公开(公告)号：US20090004863A1

公开(公告)日：2009-01-01

申请号：US12146031

申请日：2008-06-25

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/3212

Abstract: The present invention provides a polishing liquid for polishing a ruthenium-containing barrier layer, the polishing liquid being used in chemical mechanical polishing for a semi-conductor device having a ruthenium-containing barrier layer and conductive metal wiring lines on a surface thereof, the polishing liquid comprising an oxidizing agent; and a polishing particulate having hardness of 5 or higher on the Mohs scale and having a composition in which a main component is other than silicon dioxide (SiO2). The present invention also provides a polishing method for chemical mechanical polishing of a semi-conductor device, the method contacting the polishing liquid with the surface of a substrate to be polished, and polishing the surface to be polished such that contacting pressure from a polishing pad to the surface to be polished is from 0.69 kPa to 20.68 kPa.

Abstract translation: 本发明提供了一种用于抛光含钌阻挡层的抛光液，该抛光液用于具有含钌阻挡层和导电金属布线在其表面上的半导体器件的化学机械抛光，抛光 包含氧化剂的液体; 以及Mohs规格的硬度为5以上的抛光粒子，其主成分为二氧化硅（SiO 2）以外的成分。 本发明还提供了一种用于半导体器件的化学机械抛光的抛光方法，该方法使抛光液体与待抛光的基底的表面接触，并抛光待抛光的表面，使得来自抛光垫的接触压力 至待抛光表面为0.69kPa至20.68kPa。

公开(公告)号：US08715524B2

公开(公告)日：2014-05-06

申请号：US12036686

申请日：2008-02-25

Applicant: Tetsuya Kamimura ,  Toshiyuki Saie ,  Masaru Yoshikawa

Inventor： Tetsuya Kamimura ,  Toshiyuki Saie ,  Masaru Yoshikawa

IPC: C09K13/00 ,  H01L21/302

CPC classification number: C23F3/00 ,  C09G1/02 ,  H01L21/3212

Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.

Abstract translation: 本发明提供了一种用于抛光半导体集成电路的阻挡层的抛光液，该抛光液包括：二季铵阳离子; 腐蚀抑制剂; 和胶体二氧化硅，其中抛光液的pH在2.5至5.0的范围内。 根据本发明，可以提供能够实现优异的阻挡层研磨速度的抛光液，以及抑制由于固体磨粒的凝聚而引起的刮擦的发生。

公开(公告)号：US08551928B2

公开(公告)日：2013-10-08

申请号：US13281885

申请日：2011-10-26

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C11D3/10 ,  C11D3/00

CPC classification number: C11D3/0052 ,  C11D3/0094 ,  C11D3/042 ,  C11D3/046 ,  C11D3/048 ,  C11D3/10 ,  C11D3/2075 ,  C11D3/2096 ,  C11D3/3942 ,  C11D7/08 ,  C11D7/10 ,  C11D7/105 ,  C11D7/12 ,  C11D7/265 ,  C11D7/267 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31133

Abstract: A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent.

Abstract translation: 一种用于应用于包含具有碳酸亚烷基酯和碳酸盐的发泡剂的半导体衬底的多剂型清洁套件，具有酸性化合物的发泡助剂和氧化剂; 与氧化剂组合时，至少将发泡剂与发泡助剂混合，用于清洁半导体衬底。

公开(公告)号：US08419970B2

公开(公告)日：2013-04-16

申请号：US12458220

申请日：2009-07-06

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053

Abstract: A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Abstract translation: 一种用于在用于制造半导体集成电路的平坦化工艺中对要抛光的物体进行化学机械抛光的氮化硅抛光液体，所述待抛光体包括至少包含氮化硅的第一层和包含至少一个硅的第二层 - 包括选自多晶硅，改性多晶硅，氧化硅，碳化硅和碳氧化硅的材料，氮化硅抛光液的pH为2.5至5.0，并且包括（a）胶态二氧化硅，（b）有机 酸在其分子结构中具有至少一个磺酸基或膦酸基，并且用作氮化硅的抛光促进剂，和（c）水。

公开(公告)号：US08372304B2

公开(公告)日：2013-02-12

申请号：US12457373

申请日：2009-06-09

Applicant: Tooru Yamada ,  Tetsuya Kamimura

Inventor： Tooru Yamada ,  Tetsuya Kamimura

IPC: C09K13/00 ,  H01L21/44

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

公开(公告)号：US08338303B2

公开(公告)日：2012-12-25

申请号：US12639015

申请日：2009-12-16

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.

