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    FILM FORMATION METHOD AND FILM FORMATION APPARATUS
    11.
    发明申请
    FILM FORMATION METHOD AND FILM FORMATION APPARATUS 审中-公开
    电影形成方法和电影制作装置

    公开(公告)号：US20110281443A1

    公开(公告)日：2011-11-17

    申请号：US13106140

    申请日：2011-05-12

    Applicant: Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

    Inventor： Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

    IPC: H01L21/316 ,  C23C16/40

    CPC classification number: C23C16/402

    Abstract: The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.

    Abstract translation: 成膜方法包括将待处理物体转移到处理室中; 将待处理物体的温度控制在350℃以下; 将作为Si源气体和氧化气体的氨基硅烷气体供给到处理室中，其中，所述氧化气体由包含选自O 2气体和O 3气体中的至少一种的第一氧化气体构成， 包含选自H 2 O气体和H 2 O 2气体中的至少一种的氧化气体，从而在待处理物体的表面上形成氧化硅膜。

    Method of forming a modified layer in a substrate
    12.
    发明授权
    Method of forming a modified layer in a substrate 有权
    在基材中形成改性层的方法

    公开(公告)号：US07927974B2

    公开(公告)日：2011-04-19

    申请号：US12270649

    申请日：2008-11-13

    Applicant: Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

    Inventor： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

    IPC: H01L21/00

    CPC classification number: B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

    Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

    Abstract translation: 首先，获得存储中断区域的映射数据。 在第一改质层形成工序中，在堆叠制品层叠在基板的正面上之前，基于映射数据将激光束导向到中断区域，仅在中断区域形成修饰层。 在层叠的物品堆叠在基板上之后，在第二改质层形成工序中，在第一改质层形成工序中，至少将激光束指向不具有改性层的规定的分割线，形成修饰层 。

    Method of forming embrittled areas inside wafer for division
    14.
    发明授权
    Method of forming embrittled areas inside wafer for division 有权
    在晶片内部形成脆化区域的划分方法

    公开(公告)号：US07728257B2

    公开(公告)日：2010-06-01

    申请号：US11878449

    申请日：2007-07-24

    Applicant: Yosuke Watanabe

    Inventor： Yosuke Watanabe

    IPC: B23K26/02 ,  H01L21/00

    CPC classification number: H01L21/78 ,  B23K26/38 ,  H01L21/67092

    Abstract: A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

    Abstract translation: 一种在晶片内形成多层脆化区域的方法，以便即使在脆化区域相交的区域也能够正确地分割晶片。 在第一方向脆化步骤中，脆化区域形成为底层，在第二方向脆化步骤中，脆化区域形成为底层和第二层，在第一方向脆化步骤中，脆化区域形成为第二层 和第三层，然后交替地实施第二方向脆化步骤和第一方向脆化步骤，最后，在第二方向脆化步骤中，形成脆化区域作为顶层，使得未加工区域的长度 包含在不干扰分裂的范围内。

    METHOD OF FORMING A MODIFIED LAYER IN A SUBSTRATE
    15.
    发明申请
    METHOD OF FORMING A MODIFIED LAYER IN A SUBSTRATE 有权
    在基板上形成改性层的方法

    公开(公告)号：US20090149002A1

    公开(公告)日：2009-06-11

    申请号：US12270649

    申请日：2008-11-13

    Applicant: Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

    Inventor： Yosuke Watanabe ,  Kenji Furuta ,  Kiyoshi Ohsuga

    IPC: H01L21/268

    CPC classification number: B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

    Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

    Abstract translation: 首先，获得存储中断区域的映射数据。 在第一改质层形成工序中，在堆叠制品层叠在基板的正面上之前，基于映射数据将激光束导向到中断区域，仅在中断区域形成修饰层。 在层叠的物品堆叠在基板上之后，在第二改质层形成工序中，在第一改质层形成工序中，至少将激光束指向不具有改性层的规定的分割线，形成修饰层 。

    Cable coupling connector
    20.
    发明授权
    Cable coupling connector 失效
    电缆耦合连接器

    公开(公告)号：US08758059B2

    公开(公告)日：2014-06-24

    申请号：US13520684

    申请日：2010-12-28

    Applicant: Yosuke Watanabe ,  Yuichi Sasaki ,  Chiharu Miyazaki ,  Naoto Oka ,  Koichiro Misu

    Inventor： Yosuke Watanabe ,  Yuichi Sasaki ,  Chiharu Miyazaki ,  Naoto Oka ,  Koichiro Misu

    IPC: H01R13/66

    CPC classification number: H01R31/06 ,  H01R13/501 ,  H01R13/502 ,  H01R13/6625 ,  H01R13/6633 ,  H01R13/7197 ,  H01R24/44

    Abstract: A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner portion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.

    Abstract translation: 一种电缆耦合器，包括具有内部导体的外部气缸机构，所述内部导体用于将内部导体本身与屏蔽电缆的外部导体电连接，具有比内部导体更大的直径的外部导体，设置在内部导体和 外导体和电容器，其设置在间隙部分中，用于电连接外导体和内导体，外筒机构的内部能够沿纵向方向打开和关闭，内部耦合机构设置在内导体 内部导体，并且具有用于保持屏蔽电缆的芯线的连接销，用于电连接屏蔽电缆的芯线和用于保持外部气缸机构的基座和用于将外部气缸机构电连接到外部导体。

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