公开(公告)号：US08139618B2

公开(公告)日：2012-03-20

申请号：US12792090

申请日：2010-06-02

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01S3/00 ,  H01S5/00

CPC分类号： B82Y20/00 ,  G03B21/005 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/50

摘要： A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

公开(公告)号：US20100283063A1

公开(公告)日：2010-11-11

申请号：US12767103

申请日：2010-04-26

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： H01L31/12

CPC分类号： H01L27/14 ,  H01L27/15 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/173 ,  H01L33/08 ,  H01L33/30 ,  H01S5/0262

摘要： A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and a reflected light, and the reflected light is received by the light receiving unit.

摘要翻译： 一种光接收和发射装置，包括：发光单元和光接收单元，其设置在同一基板上，其中所述发光单元包括夹在第一覆盖层和第二覆盖层之间的有源层，第一电极电 与第一覆盖层连接的第二电极和与第二覆盖层电连接的第二电极，光接收单元包括光吸收层，至少一部分有源层在第一电极和第二包层之间的电流路径上形成增益区域 所述第二电极，所述增益区域从所述有源层的第一侧面到与所述第一侧面平行的第二侧面设置成相对于所述第一侧面的垂直方向倾斜， 在增益区域中产生的光被分割为第一侧面上的边缘面和第二侧面上的边缘面，增益区域的边缘面中的至少一个，成为光em 反射光被反射光反射，并且反射光被光接收单元接收。

公开(公告)号：US07643531B2

公开(公告)日：2010-01-05

申请号：US11610694

申请日：2006-12-14

申请人： Yasutaka Imai ,  Tsuyoshi Kaneko ,  Atsushi Sato

发明人： Yasutaka Imai ,  Tsuyoshi Kaneko ,  Atsushi Sato

IPC分类号： H01S3/097 ,  H01S5/00

CPC分类号： H01L31/153 ,  H01L31/03046 ,  H01L31/109 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18313

摘要： An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

摘要翻译： 光学半导体元件包括：发射激光的表面发射型半导体激光器; 形成在表面发射型半导体之上的光电检测元件; 形成在表面发射型半导体激光器上的第一极性的第一电极; 与形成在所述受光元件上的第一极性不同的第二极性的第二电极; 以及覆盖第一电极和第二电极的附加电极。

公开(公告)号：US20080181267A1

公开(公告)日：2008-07-31

申请号：US12020912

申请日：2008-01-28

申请人： Yasutaka IMAI ,  Masamitsu MOCHIZUKI

发明人： Yasutaka IMAI ,  Masamitsu MOCHIZUKI

IPC分类号： H01S5/026

CPC分类号： H01S5/0264 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/3432 ,  H01S2301/173 ,  H01S2301/176

摘要： An optical device, including: a surface emitting semiconductor laser; and a photodetection device for detecting part of laser light emitted from the surface emitting semiconductor laser; the photodetection device including a light absorbing layer and a first contact layer; and the first contact layer being formed with a semiconductor having an absorption edge wavelength smaller than an oscillation wavelength of the surface emitting semiconductor laser.

摘要翻译： 一种光学装置，包括：表面发射半导体激光器; 以及光检测装置，用于检测从表面发射半导体激光器发射的激光的一部分; 光检测装置包括光吸收层和第一接触层; 并且第一接触层由具有比表面发射半导体激光器的振荡波长小的吸收边缘波长的半导体形成。

公开(公告)号：US20070054437A1

公开(公告)日：2007-03-08

申请号：US11470395

申请日：2006-09-06

申请人： Tsuyoshi KANEKO ,  Yasutaka Imai

发明人： Tsuyoshi KANEKO ,  Yasutaka Imai

IPC分类号： H01L21/16

CPC分类号： H01S5/18313 ,  H01S5/0264 ,  H01S5/0425 ,  H01S2301/176 ,  H01S2301/18

摘要： An optical element includes a substrate, a surface-emitting type semiconductor laser that emits laser light in a direction vertical to a surface of the substrate, and a light-receiving element formed above or below the surface-emitting type semiconductor laser provided above the substrate. The optical element includes a first insulation layer that covers a side surface and a part of an upper surface of a first columnar section that includes at least a part of the surface-emitting type semiconductor laser, and a second insulation layer that covers a side surface and a part of an upper surface of a second columnar section that includes at least a part of the light-receiving element.

摘要翻译： 光学元件包括基板，在与基板的表面垂直的方向上发射激光的表面发射型半导体激光器和形成在基板上方的表面发射型半导体激光器的上方或下方的光接收元件 。 光学元件包括覆盖包括表面发射型半导体激光器的至少一部分的第一柱状部分的侧表面和上表面的一部分的第一绝缘层和覆盖表面发射型半导体激光器的至少一部分的第二绝缘层 以及包括光接收元件的至少一部分的第二柱状部分的上表面的一部分。

公开(公告)号：US20120140190A1

公开(公告)日：2012-06-07

申请号：US13370638

申请日：2012-02-10

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： G03B21/00 ,  H05B37/02 ,  H01L33/62

CPC分类号： B82Y20/00 ,  G03B21/005 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/50

摘要： A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

摘要翻译： 发光器件包括：夹持有源层的第一和第二覆盖层; 与所述第一包层连接的第一电极; 以及与所述第二包层连接的第二电极，所述有源层的至少一部分形成对应于所述第二电极的增益区域，所述增益区域从所述有源层的第一侧延伸到第二侧，同时倾斜于所述第一电极的垂直方向 至少第一和第二增益区域形成一组增益区域，并且提供多组，每组中的第一和第二增益区域垂直于从第一侧向第二侧延伸的方向设置，第二增益区域 第一增益区之上的电极通过第一公共电极互连，第二增益区上方的第二电极通过第二公共电极相互连接。

