公开(公告)号：US20080185590A1

公开(公告)日：2008-08-07

申请号：US11930536

申请日：2007-10-31

Applicant: Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

Inventor： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L29/04 ,  H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract translation: 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US20080176364A1

公开(公告)日：2008-07-24

申请号：US11841336

申请日：2007-08-20

Applicant: Sung-Hoon YANG ,  Byoung-June KIM ,  Yong-Mo CHOI

Inventor： Sung-Hoon YANG ,  Byoung-June KIM ,  Yong-Mo CHOI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1248 ,  H01L27/1288

Abstract: The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH4, and forming pixel electrodes on the passivation film

Abstract translation: 本发明提供了一种制造薄膜晶体管基板的方法，包括在绝缘基板上形成栅极线，在栅极线上形成氧化物有源层图案，在氧化物有源层图案上形成数据线，使得数据线与栅极线交叉 在氧化物活性层图案和数据线上使用非还原反应气体和SiH 4 S 4形成钝化膜，并在钝化膜上形成像素电极

公开(公告)号：US20120003768A1

公开(公告)日：2012-01-05

申请号：US13231225

申请日：2011-09-13

Applicant: Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

Inventor： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

IPC: H01L33/16

CPC classification number: H01L27/12 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

Abstract translation: 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

公开(公告)号：US08044405B2

公开(公告)日：2011-10-25

申请号：US12429388

申请日：2009-04-24

Applicant: Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

Inventor： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

IPC: H01L29/12 ,  H01L21/336

CPC classification number: H01L27/12 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

Abstract translation: 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

公开(公告)号：US07847291B2

公开(公告)日：2010-12-07

申请号：US12486328

申请日：2009-06-17

Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  O-Sung Seo ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Seong-Hun Kim ,  Yong-Mo Choi

Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  O-Sung Seo ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Seong-Hun Kim ,  Yong-Mo Choi

IPC: H01L29/04

CPC classification number: H01L27/12 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.

Abstract translation: 显示基板包括： 衬底，布置在衬底上的栅电极，布置在栅电极上的半导体图案，布置在半导体图案上的源电极，布置在半导体图案上并与源电极间隔开的漏电极，布置在 并且基本上覆盖源电极和漏极以覆盖源电极和漏电极，布置在绝缘层上并与半导体图案重叠的导电层图案，与漏电极电连接的像素电极，以及 存储电极，设置在所述基板上，与所述像素电极重叠地重叠，所述存储电极与所述导电层图案电连接。

公开(公告)号：US07838886B2

公开(公告)日：2010-11-23

申请号：US12401959

申请日：2009-03-11

Applicant: Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

Inventor： Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

IPC: H01L29/04

CPC classification number: G02F1/136213 ,  H01L27/1255

Abstract: A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

Abstract translation: 一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。 因此，可以形成足够的存储电容，而不会降低开口率并且防止液晶显示器的透射率。 此外，可以通过连接到栅极金属层的连接构件充分形成电容。

公开(公告)号：US20100051957A1

公开(公告)日：2010-03-04

申请号：US12401959

申请日：2009-03-11

Applicant: Dong-Gyu KIM ,  Sung-Haeng CHO ,  Hyung-Jun KIM ,  Sung-Ryul KIM ,  Yong-Mo CHOI

Inventor： Dong-Gyu KIM ,  Sung-Haeng CHO ,  Hyung-Jun KIM ,  Sung-Ryul KIM ,  Yong-Mo CHOI

IPC: H01L33/00

CPC classification number: G02F1/136213 ,  H01L27/1255

Abstract: A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

Abstract translation: 一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。 因此，可以形成足够的存储电容，而不会降低开口率并且防止液晶显示器的透射率。 此外，可以通过连接到栅极金属层的连接构件充分形成电容。

公开(公告)号：US20100006835A1

公开(公告)日：2010-01-14

申请号：US12486328

申请日：2009-06-17

Applicant: Kap-Soo YOON ,  Sung-Hoon YANG ,  Sung-Ryul KIM ,  O-Sung SEO ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Seong-Hun KIM ,  Yong-Mo CHOI

Inventor： Kap-Soo YOON ,  Sung-Hoon YANG ,  Sung-Ryul KIM ,  O-Sung SEO ,  Hwa-Yeul OH ,  Jae-Ho CHOI ,  Seong-Hun KIM ,  Yong-Mo CHOI

IPC: H01L29/786

CPC classification number: H01L27/12 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.

