in the component (A) and that the component (B) is in the range of 1 to 90% by weight based on a total weight of the components (A), (B) and (C), and having a static glass transition temperature of 20 to 70° C., an elongation of 10% or more and a tensile strength of 0.5 kgf/mm2 or more; a process for preparing the decorative film and an injection-molded part by use of the decorative film.

摘要翻译： 一种用于塑料成型的装饰膜，所述装饰膜是通过向外且相继层压聚烯烃膜层，底漆层，任选的表面涂层和可剥离层制备的层压膜，所述底漆层是由 异氰酸酯固化型树脂组合物，其含有（A）羟值为30〜200KOHmg / g的含羟基的树脂，平均重均分子量为1000〜80000，（B）聚烯烃类树脂和 （C）以这样的混合量的（封闭的）多异氰酸酯化合物，即组分（C）中的多个异氰酸酯基团在组分（A）中每一个羟基为0.1至0.9，组分（B ）在组分（A），（B）和（C）的总重量的1至90重量％的范围内，并且具有20至70℃的静态玻璃化转变温度， 10％以上，拉伸强度为0.5kgf / mm 2以上; 通过使用装饰膜制备装饰膜和注射成型部件的方法。

公开(公告)号：US06491836B1

公开(公告)日：2002-12-10

申请号：US09582434

申请日：2000-06-26

申请人： Tadahiro Kato ,  Sadayuki Okuni ,  Shunichi Ikeda ,  Keiichi Okabe ,  Hisashi Oshima

发明人： Tadahiro Kato ,  Sadayuki Okuni ,  Shunichi Ikeda ,  Keiichi Okabe ,  Hisashi Oshima

IPC分类号： H01L21302

CPC分类号： H01L21/02013 ,  B24B7/228 ,  B24B37/042 ,  H01L21/02008 ,  H01L21/02024 ,  H01L21/02043 ,  H01L21/30604

摘要： A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.

摘要翻译： 一种生产半导体晶片的方法，其产生具有高平坦度和背面特性的晶片，以解决通过常规的表面研磨/双面抛光方法制造的晶片的背面以及在制造过程中观察到的问题。 该方法包括通过表面研磨装置使晶片的两侧平坦化，通过蚀刻处理消除机械损伤层，然后对晶片的前表面进行单面抛光处理，其中晶片的背面具有光泽度 范围为20-80％。

公开(公告)号：US5800725A

公开(公告)日：1998-09-01

申请号：US789798

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/304 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02008

摘要： A method of manufacturing semiconductor wafers includes a double side primary polishing step, a back side etching step and a single side mirror polishing step. This method is capable of easy sensor detection of the front and back sides of the wafer, wafer processing of higher flatness level by forming etched rough surface at the back side of the double side polished wafer and setting up of wafer manufacturing process including a double side polishing step.

摘要翻译： 制造半导体晶片的方法包括双面一次抛光步骤，背面蚀刻步骤和单面镜面抛光步骤。 该方法能够容易地传感器检测晶片的正面和背面，通过在双面抛光晶片的背面形成蚀刻的粗糙表面并设置包括双面的晶片制造工艺，从而提高平坦度的晶片处理 抛光步骤