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49 条记录 (耗时 0.03 秒)

    Sealing ring structure of a cosmetic container
    11.
    发明授权
    Sealing ring structure of a cosmetic container 有权
    化妆品容器的密封圈结构

    公开(公告)号：US08789540B2

    公开(公告)日：2014-07-29

    申请号：US13635641

    申请日：2010-10-28

    申请人： Yong Jun Lee ,  Jeen Gee Kim

    发明人： Yong Jun Lee ,  Jeen Gee Kim

    IPC分类号： A45D33/00 ,  A45D33/24 ,  B65D69/00 ,  B65D71/00 ,  B65D43/26 ,  B65D53/00 ,  A45D40/22

    CPC分类号： A45D33/003 ,  A45C13/008 ,  A45C13/1084 ,  A45D33/00 ,  A45D33/006 ,  A45D40/0068 ,  A45D40/222 ,  A45D2200/051 ,  Y10S206/823

    摘要： The present invention provides a novel structure for sealing a cosmetic container using a double-injection molded rib on the container body sealing against a deformable hard-rubber ring on the container cover. The invention will maximize product reliability by improving the sealing structure of a make-up base or cosmetic container through providing a clear, air-tight effect since the sealing structure cannot be deformed, even in the case of long-term use. The invention provides uniform, airtight adhesion without unequal distribution of coupling intensity between internal sealing components when the container cover is closed. Further, the aesthetics of the container are increased because a closure clasp is not necessary, and it is possible to eliminate the problem of dried-out product created when the container is fitted with a closure clasp or similar device.

    摘要翻译： 本发明提供一种用于在容器主体上密封化妆品容器的新型结构，该化妆品容器使用双重注射成型的肋密封在容器盖上的可变形的硬橡胶环上。 本发明通过提供透明的气密效果，即使在长期使用的情况下也不会发生变形，因此通过改善补充基底或化妆品容器的密封结构来最大限度地提高产品的可靠性。 当容器盖关闭时，本发明提供均匀的气密粘合性，而内部密封部件之间的耦合强度分布不均匀。 此外，由于不需要闭合扣，容器的美观性增加，并且可以消除当容器装配有闭合扣或类似装置时产生的干燥产品的问题。

    DISPENSER
    14.
    发明申请
    DISPENSER 审中-公开
    分配器

    公开(公告)号：US20120138654A1

    公开(公告)日：2012-06-07

    申请号：US13389785

    申请日：2010-07-20

    申请人： Yong-jun Lee

    发明人： Yong-jun Lee

    IPC分类号： B65H35/10

    CPC分类号： A47K10/3827 ,  A47K2010/3881 ,  Y10T225/238

    摘要： The present invention relates to a dispenser for supplying a disposable paper product of a roll type such as a toilet paper, a hand towel and etc. The dispenser comprises a main body casing which accommodates the paper product and has a rotating shaft supporting the paper product to be rotatable and a discharging part for discharging the paper product, and a wet type cutting unit which is located at the discharging part to provide liquid to a part of the paper product that is to be cut. According to the present invention, liquid is provided to an area of the paper product to be cut, so that the paper product can be easily cut with a relatively small force.

    摘要翻译： 本发明涉及一种用于供应诸如卫生纸，手巾等的卷型的一次性纸制品的分配器。分配器包括容纳纸制品的主体外壳，并且具有支撑纸制品的旋转轴 以及用于排出纸制品的排出部分，以及位于排出部分处以向待切割的纸制品的一部分提供液体的湿式切割单元。 根据本发明，液体被提供到待切割的纸制品的区域，使得纸制品能够以相对小的力容易地切割。

    Lateral double diffused MOS device and method for manufacturing the same
    15.
    发明授权
    Lateral double diffused MOS device and method for manufacturing the same 有权
    横向双扩散MOS器件及其制造方法

    公开(公告)号：US08058129B2

    公开(公告)日：2011-11-15

    申请号：US12615096

    申请日：2009-11-09

    申请人： Yong-Jun Lee

    发明人： Yong-Jun Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681

    摘要： A lateral double diffused metal oxide semiconductor (LDMOS) device and a method of manufacturing the same. A LDMOS device may include a high voltage well formed over a substrate, a reduced surface field region formed thereover which may be adjacent a body region, and/or an isolation layer. An isolation layer may include a predetermined area formed over a reduced surface field region, may be partially overlapped with a top surface of a substrate and/or may include an area formed adjacent a high voltage well. A low voltage well may be formed over a substrate. A gate electrode may extend from a predetermined top surface of a body region to a predetermined top surface of an isolation layer. A drain region may be formed over a low voltage well. A source region may be formed over a body region and may have at least a portion formed under a gate electrode.

