公开(公告)号：US09139914B2

公开(公告)日：2015-09-22

申请号：US14259628

申请日：2014-04-23

Applicant: Ajou University Industry-Academic Cooperation Foundation

Inventor： Chang-Koo Kim ,  Sung-Woon Cho

IPC: H01L21/00 ,  C23F1/12 ,  B22F1/00 ,  C23C18/16 ,  C23C18/18 ,  C23C18/40 ,  H01L21/288 ,  C23F4/00

CPC classification number: C23F1/12 ,  B22F1/0018 ,  B22F1/0044 ,  B22F9/02 ,  B22F2001/0037 ,  B22F2304/05 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/034 ,  C23C18/1605 ,  C23C18/1657 ,  C23C18/1893 ,  C23C18/405 ,  C23F4/00 ,  H01J2237/0203 ,  H01J2237/3341 ,  H01L21/288 ,  Y10T29/49982

Abstract: This invention relates to a method of fabricating a three-dimensional copper nanostructure, including manufacturing a specimen configured to include a SiO2 mask; performing multi-directional slanted plasma etching to form a three-dimensional etching structure layer on the specimen; performing plating so that a multi-directional slanted plasma etched portion of the specimen is filled with a metal; removing an over-plated portion and the SiO2 mask from the metal layer; and removing a portion of a surface of the specimen other than the metal which is the three-dimensional etching structure layer. In this invention, a uniform copper nanostructure array can be obtained by subjecting a large-area specimen disposed in a Faraday cage to multi-directional slanted plasma etching using high-density plasma, forming a copper film on the etched portion of the specimen, and removing an over-plated copper film and the SiO2 mask, and the diameter of the copper nanostructure can be arbitrarily adjusted, thus attaining high applicability.

Abstract translation: 本发明涉及一种制造三维铜纳米结构的方法，包括制造被配置为包括SiO 2掩模的试样; 执行多方向倾斜等离子体蚀刻以在样本上形成三维蚀刻结构层; 进行电镀，使得样品的多方向倾斜等离子体蚀刻部分被金属填充; 从金属层去除过镀层部分和SiO 2掩模; 除去除了作为三维蚀刻结构层的金属以外的试样的表面的一部分。 在本发明中，通过对设在法拉第笼中的大面积试样进行多层倾斜等离子体蚀刻，使用高密度等离子体，在试样的蚀刻部分上形成铜膜，可以得到均匀的铜纳米结构体， 去除过镀铜膜和SiO 2掩模，并且可以任意调整铜纳米结构的直径，从而获得高适用性。

公开(公告)号：US12217970B2

公开(公告)日：2025-02-04

申请号：US17923495

申请日：2021-03-02

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Chang-Koo Kim ,  Jun-Hyun Kim

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

Abstract: Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.

公开(公告)号：US20210226422A1

公开(公告)日：2021-07-22

申请号：US17223381

申请日：2021-04-06

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION ,  SMART ELECTRONICS INC.

Inventor： Chang-Koo Kim ,  Hae-Min Lee ,  Doo Won Kang ,  Hyun Chang Kim

IPC: H01T4/12 ,  H01T21/00 ,  C23C18/50 ,  C23C18/18 ,  C23C18/16 ,  C23C18/36

Abstract: A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

公开(公告)号：US09493345B2

公开(公告)日：2016-11-15

申请号：US14761467

申请日：2013-04-19

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Sung-Woon Cho ,  Chang-Koo Kim

IPC: C25F3/00 ,  B81C1/00 ,  H01L21/288 ,  H01L21/321 ,  H01L21/3213

CPC classification number: B81C1/00031 ,  B81B2203/0361 ,  G02B1/005 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32651 ,  H01L21/288 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32137