Abstract translation: 用于半导体器件的化学机械抛光的抛光液包括（a）具有一个或多个羧基的羧酸化合物，（b）当用于抛光时具有-10mV至-35mV的ζ电位的胶体二氧化硅颗粒 液体，（c）苯并三唑衍生物，（d）阴离子表面活性剂和（e）氧化剂，所述研磨液的pH为5.0〜8.0。

公开(公告)号：US20100009538A1

公开(公告)日：2010-01-14

申请号：US12458220

申请日：2009-07-06

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053

Abstract: A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Abstract translation: 一种用于在用于制造半导体集成电路的平坦化工艺中对要抛光的物体进行化学机械抛光的氮化硅抛光液体，所述待抛光体包括至少包含氮化硅的第一层和包含至少一个硅的第二层 - 包括选自多晶硅，改性多晶硅，氧化硅，碳化硅和碳氧化硅的材料，氮化硅抛光液的pH为2.5至5.0，并且包括（a）胶态二氧化硅，（b）有机 酸在其分子结构中具有至少一个磺酸基或膦酸基，并且用作氮化硅的抛光促进剂，和（c）水。

公开(公告)号：US20090311864A1

公开(公告)日：2009-12-17

申请号：US12457373

申请日：2009-06-09

Applicant: Tooru Yamada ,  Tetsuya Kamimura

Inventor： Tooru Yamada ,  Tetsuya Kamimura

IPC: H01L21/463 ,  H01L21/465 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

Abstract translation: 在半导体集成电路中用于阻挡层和层间绝缘膜的化学机械抛光中的研磨浆料包括研磨剂，氧化剂，防腐蚀剂，酸，表面活性剂和包合物。 抛光浆料的pH值小于5.所得的抛光浆料含有用于抛光由金属阻隔材料制成的阻挡层的阻挡层CMP的固体磨料，具有优异的储存稳定性，在各种膜中达到良好的抛光速率 抛光如阻挡层，并且能够独立地控制相对于待研磨的各种膜的抛光速率，同时进一步抑制磨料颗粒的团聚。

公开(公告)号：US20090298290A1

公开(公告)日：2009-12-03

申请号：US12453970

申请日：2009-05-28

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055

Abstract: A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.

Abstract translation: 一种抛光液，其用于在半导体集成电路的制造的平坦化工艺中对被研磨体进行化学机械抛光，所述抛光体至少包括含有多晶硅或改性多晶硅的第一层，以及含有 选自氧化硅，氮化硅，碳化硅，碳氮化硅，碳氧化硅和氮氧化硅中的至少一种，所述抛光液的pH为1.5〜7.0，包括（1）胶体二氧化硅颗粒，（2） 有机酸和（3）阴离子表面活性剂，并且能够相对于第一层选择性地抛光第二层。

公开(公告)号：US20070203436A1

公开(公告)日：2007-08-30

申请号：US11655408

申请日：2007-01-19

Applicant: Tetsuya Kamimura ,  Fujie Hayakawa ,  Kazuyuki Takeda

Inventor： Tetsuya Kamimura ,  Fujie Hayakawa ,  Kazuyuki Takeda

IPC: A61H7/00

CPC classification number: A61H7/005 ,  A61H2201/1215 ,  A61H2201/1463 ,  A61H2201/149 ,  A61H2205/021

Abstract: Disclosed are devices capable of performing a massage and wash on a scalp or massage on an affected area gently and effectively by a brush section or a treating section thereof. A plurality of projections are integrally formed on a surface of a flexible body plate of brush section, so that the projections are symmetrical with respect to an axis line A and an axis line D of the projection is perpendicular with the surface of the body plate. An edge of the body plate is fixed on a frame. A motor serving as a drive section is activated allowing a reciprocating drive means to repeatedly deform the body plate coupled thereto between an upwardly-deflected curved concave position and a downwardly-deflected curved convex position along the axis line A, thereby allowing each distance among a plurality of the projections to open and close-repeatedly to provide an repetitive action of kneading and pushing/stretching the scalp. Accordingly, the scalp massage and the scalp and hair wash are achieved.

Abstract translation: 公开了能够通过毛刷部分或其治疗部分轻轻地和有效地对头皮进行按摩和洗涤或按摩受影响的部位的装置。 多个凸起一体地形成在刷部的柔性主体板的表面上，使得突起相对于轴线A对称，并且突起的轴线D与主体板的表面垂直。 体板的边缘固定在框架上。 用作驱动部分的电动机被激活，允许往复驱动装置使沿着轴线A向上弯曲的弯曲的凹形位置和向下偏转的弯曲凸起位置之间的联接到其上的主体板反复变形，从而允许 多个突起被打开和关闭重复，以提供捏合和推压/拉伸头皮的重复动作。 因此，实现了头皮按摩和头皮洗发。