公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5252133A

公开(公告)日：1993-10-12

申请号：US809122

申请日：1991-12-18

申请人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

发明人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  H01L21/22 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C30B25/14

摘要： A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree.

公开(公告)号：US5316472A

公开(公告)日：1994-05-31

申请号：US991597

申请日：1992-12-16

申请人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

发明人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

IPC分类号： H01L21/324 ,  C23C16/458 ,  C30B25/12 ,  H01L21/22 ,  H01L21/673 ,  F27D3/12

CPC分类号： H01L21/67309 ,  C23C16/4583 ,  C30B25/12

摘要： A semiconductor wafer boat used in a vertical CVD apparatus includes four columns fixed to upper and lower support plates. Each of the columns has a plurality of first grooves arranged at regular intervals in the vertical direction so as to place wafers in substantially parallel to each other, and a plurality of second grooves formed alternately with the first grooves. A plate ring is provided for each of the second grooves so as to improve the uniformity of thickness of a film to be formed on each wafer. Each ring has an outer diameter larger than that of a wafer, and an inner diameter smaller than that of the wafer. Each ring is placed such that there is a clearance for transferring each wafer between each ring and each wafer in the vertical direction.

摘要翻译： 在垂直CVD装置中使用的半导体晶片舟包括固定到上支撑板和下支撑板的四列。 每个列具有在垂直方向上以规则间隔布置的多个第一凹槽，以便将晶​​片彼此基本平行地放置，以及与第一凹槽交替形成的多个第二凹槽。 为每个第二槽设置板环，以提高在每个晶片上形成的膜的厚度的均匀性。 每个环的外径大于晶片的外径，内径小于晶片的内径。 每个环被放置成使得在垂直方向上存在用于在每个环和每个晶片之间传送每个晶片的间隙。

公开(公告)号：US5500388A

公开(公告)日：1996-03-19

申请号：US202457

申请日：1994-02-28

申请人： Reiji Niino ,  Tomoyuki Ohbu ,  Hiroaki Ikegawa ,  Ken Nakao ,  Yoshiyuki Fujita ,  Tsutomu Haraoka ,  Makoto Kobayashi ,  Naoya Kaneda ,  Hiroshi Kumada

发明人： Reiji Niino ,  Tomoyuki Ohbu ,  Hiroaki Ikegawa ,  Ken Nakao ,  Yoshiyuki Fujita ,  Tsutomu Haraoka ,  Makoto Kobayashi ,  Naoya Kaneda ,  Hiroshi Kumada

IPC分类号： C23C16/46 ,  H01L21/20 ,  H01L21/285

CPC分类号： C23C16/463 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28512

摘要： In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers. This suppresses the growth of a natural oxidation film and improves characteristics of a semiconductor device. The same principle may apply to an oxide film formation and an impurity dispersion.

摘要翻译： 为了在半导体晶片的表面上形成薄膜，将多个晶片分别安装在晶片舟的环形安装件上，同时将反应管内的温度设定为例如400℃ 氮气气氛。 在将晶片舟装载到反应管中之后，以例如100℃/ min的速率将反应管内的温度升高至例如620℃，并将SiH 4气体供应到 硅衬底以形成多晶硅膜。 成膜后，迫使空气沿加热部的内表面流动，强制冷却反应管的内部。 在使用具有硅衬底和形成在硅衬底的表面上的金属膜的晶片形成金属硅膜的情况下，将反应管内的温度设定为例如 100℃，用于装载晶片。 这抑制了天然氧化膜的生长，并提高了半导体器件的特性。 相同的原理可能适用于氧化膜形成和杂质分散。

公开(公告)号：US20100112796A1

公开(公告)日：2010-05-06

申请号：US12441741

申请日：2008-06-06

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/28 ,  H01L21/3213

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.

摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。

公开(公告)号：US20100112496A1

公开(公告)日：2010-05-06

申请号：US12441007

申请日：2008-06-06

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： G03F7/20

CPC分类号： H01L21/3086 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3088 ,  H01L21/31608

摘要： A patterning method comprises a step for forming a first film on a substrate, a step for forming a multilayer film including a resist film on the first film, a step for patterning the resist film by photolithography to form a patterned resist film having a predetermined pattern, a step for forming an silicon oxide film different from the first film on the patterned resist film and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for etching the silicon oxide film to form a sidewall spacer on the sidewall of the patterned resist film, a step for removing the patterned resist film, and a step for processing the first film by using the sidewall spacer as a mask.

摘要翻译： 图案化方法包括在基板上形成第一膜的步骤，用于在第一膜上形成包括抗蚀剂膜的多层膜的步骤，通过光刻图案化抗蚀剂膜以形成具有预定图案的图案化抗蚀剂膜的步骤 通过将含有有机硅和含有活性氧的第二气体的第一气体交替地供给到基板上，在图案化的抗蚀剂膜和第一膜上形成与第一膜不同的氧化硅膜的步骤，蚀刻步骤 氧化硅膜在图案化的抗蚀剂膜的侧壁上形成侧壁间隔物，去除图案化的抗蚀剂膜的步骤，以及通过使用侧壁间隔物作为掩模来处理第一膜的步骤。

公开(公告)号：US20110237082A1

公开(公告)日：2011-09-29

申请号：US13154728

申请日：2011-06-07

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/311

CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.

摘要翻译： 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

公开(公告)号：US07754622B2

公开(公告)日：2010-07-13

申请号：US12441741

申请日：2008-06-06

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Yasushi Akasaka ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.

摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。

公开(公告)号：US08168375B2

公开(公告)日：2012-05-01

申请号：US12441007

申请日：2008-06-06

申请人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

发明人： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/40

CPC分类号： H01L21/3086 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3088 ,  H01L21/31608

摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; forming a silicon oxide film different from the first film on the patterned resist film and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; etching the silicon oxide film to thereby form a sidewall spacer on a sidewall of the patterned resist film; removing the patterned resist film; and processing the first film by using the sidewall spacer as a mask.

摘要翻译： 公开了一种图案化方法，包括：在基板上形成第一膜; 在所述第一膜上形成包括抗蚀剂膜的多层膜; 通过光刻对图案化抗蚀剂膜形成具有预设图案的图案化抗蚀剂膜; 在所述图案化的抗蚀剂膜和所述第一膜上形成与所述第一膜不同的氧化硅膜，通过交替地向所述基板供给含有有机硅的第一气体和含有活性氧的第二气体; 蚀刻氧化硅膜，从而在图案化抗蚀剂膜的侧壁上形成侧壁间隔物; 去除图案化的抗蚀剂膜; 以及通过使用侧壁间隔件作为掩模来处理第一膜。