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公开(公告)号：US20120164840A1
公开(公告)日：2012-06-28
申请号：US13332652
申请日：2011-12-21
IPC分类号： H01L21/306 , B08B3/00 , B08B7/04
CPC分类号： H01L21/67028 , H01L21/67051
摘要： A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.
摘要翻译： 基板处理方法包括将处理液供给到基板上以处理基板的液体处理工序; 对形成有处理液的液膜的基板进行加热的加热工序; 向形成处理液的液膜的基板供给挥发性处理液的供给工序; 停止向基板供应挥发性处理液的停止处理; 以及通过除去挥发性处理液体而干燥基板的干燥工序，其中加热过程在供应挥发性处理液和基板的供应过程开始之前开始，使得基板的表面温度高于露点 在基板的表面从挥发性处理液体露出之前。
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公开(公告)号：US08308870B2
公开(公告)日：2012-11-13
申请号：US12610599
申请日：2009-11-02
IPC分类号： B08B3/08
CPC分类号： H01L21/67051
摘要： Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.
摘要翻译： 公开了一种清洁装置和清洁方法，其可以在基板经受清洁处理之后收集化学液体而不降低生产量，并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理，漂洗处理和IPA干燥处理，并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯，在清洗液未供给到晶片的状态下。 此外，该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后，控制单元在进行清洁处理，然后进行晶片W的漂洗处理之后，控制向排水杯供给的清洗液。
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公开(公告)号：US20100108103A1
公开(公告)日：2010-05-06
申请号：US12610599
申请日：2009-11-02
IPC分类号： B08B3/00
CPC分类号： H01L21/67051
摘要： Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.
摘要翻译： 公开了一种清洁装置和清洁方法，其可以在基板经受清洁处理之后收集化学液体而不降低生产量，并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理，漂洗处理和IPA干燥处理，并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯，在清洗液未供给到晶片的状态下。 此外，该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后，控制单元在进行清洁处理，然后进行晶片W的漂洗处理之后，控制向排水杯供给的清洗液。
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公开(公告)号：US20100108096A1
公开(公告)日：2010-05-06
申请号：US12320536
申请日：2009-01-28
申请人： Teruomi Minami , Takashi Yabuta , Kazuki Kosai
发明人： Teruomi Minami , Takashi Yabuta , Kazuki Kosai
CPC分类号： H01L21/6708 , H01L21/02057
摘要： A liquid processing method performs a liquid process after an etching target film formed on a surface of a substrate is etched through a hard mask layer used as an etching mask and having a predetermined pattern formed therein. The liquid process is used for removing the hard mask layer and a polymer deposited due to etching. The method includes a second step of switching from a discard side to a collection side for collecting a chemical liquid used in the liquid process and recycling the chemical liquid in the liquid process, when the hard mask layer is removed by a first step to a residual quantity at which the chemical liquid used in the liquid process becomes collectable for reuse.
摘要翻译： 在通过用作蚀刻掩模并形成有预定图案的硬掩模层蚀刻形成在基板表面上的蚀刻目标膜之后，液体处理方法进行液体处理。 液体方法用于去除硬掩模层和由于蚀刻沉积的聚合物。 该方法包括第二步骤，当将硬掩模层通过第一步骤移除到残余物时，从丢弃侧切换到收集侧，用于收集液体处理中使用的化学液体并循环液体过程中的化学液体 在液体处理中使用的化学液体可以收集用于再利用的量。
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公开(公告)号：US6029371A
公开(公告)日：2000-02-29
申请号：US156751
申请日：1998-09-16
CPC分类号： H01L21/67034
摘要： A drying treatment apparatus for drying cleaned semiconductor wafers comprises drying gas producing means (41) connected to a drying treating unit (30) through a drying gas supplying pipe line (32). A flowrate controlling diaphragm pump (50) is provided in an isopropyl alcohol (IPA) supplying pipe line (32) that connects an IPA tank (48) and the drying gas producing means (41). An N.sub.2 gas supply source (52) is provided for supplying nitrogen gas into the drying gas producing means (41), and a heater (44) is disposed within the drying gas producing means to produce a drying gas. As a result of this, the amount of the IPA supplied to the drying gas producing means (41) by the diaphragm pump (50) is controllable, thus enabling the concentration of the IPA contained in the drying gas to be maintained at a value within a range of from 3% to 80%, inclusive, and enabling the temperature of the drying gas to be maintained at a value within a range of from 80.degree. to 150.degree., inclusive, due to the heating by the heater (44). The above feature enables improvement of the drying efficiency and reduction in the amount of consumption of the drying gas.
