公开(公告)号：US5015330A

公开(公告)日：1991-05-14

申请号：US486416

申请日：1990-02-28

申请人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

发明人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

IPC分类号： C23C16/02 ,  C23C16/452 ,  C23C16/54 ,  H01J37/32 ,  B44C1/22 ,  B05D3/06 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C23C16/0245 ,  C23C16/452 ,  C23C16/54 ,  Y10S156/917 ,  Y10S438/905 ,  Y10S438/913

摘要： A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

摘要翻译： 一种成膜方法包括以下步骤：将待处理的多个物体放置在反应容器中，并在加热条件下通过等离子体蚀刻除去放置在反应容器中的待处理物体上的天然氧化起始膜 在停止供给蚀刻气体之后排出蚀刻气体，以停止等离子体的制造，并且在反应容器内供给成膜气体而不使反应容器对空气开放，从而在物体上形成膜。

公开(公告)号：US4957880A

公开(公告)日：1990-09-18

申请号：US346359

申请日：1989-04-28

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/268 ,  H01L21/32051 ,  H01L21/76879 ,  Y10S148/071 ,  Y10S148/09

摘要： In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

摘要翻译： 在半导体器件的制造方法中，在绝缘层上形成有连接层，在反应气体的气氛中，通过在具有波长的光中选择性地形成连接层的区域， 在200〜1000nm的范围内，并且在光照射区域中通过CVD法选择性地沉积连接层形成衬底，直到获得所需物质厚度。

公开(公告)号：US4699801A

公开(公告)日：1987-10-13

申请号：US832875

申请日：1986-02-26

申请人： Hitoshi Ito ,  Takahiko Moriya

发明人： Hitoshi Ito ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/76879 ,  H01L21/2686 ,  H01L21/28562 ,  H01L21/32051

摘要： A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

摘要翻译： 以这样的方式制造半导体器件，即将具有400至1000nm范围内的波长的光照射在基板上，以将材料气体的接合手激发到振动状态，并且在 基板，按照化学气相沉积法。

公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US4746549A

公开(公告)日：1988-05-24

申请号：US3550

申请日：1987-01-15

申请人： Hitoshi Ito ,  Takahiko Moriya

发明人： Hitoshi Ito ,  Takahiko Moriya

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/08 ,  H01L21/76879

摘要： In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

摘要翻译： 在其表面具有硅层和绝缘层的基板上形成难熔金属薄膜的方法中，难熔金属的卤素化合物与用于提供原料气体的氢气，卤化氢气体或 将由形成难熔金属的卤素化合物的第一卤素的第二卤素组成的卤素气体加入到原料气体中，并且通过使用由此获得的混合气体，在表面上选择性地进行气相沉积难熔金属 的衬底的硅层。

公开(公告)号：US4597167A

公开(公告)日：1986-07-01

申请号：US641191

申请日：1984-08-16

申请人： Takahiko Moriya ,  Saburo Nakada

发明人： Takahiko Moriya ,  Saburo Nakada

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L29/417 ,  H01L21/225

CPC分类号： H01L29/41775 ,  H01L21/28 ,  H01L21/28562 ,  H01L21/76879 ,  Y10S148/019 ,  Y10S148/02 ,  Y10S148/026

摘要： A method of producing a semiconductor device, including the steps of introducing an impurity of one conductivity type into a semiconductor substrate of an opposite conductivity type having an insulating film pattern formed on a surface thereof, using the insulating film pattern as a mask to form a diffusion layer; and forming a metal film on the diffusion layer by selective vapor growth with a mixture of a metal source gas and a carrier gas used as a feed gas. The vapor growth is carried out such that the distance of entry of the metal film from the edge of the insulating film pattern to the interface between the insulating film pattern and the diffusion layer is smaller than the depth of the pn junction of the diffusion layer. The particular method makes it possible to achieve a selective vapor growth of a metal film on the diffusion layer without deteriorating the pn junction characteristics.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：使用绝缘膜图案作为掩模将具有一种导电类型的杂质引入到具有形成在其表面上的绝缘膜图案的相反导电类型的半导体衬底中以形成 扩散层; 以及通过选择性气相生长在金属源气体和用作进料气体的载气的混合物上在扩散层上形成金属膜。 进行蒸气生长，使得金属膜从绝缘膜图案的边缘进入绝缘膜图案和扩散层之间的界面的距离小于扩散层的pn结的深度。 特定的方法使得可以在扩散层上实现金属膜的选择性气相生长而不劣化pn结特性。

公开(公告)号：US4582563A

公开(公告)日：1986-04-15

申请号：US675859

申请日：1984-11-28

申请人： Yoshikazu Hazuki ,  Takahiko Moriya

发明人： Yoshikazu Hazuki ,  Takahiko Moriya

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  B44C1/22 ,  C23F1/02 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L21/76879

摘要： First conductive members are buried in first holes formed in a first insulating film to connect the second interconnection layers, formed through first and second insulating films, to a semiconductor substrate. Second conductive members are buried in second holes formed to be positioned on the first holes of the second insulating film. Thus, the reliability of a semiconductor device of a multi-layer interconnection structure is improved, and the integration thereof is improved.

摘要翻译： 第一导电构件被埋在形成在第一绝缘膜中的第一孔中，以将通过第一和第二绝缘膜形成的第二互连层连接到半导体衬底。 第二导电构件被埋在形成为定位在第二绝缘膜的第一孔上的第二孔中。 因此，提高了多层互连结构的半导体器件的可靠性，并且提高了其一体化。