公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5015330A

公开(公告)日：1991-05-14

申请号：US486416

申请日：1990-02-28

申请人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

发明人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

IPC分类号： C23C16/02 ,  C23C16/452 ,  C23C16/54 ,  H01J37/32 ,  B44C1/22 ,  B05D3/06 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C23C16/0245 ,  C23C16/452 ,  C23C16/54 ,  Y10S156/917 ,  Y10S438/905 ,  Y10S438/913

摘要： A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

摘要翻译： 一种成膜方法包括以下步骤：将待处理的多个物体放置在反应容器中，并在加热条件下通过等离子体蚀刻除去放置在反应容器中的待处理物体上的天然氧化起始膜 在停止供给蚀刻气体之后排出蚀刻气体，以停止等离子体的制造，并且在反应容器内供给成膜气体而不使反应容器对空气开放，从而在物体上形成膜。

公开(公告)号：US5702529A

公开(公告)日：1997-12-30

申请号：US467127

申请日：1995-06-06

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US5370371A

公开(公告)日：1994-12-06

申请号：US75119

申请日：1993-06-10

申请人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

发明人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/22 ,  H01L21/324 ,  C21D1/06

CPC分类号： H01L21/67103 ,  C23C16/4583 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12

摘要： A heat treatment apparatus having a heat treatment boat with a plurality of wafers held thereon, which is to be loaded in a reaction vessel which has one end opened. Once loaded, the boat effects a seal of the reaction vessel, in preparation for subjecting the wafers to heat treatment. The boat also has a heat-insulator disposed on its lower end for heat-insulating the interior of the reaction vessel during the heat-treatment. The heat-insulator includes composite plates having a metal film layer on an upper surface for reflecting heat rays generated during the heat treatment of the reaction vessel, and a cylinder enclosing the composite plates. Thus, sufficient heat-insulating effect for the heat treatment can be obtained, and stable heat-treatment can be conducted with the sufficient heat-insulating effect secured. Furthermore, the generation of particles can be suppressed, and yields of the heat treatment can be improved.

摘要翻译： 一种热处理装置，具有保存在其上的多个晶片的热处理舟，其将被装载在一端开放的反应容器中。 一旦加载，船就会对反应容器进行密封，以准备对晶片进行热处理。 该船还具有设置在其下端的绝热体，用于在热处理期间对反应容器的内部进行绝热。 绝热体包括在上表面具有用于反映在反应容器的热处理期间产生的热射线的金属膜层的复合板和封闭复合板的圆筒。 因此，可以获得用于热处理的充分的绝热效果，并且可以在确保足够的绝热效果的情况下进行稳定的热处理。 此外，可以抑制颗粒的产生，并且可以提高热处理的产率。

公开(公告)号：US5250463A

公开(公告)日：1993-10-05

申请号：US719362

申请日：1991-06-24

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US5746581A

公开(公告)日：1998-05-05

申请号：US468325

申请日：1995-06-06

申请人： Katsuya Okumura ,  Yuuichi Mikata ,  Manabu Tsujimura ,  Yoshio Ando

发明人： Katsuya Okumura ,  Yuuichi Mikata ,  Manabu Tsujimura ,  Yoshio Ando

IPC分类号： F04C25/02 ,  F04C28/00 ,  F04D19/04 ,  F04D27/00 ,  F04B41/06 ,  F04B49/00

CPC分类号： F04C28/00 ,  F04D19/046 ,  F04D27/0261

摘要： A method and apparatus for evacuating a vacuum system which includes an evacuating portion comprising first and second vacuum pumps which are connected in series. The method and the apparatus are characterized in that the first vacuum pump is operated in a range from reverse rotation to forward rotation, and the second vacuum pump is rotated unidirectionally, thereby enabling pressure control of the vacuum system over a wide range.

摘要翻译： 一种用于抽真空系统的方法和装置，该真空系统包括一个包括串联连接的第一和第二真空泵的排气部分。 该方法和装置的特征在于，第一真空泵在从反向旋转到正向旋转的范围内操作，并且第二真空泵单向旋转，从而使得能够在宽范围内对真空系统进行压力控制。

公开(公告)号：US09034467B2

公开(公告)日：2015-05-19

申请号：US13192694

申请日：2011-07-28

申请人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

发明人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

IPC分类号： B32B7/12 ,  B08B7/00 ,  G03F7/20

CPC分类号： B08B7/0028 ,  B05D3/0254 ,  B05D5/00 ,  G03F7/707 ,  G03F7/70925 ,  Y10T428/28 ,  Y10T428/2848

摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

摘要翻译： 根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂 基质。

公开(公告)号：US20130313429A1

公开(公告)日：2013-11-28

申请号：US13954425

申请日：2013-07-30

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

IPC分类号： H01J37/26

CPC分类号： H01J37/265 ,  G01R31/307 ,  H01J37/04 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2594 ,  H01J2237/2817

摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

公开(公告)号：US08324726B2

公开(公告)日：2012-12-04

申请号：US11351338

申请日：2006-02-10

申请人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

发明人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

IPC分类号： H01L23/34

CPC分类号： H01L23/49811 ,  H01L23/49827 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K1/115 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

摘要翻译： 一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。 在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。 通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。 此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。 这样可以抑制裂纹的出现。 结果，可以提高功率模块的耐热循环电阻和功率循环电阻。