Abstract translation: 显示基板包括： 衬底，布置在衬底上的栅电极，布置在栅电极上的半导体图案，布置在半导体图案上的源电极，布置在半导体图案上并与源电极间隔开的漏电极，布置在 并且基本上覆盖源电极和漏极以覆盖源电极和漏电极，布置在绝缘层上并与半导体图案重叠的导电层图案，与漏电极电连接的像素电极，以及 存储电极，设置在所述基板上，与所述像素电极重叠地重叠，所述存储电极与所述导电层图案电连接。

公开(公告)号：US20090251656A1

公开(公告)日：2009-10-08

申请号：US12391541

申请日：2009-02-24

Applicant: Bong-Kyu Shin ,  Seung-Jae Jung ,  Sang-Uk Lim ,  Sang-Woo Whangbo ,  Jae-Ho Choi ,  Hwa-Yeul Oh ,  Yong-Mo Choi

Inventor： Bong-Kyu Shin ,  Seung-Jae Jung ,  Sang-Uk Lim ,  Sang-Woo Whangbo ,  Jae-Ho Choi ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: G02F1/1333 ,  H05K3/00

CPC classification number: G02F1/133345 ,  G02F1/13454

Abstract: A display substrate includes a soda-lime glass substrate, a barrier pattern, and first, second and third conductive patterns. The soda-lime glass substrate has a pixel area. The first conductive pattern includes a gate line formed on the soda-lime glass substrate and from a first conductive layer. The barrier pattern is formed between the first conductive pattern and the soda-lime glass substrate. The second conductive pattern includes a data line crossing the gate line. The data line is formed on the first conductive pattern and from a second conductive layer. The third conductive pattern includes a pixel electrode formed in the pixel area of the soda-lime glass substrate. The pixel electrode is formed on the second conductive pattern and from a third conductive layer.

Abstract translation: 显示基板包括钠钙玻璃基板，阻挡图案以及第一，第二和第三导电图案。 钠钙玻璃基板具有像素面积。 第一导电图案包括形成在钠钙玻璃基板上和从第一导电层形成的栅极线。 在第一导电图案和钠钙玻璃基板之间形成阻挡图案。 第二导电图案包括与栅极线交叉的数据线。 数据线形成在第一导电图案上和从第二导电层形成。 第三导电图案包括形成在钠钙玻璃基板的像素区域中的像素电极。 像素电极形成在第二导电图案上并由第三导电层形成。

公开(公告)号：US20080179598A1

公开(公告)日：2008-07-31

申请号：US12018750

申请日：2008-01-23

Applicant: Byoung-june KIM ,  Yong-mo Choi ,  Beohm-rock Choi ,  Sung-hoon Yang ,  Hwa-yeul Oh ,  Jae-ho Choi ,  Jong-moo Huh

Inventor： Byoung-june KIM ,  Yong-mo Choi ,  Beohm-rock Choi ,  Sung-hoon Yang ,  Hwa-yeul Oh ,  Jae-ho Choi ,  Jong-moo Huh

IPC: H01L29/04 ,  H01L21/336

CPC classification number: H01L27/1251 ,  H01L27/1214 ,  H01L27/127

Abstract: A display device includes an insulating substrate, a switching TFT formed on the substrate that receives a data voltage and that includes a first semiconductor layer, a driving TFT formed on the substrate that includes a control terminal connected to an output terminal of the switching TFT and a second semiconductor layer including polysilicon and a halogen material, an insulating layer formed on the switching TFT and the driving TFT, a first electrode formed on the insulating layer and electrically connected to an output terminal of the driving TFT, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer.

Abstract translation: 显示装置包括绝缘基板，形成在基板上的开关TFT，其接收数据电压，并且包括第一半导体层，形成在基板上的驱动TFT，该驱动TFT包括连接到开关TFT的输出端子的控制端子，以及 包括多晶硅和卤素材料的第二半导体层，形成在开关TFT和驱动TFT上的绝缘层，形成在绝缘层上并电连接到驱动TFT的输出端的第一电极，形成有机发光层 在第一电极上形成的第二电极和形成在有机发光层上的第二电极。