公开(公告)号：US20070081356A1

公开(公告)日：2007-04-12

申请号：US11314858

申请日：2005-12-20

Applicant: Kuo-Chih Lee ,  Yi-Chun Lin ,  Sheng-Jie Chen ,  Huang-De Lin

Inventor： Kuo-Chih Lee ,  Yi-Chun Lin ,  Sheng-Jie Chen ,  Huang-De Lin

IPC: F21V7/04

CPC classification number: H01M2/1077 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/613 ,  H01M10/625 ,  H01M10/647 ,  H01M10/6563 ,  H01M10/6566

Abstract: A battery cartridge includes a pair of outer frame members for receiving unit cells and an inner frame member disposed between the outer frame members. The unit cells are mounted between the outer and inner frame members. The inner frame member has a plurality of through-holes, which communicate with the outside while the unit cells are mounted between the outer and inner frame members. An opened type battery module includes such a battery cartridge. The battery cartridge and the battery module have a high structural integration and mechanical strength. Consequently, the present invention has the effect of minimizing the size of a battery system, stably mounting unit cells having low mechanical strength, and effectively removing heat from the unit cells.

Abstract translation: 电池盒包括一对用于接收单元电池的外框架构件和设置在外框构件之间的内框构件。 单元电池安装在外框架件和内框架件之间。 内部框架构件具有多个通孔，该单元电池安装在外部框架构件和内部框架构件之间的同时与外部连通。 开式电池模块包括这样的电池盒。 电池盒和电池组件具有很高的结构集成度和机械强度。 因此，本发明具有使电池系统的尺寸最小化，稳定地安装机械强度低的单元电池，并有效地从单电池去除热量的效果。

公开(公告)号：US07048426B2

公开(公告)日：2006-05-23

申请号：US10841112

申请日：2004-05-07

Applicant: Ko-Chia Kao ,  Yi-Chun Lin ,  Chih-Kuang Chen

Inventor： Ko-Chia Kao ,  Yi-Chun Lin ,  Chih-Kuang Chen

IPC: F21V7/04

CPC classification number: G02B6/0076 ,  G02B6/0055 ,  G02B6/0068

Abstract: A backlight module. The backlight module includes a first light guide, a second light guide, and a plurality of light sources. The second light guide comprises a least one first medium transmissive and a least one second transmissive medium. The transmissive media are disposed between the incident surface and the emergent surface and have different refractive indices. Light emitted from the light sources enters the second light guide through an incident surface of the second light guide and exits the second light guide through an emergent surface thereof. Light emitted from the second light guide enters the first light guide through a first side surface thereof.

Abstract translation: 背光模组。 背光模块包括第一光导，第二光导和多个光源。 第二光导包括至少一个第一介质透射和至少一个第二透射介质。 透射介质设置在入射表面和出射表面之间并且具有不同的折射率。 从光源发射的光通过第二导光体的入射表面进入第二光导，并通过其出射表面离开第二光导。 从第二导光体发射的光通过其第一侧表面进入第一光导。

公开(公告)号：US10750002B2

公开(公告)日：2020-08-18

申请号：US16240793

申请日：2019-01-07

Applicant: Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chang Wu ,  Po-Yueh Lan ,  Yu-Wei Lai ,  Kun-Chang Chen ,  Yi-Chun Lin

Inventor： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chang Wu ,  Po-Yueh Lan ,  Yu-Wei Lai ,  Kun-Chang Chen ,  Yi-Chun Lin

IPC: H04M1/60 ,  H04M1/02

Abstract: A communication device includes a first body, a second body, a first audio module, and a second audio module. The second body is rotatably connected to the first body. The first audio module is disposed on the first body. The second audio module is at least partially disposed on the first body. When the second body rotates relatively to the first body to be in a first state to switch the communication device to be in a first operation mode, at least a portion of the first audio module is turned on, and the second audio module is turned off. When the second body rotates relatively to the first body to be in a second state to switch the communication device to be in a second operation mode, the first audio module is turned off, and the second audio module is turned on.

