公开(公告)号：US5647945A

公开(公告)日：1997-07-15

申请号：US255924

申请日：1994-06-07

申请人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

发明人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

IPC分类号： C23C8/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/3065

CPC分类号： C23C16/4557 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572 ,  C23C8/06 ,  H01L21/67017 ,  H01L21/67103 ,  Y10S156/916 ,  Y10S438/905 ,  Y10S438/935

摘要： A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

摘要翻译： 真空处理装置包括：用于处理目标物体的真空处理室; 处理气体供给源，用于向真空处理室中的目标物体供给进行处理的处理气体; 处理气体供给管，用于将来自处理气体供给源的处理气体供给到真空处理室中; 以及当将处理气体供给到真空处理室时，用于将气体供给管保持在比大气压力更低的压力下的减压阀。

公开(公告)号：US5711815A

公开(公告)日：1998-01-27

申请号：US669802

申请日：1996-06-27

申请人： Hideki Lee ,  Tomihiro Yonenaga

发明人： Hideki Lee ,  Tomihiro Yonenaga

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/45521

摘要： A film forming apparatus includes: a chamber for housing a semiconductor wafer having a surface on which a film is to be formed, and performing a film formation process with respect to the semiconductor wafer; a process gas supply system for supplying a process gas for forming the film onto the surface of the semiconductor wafer on which the film is to be formed; a heater for heating the semiconductor wafer to decompose a film forming gas, thereby forming the film on the wafer; a purge gas supply system for supplying a purge gas from a lower surface side of the surface of the semiconductor wafer on which the film is to be formed toward a peripheral edge portion of the semiconductor wafer; and a ring member positioned at a position to cover a peripheral edge portion of the surface on which the film is to be formed when film formation is to be performed with respect to the semiconductor wafer, the ring member having an outer edge projecting from an outer edge of the target object in the film formation. A flow path in which substantially all the purge gas flows outward from the target object is formed by the ring member.

摘要翻译： 一种成膜装置，包括：用于容纳半导体晶片的室，其具有将要形成膜的表面，并对半导体晶片进行成膜处理; 一种工艺气体供应系统，用于将膜形成工艺气体提供到要形成薄膜的半导体晶片的表面上; 用于加热半导体晶片以分解成膜气​​体的加热器，从而在晶片上形成膜; 吹扫气体供给系统，用于从半导体晶片的要形成的半导体晶片的表面的下表面侧向半导体晶片的周缘部提供净化气体; 以及环形构件，所述环构件定位在覆盖要在要形成所述膜的表面的周缘部分的位置，所述环构件将相对于所述半导体晶片进行成膜时，所述环构件具有从外部突出的外边缘 胶片形成中的目标物体的边缘。 其中基本上所有的清除气体从目标物体向外流动的流动路径由环形构件形成。

公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5951772A

公开(公告)日：1999-09-14

申请号：US803008

申请日：1997-02-21

申请人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

发明人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

IPC分类号： C23C8/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572 ,  C23C8/06 ,  H01L21/67017 ,  H01L21/67103 ,  Y10S156/916 ,  Y10S438/905 ,  Y10S438/935

摘要： A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

摘要翻译： 真空处理装置包括：用于处理目标物体的真空处理室; 处理气体供给源，用于向真空处理室中的目标物体供给进行处理的处理气体; 处理气体供给管，用于将来自处理气体供给源的处理气体供给到真空处理室中; 以及当将处理气体供给到真空处理室时，用于将气体供给管保持在比大气压力更低的压力下的减压阀。

公开(公告)号：US5616208A

公开(公告)日：1997-04-01

申请号：US255950

申请日：1994-06-07

申请人： Hideki Lee

发明人： Hideki Lee

IPC分类号： B08B7/00 ,  C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/677 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01L21/67766 ,  B08B7/00 ,  B08B7/0042 ,  C23C14/564 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719 ,  Y10S438/905

摘要： A vacuum processing apparatus includes a plurality of vacuum processing chambers for processing a target object using a process gas, a vacuum convey chamber, connected to the plurality of vacuum processing chambers, for loading/unloading the target object into/from the processing chambers, an opening/closing means opened/closed to cause the plurality of vacuum processing chambers to communicate with the vacuum convey chamber, and a cleaning gas supply means for supplying a cleaning gas containing ClF.sub.3 into at least one of the vacuum convey chamber and the plurality of vacuum processing chambers. The cleaning gas is supplied-into the plurality of vacuum processing chambers and the vacuum convey chamber communicating with each other by opening the opening/closing means to clean the plurality of vacuum processing chambers and the vacuum convey chamber.

