公开(公告)号：US08344393B2

公开(公告)日：2013-01-01

申请号：US12767103

申请日：2010-04-26

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01L31/153

CPC分类号： H01L27/14 ,  H01L27/15 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/173 ,  H01L33/08 ,  H01L33/30 ,  H01S5/0262

摘要： A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and a reflected light, and the reflected light is received by the light receiving unit.

摘要翻译： 一种光接收和发射装置，包括：发光单元和光接收单元，其设置在同一基板上，其中所述发光单元包括夹在第一覆盖层和第二覆盖层之间的有源层，第一电极电 与第一覆盖层连接的第二电极和与第二覆盖层电连接的第二电极，光接收单元包括光吸收层，至少一部分有源层在第一电极和第二包层之间的电流路径上形成增益区域 所述第二电极，所述增益区域从所述有源层的第一侧面到与所述第一侧面平行的第二侧面设置成相对于所述第一侧面的垂直方向倾斜， 在增益区域中产生的光被分割为第一侧面上的边缘面和第二侧面上的边缘面，增益区域的边缘面中的至少一个，成为光em 反射光被反射光反射，并且反射光被光接收单元接收。

公开(公告)号：US08304786B2

公开(公告)日：2012-11-06

申请号：US13370638

申请日：2012-02-10

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  G03B21/005 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/50

摘要： A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

摘要翻译： 发光器件包括：夹持有源层的第一和第二覆盖层; 与所述第一包层连接的第一电极; 以及与所述第二包层连接的第二电极，所述有源层的至少一部分形成对应于所述第二电极的增益区域，所述增益区域从所述有源层的第一侧延伸到第二侧，同时倾斜于所述第一电极的垂直方向 至少第一和第二增益区域形成一组增益区域，并且提供多组，每组中的第一和第二增益区域垂直于从第一侧向第二侧延伸的方向设置，第二增益区域 第一增益区之上的电极通过第一公共电极互连，第二增益区上方的第二电极通过第二公共电极相互连接。

公开(公告)号：US07704758B2

公开(公告)日：2010-04-27

申请号：US11768239

申请日：2007-06-26

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： G01R31/26

CPC分类号： H01S5/183 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18311 ,  H01S2301/176 ,  H01S2301/18

摘要： A method for manufacturing an optical device, the method includes the steps of: forming a multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a reflection coefficient examination on the multilayer film; patterning the multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer; and removing at least a portion of the sacrificial layer to expose at least a portion of an upper surface of the semiconductor layer, wherein an optical film thickness of the semiconductor layer is formed to be an odd multiple or an even multiple of λ/4, where λ is a design wavelength of light emitted by the surface-emitting laser section, andan optical film thickness of the sacrificial layer is formed not to be an odd multiple or an even multiple of λ/4.

摘要翻译： 一种光学器件的制造方法，其特征在于，包括以下工序：形成多层膜，包括在基板的上方形成第一反射镜，在所述第一反射镜的上方形成有源层，在所述有源层的上方形成第二反射镜，形成半导体 层，并且在所述半导体层上形成牺牲层; 对多层膜进行反射系数检查; 图案化多层膜以形成具有第一反射镜，有源层和第二反射镜的表面发射激光器部分和具有半导体层的二极管部分; 以及去除所述牺牲层的至少一部分以暴露所述半导体层的上表面的至少一部分，其中所述半导体层的光学膜厚度形成为λ/ 4的奇数倍或偶数倍， 其中λ是由表面发射激光器部分发射的光的设计波长，并且牺牲层的光学膜厚度形成为不是λ/ 4的奇数倍或偶数倍。

公开(公告)号：US20080013583A1

公开(公告)日：2008-01-17

申请号：US11768239

申请日：2007-06-26

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： H01S5/026 ,  H01L31/18

CPC分类号： H01S5/183 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18311 ,  H01S2301/176 ,  H01S2301/18

摘要： A method for manufacturing an optical device, the method includes the steps of: forming a multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a reflection coefficient examination on the multilayer film; patterning the multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer; and removing at least a portion of the sacrificial layer to expose at least a portion of an upper surface of the semiconductor layer, wherein an optical film thickness of the semiconductor layer is formed to be an odd multiple or an even multiple of λ/4, where λ is a design wavelength of light emitted by the surface-emitting laser section, andan optical film thickness of the sacrificial layer is formed not to be an odd multiple or an even multiple of λ/4.

摘要翻译： 一种光学器件的制造方法，其特征在于，包括以下工序：形成多层膜，包括在基板的上方形成第一反射镜，在所述第一反射镜的上方形成有源层，在所述有源层的上方形成第二反射镜，形成半导体 层，并且在所述半导体层上形成牺牲层; 对多层膜进行反射系数检查; 图案化多层膜以形成具有第一反射镜，有源层和第二反射镜的表面发射激光器部分和具有半导体层的二极管部分; 以及去除所述牺牲层的至少一部分以暴露所述半导体层的上表面的至少一部分，其中所述半导体层的光学膜厚度形成为λ/ 4的奇数倍或偶数倍， 其中λ是由表面发射激光器部分发射的光的设计波长，并且牺牲层的光学膜厚度形成为不是λ/ 4的奇数倍或偶数倍。

公开(公告)号：US20070008997A1

公开(公告)日：2007-01-11

申请号：US11426444

申请日：2006-06-26

申请人： Masamitsu MOCHIZUKI ,  Yasutaka IMAI

发明人： Masamitsu MOCHIZUKI ,  Yasutaka IMAI

IPC分类号： H01S5/00

CPC分类号： H01S5/18313 ,  H01S5/02288 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18308 ,  H01S2301/176

摘要： An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies a formula (1) as follows: (2m−1)λ/4n−3λ/16n

摘要翻译： 一种光学元件，包括：具有发射表面的表面发射型半导体激光器; 以及形成在表面发射型半导体激光器的发射表面之上的光检测器元件，其中所述光电检测器元件包括具有光吸收层的半导体层，所述半导体层具有满足式（1）的膜厚度d：（ 2m-1）λ/ 4n-3λ/ 16n

公开(公告)号：US07453915B2

公开(公告)日：2008-11-18

申请号：US11566850

申请日：2006-12-05

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01S5/00

CPC分类号： H01S5/06825 ,  B82Y20/00 ,  H01S5/02276 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/173 ,  H01S2301/176

摘要： An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction.