公开(公告)号：US20100322273A1

公开(公告)日：2010-12-23

申请号：US12792090

申请日：2010-06-02

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： H01S3/10 ,  H01S5/20 ,  H01S5/026 ,  G03B21/00

CPC分类号： B82Y20/00 ,  G03B21/005 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/50

摘要： A light emission device includes: a first clad layer; an active layer disposed above the first clad layer; a second clad layer disposed above the active layer; a first electrode electrically connected with the first clad layer; and second electrodes electrically connected with the second clad layer, wherein at least a part of the active layer forms a plurality of gain areas, the plural second electrodes are provided in correspondence with the plural gain areas, the plural gain areas extend from a first side of the active layer to a second side of the active layer opposed to the first side while inclined to a vertical line of the first side in the plan view, at least a first gain area and a second gain area included in the plural gain areas form a set of gain areas, a plurality of the sets of the gain areas are provided, the first gain area and the second gain area included in each set of the gain areas are disposed in this order in a second direction perpendicular to a first direction extending from the first side to the second side in the plan view, the second electrodes disposed above the plural first gain areas are electrically connected with one another by a first common electrode, and the second electrode disposed above the plural second gain areas are electrically connected with one another by a second common electrode.

摘要翻译： 发光器件包括：第一覆盖层; 设置在所述第一包层上方的有源层; 设置在有源层上方的第二覆盖层; 与所述第一包层电连接的第一电极; 以及与所述第二包层电连接的第二电极，其中所述有源层的至少一部分形成多个增益区域，所述多个第二电极与所述多个增益区域对应地设置，所述多个增益区域从第一侧 的有源层的第二侧与第一侧相对的第二侧相对于平面图中的第一侧的垂直线倾斜，至少包括在多个增益区中的第一增益区域和第二增益区域形成 提供一组增益区域，提供多组增益区域，每组增益区域中包括的第一增益区域和第二增益区域按照垂直于第一方向延伸的第二方向依次布置 在平面图中从第一侧到第二侧，设置在多个第一增益区之上的第二电极通过第一公共电极彼此电连接，并且第二电极 e设置在多个第二增益区域之上的电极通过第二公共电极彼此电连接。

公开(公告)号：US07482177B2

公开(公告)日：2009-01-27

申请号：US11769234

申请日：2007-06-27

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01L21/00

CPC分类号： H01S5/0264 ,  H01L31/105 ,  H01S5/0014 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18311 ,  H01S2301/176

摘要： A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflection coefficient examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer, wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of λ/4, where λ is a design wavelength of light emitted by the surface-emitting laser section.

摘要翻译： 一种制造光学器件的方法包括以下步骤：形成第一多层膜，包括在衬底上形成第一反射镜，在第一反射镜上方形成有源层，在有源层上形成第二反射镜，在半导体层上形成半导体层 第二反射镜，并在半导体层上形成牺牲层; 对所述第一多层膜进行反射检查的第一检查步骤; 通过从第一多层膜去除牺牲层来形成第二多层膜; 对所述第二多层膜进行反射系数检查的第二检查步骤; 以及图案化所述第二多层膜以形成具有所述第一反射镜，所述有源层和所述第二反射镜的表面发射激光器部分和具有所述半导体层的二极管部分，其中所述牺牲层形成为具有所述半导体层的光学膜厚度 λ/ 4的奇数倍，其中λ是由表面发射激光器部分发射的光的设计波长。

公开(公告)号：US20080013575A1

公开(公告)日：2008-01-17

申请号：US11769234

申请日：2007-06-27

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： H01S5/028 ,  B29D11/00

CPC分类号： H01S5/0264 ,  H01L31/105 ,  H01S5/0014 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18311 ,  H01S2301/176

摘要： A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflection coefficient examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer, wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of λ/4, where λ is a design wavelength of light emitted by the surface-emitting laser section.

摘要翻译： 一种制造光学器件的方法包括以下步骤：形成第一多层膜，包括在衬底上形成第一反射镜，在第一反射镜上方形成有源层，在有源层上形成第二反射镜，在半导体层上形成半导体层 第二反射镜，并在半导体层上形成牺牲层; 对所述第一多层膜进行反射检查的第一检查步骤; 通过从第一多层膜去除牺牲层来形成第二多层膜; 对所述第二多层膜进行反射系数检查的第二检查步骤; 以及图案化所述第二多层膜以形成具有所述第一反射镜，所述有源层和所述第二反射镜的表面发射激光器部分和具有所述半导体层的二极管部分，其中所述牺牲层形成为具有所述半导体层的光学膜厚度 λ/ 4的奇数倍，其中λ是由表面发射激光器部分发射的光的设计波长。

公开(公告)号：US20070138486A1

公开(公告)日：2007-06-21

申请号：US11610694

申请日：2006-12-14

申请人： Yasutaka Imai ,  Tsuyoshi Kaneko ,  Atsushi Sato

发明人： Yasutaka Imai ,  Tsuyoshi Kaneko ,  Atsushi Sato

IPC分类号： H01L31/12 ,  H01L21/00

CPC分类号： H01L31/153 ,  H01L31/03046 ,  H01L31/109 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18313

摘要： An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

摘要翻译： 光学半导体元件包括：发射激光的表面发射型半导体激光器; 形成在表面发射型半导体之上的光电检测元件; 形成在表面发射型半导体激光器上的第一极性的第一电极; 与形成在所述受光元件上的第一极性不同的第二极性的第二电极; 以及覆盖第一电极和第二电极的附加电极。