公开(公告)号：USD885359S1

公开(公告)日：2020-05-26

申请号：US29649213

申请日：2018-05-29

Applicant: Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chun Lin

Designer： Ching-Hua Li ,  Li-Fang Chen ,  Chen-Hsien Cheng ,  Yi-Chun Lin

公开(公告)号：US20180335810A1

公开(公告)日：2018-11-22

申请号：US15983103

申请日：2018-05-18

Applicant: Tung-Ying Wu ,  Yi-Chun Lin ,  Ming-Chung Liu

Inventor： Tung-Ying Wu ,  Yi-Chun Lin ,  Ming-Chung Liu

IPC: G06F1/16

Abstract: An electronic apparatus includes an electronic device and a base. The base includes a base body and a connection structure. The connection structure includes a cover and at least one pivot assembly. The pivot assembly is pivoted between the base body and the cover, such that the cover is adapted to pivot between a closed state and an opened state relatively to the base body. The cover and the base body cover the pivot assembly. The cover has a connection segment. When the electronic device is assembled to the base, the connection segment is adapted to be inserted into a slot of the electronic device.

公开(公告)号：US20150027753A1

公开(公告)日：2015-01-29

申请号：US14340564

申请日：2014-07-25

Applicant: Chun-Ming Huang ,  Yi-Chun Lin ,  Yi-Chen Tsai ,  Ming-Kung Wu

Inventor： Chun-Ming Huang ,  Yi-Chun Lin ,  Yi-Chen Tsai ,  Ming-Kung Wu

IPC: H05K1/02

CPC classification number: G06F3/041 ,  G06F2203/04103 ,  H05K1/0296 ,  H05K3/12 ,  H05K2201/0326 ,  H05K2201/0329 ,  H05K2201/09045 ,  H05K2201/09154 ,  H05K2201/09681 ,  H05K2201/09727

Abstract: A panel structure includes a substrate, a decoration layer and a conductive component. The decoration layer is located in a first region and the rest region is a second region. The decoration layer includes a middle portion and a first edge protruding portion located between the middle portion and the second region and thinner than the middle portion. Each the conductive component extends in a first direction towards the first region from the second region and crosses the first edge protruding portion followed by extending in a second direction on the middle portion of the decoration layer, the first direction intersects the second direction, each the conductive component on the first edge protruding portion has a first width, each the conductive component on the middle portion extends in the second direction and has a second width less than the first width.

Abstract translation: 面板结构包括基板，装饰层和导电部件。 装饰层位于第一区域中，其余区域是第二区域。 装饰层包括位于中间部分和第二区域之间的中间部分和第一边缘突出部分，并且比中间部分薄。 每个导电部件沿着第一方向从第二区域朝向第一区域延伸，并且穿过第一边缘突出部分，然后在装饰层的中间部分上沿第二方向延伸，第一方向与第二方向相交， 第一边缘突出部分上的导电部件具有第一宽度，中间部分上的导电部件在第二方向上延伸，并且具有小于第一宽度的第二宽度。

公开(公告)号：US08483516B2

公开(公告)日：2013-07-09

申请号：US13211195

申请日：2011-08-16

Applicant: Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

Inventor： Shao-Yi Chien ,  Yi-Nung Liu ,  Yi-Chun Lin ,  Ling-Hsiu Huang

IPC: G06K9/32 ,  G06K9/40 ,  H04N7/01 ,  H04N11/20

CPC classification number: G06T3/4053

Abstract: A super resolution (SR) method or system with database-free texture synthesis is disclosed. An input image is up-sampled to result in an up-sampled image. It is determined whether the input image possesses a smooth region. Edges of the up-sampled image are enhanced, and the enhancing edges step is bypassed if the smooth region has been detected. The enhanced or unenhanced up-sampled image is texture synthesized by taking the input image as texture example, thereby resulting in a synthesized image.

