公开(公告)号：US5015330A

公开(公告)日：1991-05-14

申请号：US486416

申请日：1990-02-28

申请人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

发明人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

IPC分类号： C23C16/02 ,  C23C16/452 ,  C23C16/54 ,  H01J37/32 ,  B44C1/22 ,  B05D3/06 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C23C16/0245 ,  C23C16/452 ,  C23C16/54 ,  Y10S156/917 ,  Y10S438/905 ,  Y10S438/913

摘要： A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

摘要翻译： 一种成膜方法包括以下步骤：将待处理的多个物体放置在反应容器中，并在加热条件下通过等离子体蚀刻除去放置在反应容器中的待处理物体上的天然氧化起始膜 在停止供给蚀刻气体之后排出蚀刻气体，以停止等离子体的制造，并且在反应容器内供给成膜气体而不使反应容器对空气开放，从而在物体上形成膜。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5252133A

公开(公告)日：1993-10-12

申请号：US809122

申请日：1991-12-18

申请人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

发明人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  H01L21/22 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C30B25/14

摘要： A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree.

公开(公告)号：US5048800A

公开(公告)日：1991-09-17

申请号：US563345

申请日：1990-08-07

申请人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

发明人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

IPC分类号： C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D1/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/0025 ,  F27D1/0033

摘要： A vertical heat treatment apparatus includes a reaction furnace constituted by a reaction chamber having an inner tube and an outer tube and a heater arranged outside the reaction chamber, a manifold communicating with a lower portion of the reaction chamber to support the reaction chamber and a gas being supplied and exhausted through the mainfold, a hollow vessel, arranged together with the boat in the reaction furnace, for supporting a lower end of a boat having objects, and a plurality of first heat-insulating members detachably arranged in the hollow vessel, wherein the number of the first insulating members is adjusted to adjust a heat-insulating effect. The first heat-insulating member includes a fin unit constituted by fins horizontally arranged at predetermined intervals and spacers for keeping the intervals between the fins.

摘要翻译： 立式热处理装置包括由反应室构成的反应炉，该反应室具有内管和外管以及布置在反应室外部的加热器，与反应室的下部连通以支撑反应室的歧管和气体 通过主折叠供应和排出的中空容器，与反应炉中的船一起布置的用于支撑具有物体的船的下端的中空容器，以及可拆卸地布置在中空容器中的多个第一绝热构件，其中 调整第一绝缘构件的数量以调节绝热效果。 第一绝热构件包括由以预定间隔水平布置的翅片构成的翅片单元和用于保持翅片之间的间隔的间隔件。

公开(公告)号：US4283439A

公开(公告)日：1981-08-11

申请号：US144836

申请日：1980-04-29

申请人： Iwao Higashinakagawa ,  Syohei Sima ,  Takahiko Moriya

发明人： Iwao Higashinakagawa ,  Syohei Sima ,  Takahiko Moriya

IPC分类号： H01L23/522 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L24/02 ,  H01L21/28518 ,  H01L23/53257 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/1305 ,  Y10S148/015 ,  Y10S148/018 ,  Y10S148/02 ,  Y10S148/147

摘要： A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在已经形成的必要元件的半导体衬底上形成的绝缘膜上形成由难熔金属或金属硅化物构成的互连电极，在互连电极上形成氮化硅膜 ，并且在氮化硅膜上形成氧化硅膜，从而防止元件劣化。

公开(公告)号：US4650698A

公开(公告)日：1987-03-17

申请号：US780242

申请日：1985-09-26

申请人： Takahiko Moriya ,  Saburo Nakada

发明人： Takahiko Moriya ,  Saburo Nakada

IPC分类号： C03C17/36 ,  C23C16/02 ,  C23C16/44 ,  H01L21/285 ,  B05D7/22 ,  C23C16/06

CPC分类号： C03C17/3607 ,  C03C17/36 ,  C03C17/3636 ,  C03C17/3649 ,  C23C16/0272 ,  C23C16/4404 ,  H01L21/285

摘要： A method of forming with good reproducibility a high-quality thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube which has the steps of, prior to the formation of the thin film forming an intermediate film of a material having good adhesion with both quartz, and the metal or metal compound on the inner wall of the reaction tube, and forming a film of the metal or metal compound for the thin film on the intermediate film.

摘要翻译： 在置于石英反应管中的基板上通过气相生长法在金属或金属化合物上形成高质量的金属或金属化合物的薄膜的方法，该方法具有以下步骤：在形成中间体的薄膜之前， 与石英两者具有良好粘附性的材料的膜，以及在反应管的内壁上的金属或金属化合物，并且在中间膜上形成用于薄膜的金属或金属化合物的膜。

公开(公告)号：US4377438A

公开(公告)日：1983-03-22

申请号：US304677

申请日：1981-09-22

申请人： Takahiko Moriya ,  Yoshikazu Hazuki ,  Masahiro Kashiwagi

发明人： Takahiko Moriya ,  Yoshikazu Hazuki ,  Masahiro Kashiwagi

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/76819 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for producing a semiconductor device has the steps of forming an insulating film on an uneven surface of a semiconductor body; and dry etching the insulating film by using as an etchant a gas containing carbon-halogen bonds and hydrogen, whereby the surface of said insulating film is smoothed.

摘要翻译： 半导体器件的制造方法具有在半导体本体的凹凸面上形成绝缘膜的工序; 并且通过使用含有碳 - 卤键和氢的气体作为蚀刻剂来干蚀​​刻所述绝缘膜，由此使所述绝缘膜的表面平滑。

公开(公告)号：US4957880A

公开(公告)日：1990-09-18

申请号：US346359

申请日：1989-04-28

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/268 ,  H01L21/32051 ,  H01L21/76879 ,  Y10S148/071 ,  Y10S148/09

摘要： In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

摘要翻译： 在半导体器件的制造方法中，在绝缘层上形成有连接层，在反应气体的气氛中，通过在具有波长的光中选择性地形成连接层的区域， 在200〜1000nm的范围内，并且在光照射区域中通过CVD法选择性地沉积连接层形成衬底，直到获得所需物质厚度。

公开(公告)号：US4699801A

公开(公告)日：1987-10-13

申请号：US832875

申请日：1986-02-26

申请人： Hitoshi Ito ,  Takahiko Moriya

发明人： Hitoshi Ito ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/76879 ,  H01L21/2686 ,  H01L21/28562 ,  H01L21/32051

摘要： A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

摘要翻译： 以这样的方式制造半导体器件，即将具有400至1000nm范围内的波长的光照射在基板上，以将材料气体的接合手激发到振动状态，并且在 基板，按照化学气相沉积法。