    摘要翻译： 横向双扩散金属氧化物半导体（LDMOS）器件及其制造方法。 LDMOS器件可以包括在衬底上形成的高电压井，形成在其上的减小的表面场区域，其可以与身体区域相邻，和/或隔离层。 隔离层可以包括在还原表面场区域上形成的预定区域，可以与衬底的顶表面部分地重叠，和/或可以包括邻近高电压阱形成的区域。 可以在衬底上形成低电压阱。 栅电极可以从体区的预定顶表面延伸到隔离层的预定顶表面。 可以在低电压阱上形成漏极区。 源极区域可以形成在体区域上并且可以具有形成在栅电极下方的至少一部分。

    Method of manufacturing non-volatile memory device
    18.
    发明授权
    Method of manufacturing non-volatile memory device 失效
    制造非易失性存储器件的方法

    公开(公告)号：US07608505B2

    公开(公告)日：2009-10-27

    申请号：US11643880

    申请日：2006-12-22

    申请人： Yong Jun Lee

    发明人： Yong Jun Lee

    IPC分类号： H01L21/8247

    CPC分类号： H01L21/28282 ,  H01L29/4234 ,  H01L29/792

    摘要： A method of manufacturing a non-volatile memory device includes the steps of: defining an active region on a semiconductor substrate; forming a charge storage layer on the active region; forming a first conductive pattern on the charge storage layer, wherein the first conductive pattern has a bottom portion larger in width than a top portion thereof, the first conductive pattern further having a sloping sidewall connecting the top and bottom portions; forming an oxide layer on the sidewall of the first conductive pattern; forming a conformal second conductive layer on the first conductive pattern and on the active region around the first conductive pattern; and patterning the first conductive pattern and the second conductive layer to form a pair of first electrodes and a pair of second electrodes, respectively.

    摘要翻译： 制造非易失性存储器件的方法包括以下步骤：在半导体衬底上限定有源区; 在有源区上形成电荷存储层; 在所述电荷存储层上形成第一导电图案，其中所述第一导电图案具有宽度大于其顶部的底部，所述第一导电图案还具有连接所述顶部和底部的倾斜侧壁; 在第一导电图案的侧壁上形成氧化物层; 在所述第一导电图案上以及围绕所述第一导电图案的所述有源区上形成保形第二导电层; 以及图案化所述第一导电图案和所述第二导电层，以分别形成一对第一电极和一对第二电极。

    FLASH MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    19.
    发明申请
    FLASH MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 失效
    闪存存储器件及其制造方法

    公开(公告)号：US20090065847A1

    公开(公告)日：2009-03-12

    申请号：US12203951

    申请日：2008-09-04

    申请人： Yong-Jun Lee

    发明人： Yong-Jun Lee

    IPC分类号： H01L29/00 ,  H01L21/3205

    CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/11568 ,  H01L27/11573

    摘要： An embedded flash memory device and a method for fabricating the same which reduces the size of a memory device using logic CMOS fabricating processes and enhancing a coupling ratio of the memory device. The flash memory device includes a coupling oxide layer on an active area of a semiconductor substrate, a first control gate formed on and/or over the coupling oxide layer and a second control gate formed on and/or over and enclosing lateral sidewalls of the coupling oxide layer and the first control gate.

    摘要翻译： 一种嵌入式闪存器件及其制造方法，其使用逻辑CMOS制造工艺减小存储器件的尺寸并增强存储器件的耦合比。 闪存器件包括在半导体衬底的有效区域上的耦合氧化物层，形成在耦合氧化物层上和/或上的耦合氧化物层上的第一控制栅极和形成在耦合器的侧壁和/ 氧化物层和第一控制栅极。