摘要翻译： 用于干燥清洁的半导体晶片的干燥处理装置包括通过干燥气体供给管线（32）连接到干燥处理单元（30）的干燥气体生成装置（41）。 在连接IPA罐（48）和干燥气体产生装置（41）的异丙醇（IPA）供应管线（32）中设置有流量控制隔膜泵（50）。 提供一种用于向干燥气体产生装置（41）中供应氮气的N 2气体供应源（52），并且在干燥气体产生装置内设置加热器（44）以产生干燥气体。 作为其结果，通过隔膜泵（50）供给到干燥气体生成装置（41）的IPA的量是可控的，从而能够使包含在干燥气体中的IPA的浓度保持在 3％〜80％的范围，由于加热器（44）的加热，使干燥气体的温度保持在80〜150℃的范围内。 上述特征使得能够提高干燥效率并减少干燥气体的消耗量。
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公开(公告)号：US5671544A
公开(公告)日：1997-09-30
申请号：US697132
申请日：1996-08-20
申请人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
发明人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
IPC分类号： H01L21/304 , F26B21/14 , H01L21/00 , F26B21/06
CPC分类号： H01L21/67034 , F26B21/145
摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.
摘要翻译： 基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器 用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置 用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。
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公开(公告)号：US5575079A
公开(公告)日：1996-11-19
申请号：US330793
申请日：1994-10-28
申请人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
发明人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
IPC分类号： H01L21/304 , F26B21/14 , H01L21/00 , F26B21/06
CPC分类号： H01L21/67034 , F26B21/145
摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.
摘要翻译： 基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器 用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置 用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。
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公开(公告)号：US08978671B2
公开(公告)日：2015-03-17
申请号：US13332652
申请日：2011-12-21
CPC分类号： H01L21/67028 , H01L21/67051
摘要： An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.
摘要翻译： 一种设备，包括：处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器，用于控制所述挥发性处理液体供应单元和所述基板加热单元，其中所述控制器执行将处理液体供应到所述基板的处理，对其上形成有所述处理液体的液体膜的基板进行加热的处理， 提供挥发性处理液的处理，停止供给挥发性处理液的处理，以及通过除去挥发性处理液来干燥基板的工序，并且，在供给工序之前开始加热基板 并且所述基板加热单元加热所述基板，使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。
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19.发明申请SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS 有权基板处理方法，用于执行基板处理方法的存储介质存储计算机程序和基板处理装置公开(公告)号：US20110308549A1
公开(公告)日：2011-12-22
申请号：US13161714
申请日：2011-06-16
CPC分类号： H01L21/67028 , H01L21/02052 , H01L21/67051
摘要： In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.
摘要翻译： 在本发明的基板处理方法中，首先使用化学液处理基板。 接下来，在旋转基板的同时通过供给冲洗液来冲洗基板。 此后，在旋转基板的同时干燥基板。 基板的干燥包括在冲洗衬底期间将衬底的旋转速度降低到低于衬底的旋转速度，同时将冲洗液体供应到衬底的中心部分; 在基板的旋转速度降低到第一旋转速度之后，从基板的中心部朝向其周边部分移动供给冲洗液体的冲洗液体供给位置; 并且在冲洗液体供应位置已经移动之后将干燥液体供应到基底。
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20.发明申请公开(公告)号：US20100319734A1
公开(公告)日：2010-12-23
申请号：US12634942
申请日：2009-12-10
申请人： Teruomi MINAMI , Fumihiro Kamimura , Kazuki Kosai , Takashi Yabuta , Kenji Yokomizo , Shogo Mizota
发明人： Teruomi MINAMI , Fumihiro Kamimura , Kazuki Kosai , Takashi Yabuta , Kenji Yokomizo , Shogo Mizota
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , H01L21/6708
摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.
摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。
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