摘要翻译： 真空处理装置包括多个真空处理室，用于使用处理气体处理目标物体，连接到多个真空处理室的真空输送室，用于将目标物体装载/卸载到处理室中; 打开/关闭装置打开/关闭以使多个真空处理室与真空输送室连通;以及清洁气体供给装置，用于将含有ClF 3的清洁气体供应到至少一个真空输送室和多个真空中 处理室。 通过打开打开/关闭装置来清洁多个真空处理室和真空输送室，将清洁气体供给到多个真空处理室和真空输送室中，以使真空输送室相互连通。

公开(公告)号：US5180692A

公开(公告)日：1993-01-19

申请号：US781669

申请日：1991-10-24

申请人： Shigehito Ibuka ,  Hideki Lee

发明人： Shigehito Ibuka ,  Hideki Lee

IPC分类号： C23C16/40 ,  H01L21/205

CPC分类号： C23C16/401 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/118 ,  Y10S438/925

摘要： This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.

摘要翻译： 本发明涉及通过使用至少包含三氟化硼的反应气体的CVD或外延技术在半导体晶片的表面上形成高品质的含硼膜的方法。

公开(公告)号：US5785796A

公开(公告)日：1998-07-28

申请号：US773094

申请日：1996-12-24

申请人： Hideki Lee

发明人： Hideki Lee

IPC分类号： B08B7/00 ,  C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/677 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01L21/67766 ,  B08B7/00 ,  B08B7/0042 ,  C23C14/564 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719 ,  Y10S438/905

摘要： A vacuum processing apparatus includes a plurality of vacuum processing chambers for processing a target object using a process gas, a vacuum convey chamber, connected to the plurality of vacuum processing chambers, for loading/unloading the target object into/from the processing chambers, an opening/closing means opened/closed to cause the plurality of vacuum processing chambers to communicate with the vacuum convey chamber, and a cleaning gas supply means for supplying a cleaning gas containing ClF.sub.3 into at least one of the vacuum convey chamber and the plurality of vacuum processing chambers. The cleaning gas is supplied into the plurality of vacuum processing chambers and the vacuum convey chamber communicating with each other by opening the opening/closing means to clean the plurality of vacuum processing chambers and the vacuum convey chamber.

摘要翻译： 真空处理装置包括多个真空处理室，用于使用处理气体处理目标物体，连接到多个真空处理室的真空输送室，用于将目标物体装载/卸载到处理室中; 打开/关闭装置打开/关闭以使多个真空处理室与真空输送室连通;以及清洁气体供给装置，用于将含有ClF 3的清洁气体供应到至少一个真空输送室和多个真空中 处理室。 通过打开打开/关闭装置将清洁气体供应到多个真空处理室和真空输送室中，从而清洁多个真空处理室和真空输送室。

公开(公告)号：US5525160A

公开(公告)日：1996-06-11

申请号：US237369

申请日：1994-05-03

申请人： Sumi Tanaka ,  Yuichiro Fujikawa ,  Tomihiro Yonenaga ,  Hideki Lee

发明人： Sumi Tanaka ,  Yuichiro Fujikawa ,  Tomihiro Yonenaga ,  Hideki Lee

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45568 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54

摘要： A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other. Thus generation of particles can be precluded in the processing gas feed unit, and smooth supply of processing gases, improved yields and throughputs, and easy maintenance operation can be attained.

摘要翻译： 一种处理室，其具有用于将其内部加热至所需温度的加热装置，以及具有至少三个分离的保持元件的保持装置。 处理气体供给口和加工用气体通路设置在与处理室连接并关闭处理室的上表面的开口的盖中，处理气体供给口和处理气体通路通过连接 管。 处理室与处理气体源连接，并且在其侧壁上形成有与处理气体通道连通的处理气体导入通道。 密封构件设置在相互相对的处理室和盖的表面中的处理气体通道或处理气体引入通道中的任一个的开口端周围。 因此，可以在处理气体供给单元中排除颗粒的产生，可以获得平滑的加工气体的供给，提高的产量和生产量以及容易的维护操作。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。