摘要翻译： 光学半导体元件包括：发射激光的表面发射型半导体激光器; 以及设置在从表面发射型半导体激光器发射的激光的光路上的静电击穿保护元件，吸收一部分激光，并且保护表面发射型半导体激光器免受静电破坏。

公开(公告)号：US20080205469A1

公开(公告)日：2008-08-28

申请号：US12033373

申请日：2008-02-19

申请人： Yasutaka IMAI ,  Tetsuo NISHIDA

发明人： Yasutaka IMAI ,  Tetsuo NISHIDA

IPC分类号： H01S5/06

CPC分类号： H01S5/183 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18313 ,  H01S2301/176

摘要： An optical element includes: a surface emitting semiconductor laser portion; a separator formed superjacent to the surface emitting semiconductor laser portion; and a light detector formed superjacent to the separator. The separator electrically separates the surface emitting semiconductor laser portion and the light detector and has a first separation layer made of a first conductive type semiconductor and a second separation layer that is formed one of superjacent to and lower the first separation layer and is made of a second conductive type semiconductor having a refractive index different from a refractive index of the first separation layer. The separator functions as a mirror that reflects at least a part of light having an oscillation wavelength generated from the surface emitting semiconductor laser portion at an interface between the first separation layer and the second separation layer.

摘要翻译： 光学元件包括：表面发射半导体激光器部分; 与表面发射半导体激光器部分相邻的隔膜; 以及与隔板相邻形成的光检测器。 隔板将表面发射半导体激光器部分和光检测器电隔离，并且具有由第一导电类型半导体和第二分离层制成的第一分离层，第一分离层形成在第一分离层的上部和下部之一上，并且由 具有与第一分离层的折射率不同的折射率的第二导电型半导体。 分离器用作将在表面发射半导体激光器部分产生的具有振荡波长的光的至少一部分反射到第一分离层和第二分离层之间的界面处的反射镜。

公开(公告)号：US07339971B2

公开(公告)日：2008-03-04

申请号：US11426444

申请日：2006-06-26

申请人： Masamitsu Mochizuki ,  Yasutaka Imai

发明人： Masamitsu Mochizuki ,  Yasutaka Imai

IPC分类号： H01S5/00 ,  H01L31/14

CPC分类号： H01S5/18313 ,  H01S5/02288 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18308 ,  H01S2301/176

摘要： An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies a formula (1) as follows: (2m−1)λ/4n−3λ/16n

摘要翻译： 一种光学元件，包括：具有发射表面的表面发射型半导体激光器; 以及形成在所述表面发射型半导体激光器的发射表面上方的光检测器元件，其中所述光电检测器元件包括具有光吸收层的半导体层，所述半导体层具有满足公式（1）的膜厚度d如下： （2m-1）λ/ 4n-3lambda / 16n 其中m是整数，n是半导体层的折射率，λ是设计的波长 表面发射型半导体激光器。

公开(公告)号：US20070133637A1

公开(公告)日：2007-06-14

申请号：US11566850

申请日：2006-12-05

申请人： Yasutaka IMAI

发明人： Yasutaka IMAI

IPC分类号： H01S5/00

CPC分类号： H01S5/06825 ,  B82Y20/00 ,  H01S5/02276 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/173 ,  H01S2301/176

摘要： An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction.

摘要翻译： 光学半导体元件包括：发射激光的表面发射型半导体激光器; 以及设置在从表面发射型半导体激光器发射的激光的光路上的静电击穿保护元件，吸收一部分激光，并且保护表面发射型半导体激光器免受静电破坏。

公开(公告)号：US20070081568A1

公开(公告)日：2007-04-12

申请号：US11535730

申请日：2006-09-27

申请人： Yasutaka Imai

发明人： Yasutaka Imai

IPC分类号： H01S3/00 ,  H01S5/00

CPC分类号： H01S5/0264 ,  B82Y20/00 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18313 ,  H01S5/2213 ,  H01S5/3432 ,  H01S2301/176

摘要： An optical semiconductor element includes a surface-emitting type semiconductor laser with a multilayered structure that emits laser light in a direction vertical to a substrate surface, a photodetecting element with a multilayered structure formed above or below the surface-emitting type semiconductor laser, and an electrostatic breakdown protection element that protects the surface-emitting type semiconductor laser from electrostatic destruction, which are provided on the substrate, wherein a pair of input terminals for driving the surface-emitting type semiconductor laser and a pair of output terminals of the photodetecting element are provided independently of one another.

摘要翻译： 光学半导体元件包括具有多个结构的表面发射型半导体激光器，其在垂直于衬底表面的方向上发射激光，具有形成在表面发射型半导体激光器的上方或下方的多层结构的光电检测元件，以及 保护表面发射型半导体激光器免受静电破坏的静电击穿保护元件，其设置在基板上，其中用于驱动表面发射型半导体激光器的一对输入端子和受光元件的一对输出端子是 彼此独立地提供。