Abstract:
A reflective type or transmissive and reflective type LCD device enhances reflectivity of light in a plurality of directions. The LCD device includes a first substrate having a plurality of pixels, TFTs formed on the first substrate, an insulating layer, a reflective electrode, a second substrate opposite to the first substrate, and liquid crystal layer interposed between the first and second substrates. The reflective electrode includes a plurality of embossing members arranged repeatedly thereon to form an embossing pattern. The embossing members have inclined faces inclined asymmetrically in a plurality of directions, for example in a first, second, third and fourth directions. A viewing angle of the LCD device may be broaden in various directions regardless of an incident angle of light incident into the LCD device, and the reflectivity of the LCD device may be increased, thereby enhancing luminance of the LCD device.
Abstract:
A method and apparatus for forming a sealing member includes forming a first sealing part to surround one portion of a display area, the display area including a pixel, and forming a second sealing part to surround a remaining portion of the display area and to intersect ends defining the second sealing part with corresponding ends defining the first sealing part. Thus, a time needed to form the first and second sealing member may be reduced, thereby reducing an entire process time to manufacture the display apparatus. Further, an area needed to form the sealing member may be reduced, thereby enhancing productivity of the display apparatus.
Abstract:
A reflective type or transmissive and reflective type LCD device enhances reflectivity of light in a plurality of directions. The LCD device includes a first substrate having a plurality of pixels, TFTs formed on the first substrate, an insulating layer, a reflective electrode, a second substrate opposite to the first substrate, and liquid crystal layer interposed between the first and second substrates. The reflective electrode includes a plurality of embossing members arranged repeatedly thereon to form an embossing pattern. The embossing members have inclined faces inclined asymmetrically in a plurality of directions, for example in a first, second, third and fourth directions. A viewing angle of the LCD device may be broaden in various directions regardless of an incident angle of light incident into the LCD device, and the reflectivity of the LCD device may be increased, thereby enhancing luminance of the LCD device.
Abstract:
A laser irradiation apparatus for irradiating a laser beam to a semiconductor layer including a plurality of pixel areas, the apparatus includes a laser generator generating the laser beam, and an optical switching unit time-dividing the laser beam generated from the laser generator and transmitting a plurality of time-divided laser beams to a plurality of optical systems. The apparatus includes a first optical system of the plurality of optical systems that receives a first time-divided laser beam and irradiates a first laser slit beam along a first irradiation direction, and a second optical system of the plurality of optical systems that receives a second time-divided laser beam and irradiates a second laser slit beam along a second irradiation direction that is parallel with the first irradiation direction. The first laser slit beam and the second laser slit beam crystallize partial areas at a same location in the respective pixel areas.
Abstract:
A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.
Abstract:
A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
Abstract:
An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.
Abstract:
An organic light emitting display device in which an upper electrode and power supply lines are connected through through-holes such that charges can be smoothly supplied to the upper electrode of the organic light emitting display device, making it possible to improve light emitting efficiency.
Abstract:
An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.
Abstract:
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.