Abstract translation: 公开了一种具有无数据库纹理合成的超分辨率（SR）方法或系统。 输入图像被上采样以产生上采样图像。 确定输入图像是否具有平滑区域。 如果已经检测到平滑区域，则上采样图像的边缘被增强，并且增强边缘步骤被旁路。 增强或未增强的上取样图像是通过将输入图像作为纹理示例合成的纹理，从而得到合成图像。

公开(公告)号：US20130051702A1

公开(公告)日：2013-02-28

申请号：US13216055

申请日：2011-08-23

Applicant: SHAO-YI CHIEN ,  Yi-Nung Liu ,  Yi-Chun Lin ,  LING-HSIU HUANG

Inventor： SHAO-YI CHIEN ,  Yi-Nung Liu ,  Yi-Chun Lin ,  LING-HSIU HUANG

IPC: G06K9/32

CPC classification number: G06T3/4007 ,  G06T3/403

Abstract: A direction-adaptive image upsampling system and method using double interpolation is disclosed. Each of double interpolation (DI) units with different interpolation functions receives an input image and generates a corresponding double-interpolated image and an associated double-interpolated difference. A decision unit receives the double-interpolated differences from the DI units for deciding the DI unit that has an optimal interpolation around a pixel under process. An adaptive selector selects the double-interpolated image associated with the DI unit having the optimal interpolation as an output image.

Abstract translation: 公开了一种使用双插值的方向自适应图像上采样系统和方法。 每个具有不同内插函数的双插补（DI）单元接收输入图像并产生相应的双插值图像和相关联的双插值差。 决定单元从DI单元接收双插值差，以决定在正在处理的像素周围具有最佳插值的DI单元。 自适应选择器选择与具有最佳内插的DI单元相关联的双插值图像作为输出图像。

公开(公告)号：US20110039387A1

公开(公告)日：2011-02-17

申请号：US12910591

申请日：2010-10-22

Applicant: Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

Inventor： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

IPC: H01L21/336

CPC classification number: H01L29/1083 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

Abstract translation: 半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

公开(公告)号：US20070170469A1

公开(公告)日：2007-07-26

申请号：US11337147

申请日：2006-01-20

Applicant: Kuo-Ming Wu ,  Jian-Hsing Lee ,  Yi-Chun Lin ,  Chi-Chih Chen

Inventor： Kuo-Ming Wu ,  Jian-Hsing Lee ,  Yi-Chun Lin ,  Chi-Chih Chen

IPC: H01L29/76

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/4238

Abstract: A semiconductor device includes a first doped region disposed on a first well in a semiconductor substrate; a second doped region disposed on a second well adjacent to the first well in the semiconductor substrate, the second doped region having a dopant density higher than that of the second well; and a gate structure overlying parts of the first and second wells for controlling a current flowing between the first and second doped regions. A first spacing distance from an interface between the second doped region and the second well to its closest edge of the gate structure is greater than 200 percent of a second spacing distance from a center point of second doped region to the edge of the gate structure, thereby increasing impedance against an electrostatic discharge (ESD) current flowing between the first and second doped regions during an ESD event.

Abstract translation: 半导体器件包括设置在半导体衬底中的第一阱上的第一掺杂区; 第二掺杂区域，其设置在与所述半导体衬底中的所述第一阱相邻的第二阱上，所述第二掺杂区域的掺杂剂密度高于所述第二阱的掺杂剂密度; 以及覆盖第一和第二阱的部分的栅极结构，用于控制在第一和第二掺杂区域之间流动的电流。 从第二掺杂区域和第二阱之间的界面到其栅极结构的最近边缘的第一间隔距离大于从第二掺杂区域的中心点到栅极结构边缘的第二间隔距离的200％ 从而增加针对在ESD事件期间在第一和第二掺杂区域之间流动的静电放电（ESD）电流的阻抗。