Abstract: The present invention provides a method for fabricating slanted copper nanorods. The method includes manufacturing a workpiece configured to include an etch stop layer on a wafer, placing the workpiece in a slanted position, and etching the slanted workpiece, forming a copper (Cu) layer on the slanted workpiece by plating, removing an over-plated portion from the copper layer, and removing a polysilicon (poly Si) excluding copper from the surface of the workpiece. According to the invention, copper nanorod structures having a uniform array can be fabricated in a large area at a high process yield compared to conventional methods. In addition, the angle and diameter of copper nanorods can be controlled as desired so that the applicability thereof can be greatly increased. Moreover, the present invention can be applied to processes for fabricating various devices, including semiconductor devices, MEMSs (microelectromechanical systems), optical devices, gas sensors, display devices, etc.

Abstract translation: 本发明提供一种制造倾斜铜纳米棒的方法。 该方法包括制造被配置为在晶片上包括蚀刻停止层的工件，将工件放置在倾斜位置，并蚀刻倾斜的工件，通过电镀在倾斜工件上形成铜（Cu）层，去除过镀 从所述铜层除去从所述工件表面除去铜以外的多晶硅（多晶硅）。 根据本发明，与常规方法相比，具有均匀阵列的铜纳米棒结构可以以高工艺产量在大面积上制造。 此外，可以根据需要控制铜纳米棒的角度和直径，从而可以大大提高其适用性。 此外，本发明可以应用于制造包括半导体器件，MEMS（微机电系统），光学器件，气体传感器，显示器件等的各种器件的工艺。

公开(公告)号：US20150037597A1

公开(公告)日：2015-02-05

申请号：US14259628

申请日：2014-04-23

Applicant: Ajou University Industry-Academic Cooperation Foundation

Inventor： Chang-Koo Kim ,  Sung-Woon Cho

IPC: H01J37/32 ,  C23C18/38 ,  C23F1/12 ,  C23C18/32 ,  C23C18/31 ,  C23C18/18 ,  B22F1/00 ,  C23C18/42

CPC classification number: C23F1/12 ,  B22F1/0018 ,  B22F1/0044 ,  B22F9/02 ,  B22F2001/0037 ,  B22F2304/05 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/034 ,  C23C18/1605 ,  C23C18/1657 ,  C23C18/1893 ,  C23C18/405 ,  C23F4/00 ,  H01J2237/0203 ,  H01J2237/3341 ,  H01L21/288 ,  Y10T29/49982

Abstract: This invention relates to a method of fabricating a three-dimensional copper nanostructure, including manufacturing a specimen configured to include a SiO2 mask; performing multi-directional slanted plasma etching to form a three-dimensional etching structure layer on the specimen; performing plating so that a multi-directional slanted plasma etched portion of the specimen is filled with a metal; removing an over-plated portion and the SiO2 mask from the metal layer; and removing a portion of a surface of the specimen other than the metal which is the three-dimensional etching structure layer. In this invention, a uniform copper nanostructure array can be obtained by subjecting a large-area specimen disposed in a Faraday cage to multi-directional slanted plasma etching using high-density plasma, forming a copper film on the etched portion of the specimen, and removing an over-plated copper film and the SiO2 mask, and the diameter of the copper nanostructure can be arbitrarily adjusted, thus attaining high applicability.

Abstract translation: 本发明涉及一种制造三维铜纳米结构的方法，包括制造被配置为包括SiO 2掩模的试样; 执行多方向倾斜等离子体蚀刻以在样本上形成三维蚀刻结构层; 进行电镀，使得样品的多方向倾斜等离子体蚀刻部分被金属填充; 从金属层去除过镀层部分和SiO 2掩模; 除去除了作为三维蚀刻结构层的金属以外的试样的表面的一部分。 在本发明中，通过对设在法拉第笼中的大面积试样进行多层倾斜等离子体蚀刻，使用高密度等离子体，在试样的蚀刻部分上形成铜膜，可以得到均匀的铜纳米结构体， 去除过镀铜膜和SiO 2掩模，并且可以任意调整铜纳米结构的直径，从而获得高适用性。