公开(公告)号：US20140272684A1

公开(公告)日：2014-09-18

申请号：US14139415

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Ralf Hofmann ,  Cara Beasley ,  Majeed Foad

IPC: G03F1/22 ,  C23C14/04 ,  C23C16/04 ,  C23C14/50 ,  C23C16/458 ,  C23C16/50

CPC classification number: G03F1/22 ,  C23C14/50 ,  C23C16/4583 ,  G03F7/16 ,  H01J37/32715 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3447

Abstract: A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

Abstract translation: 一种处理系统包括：真空室; 附接在真空室周围的多个处理系统; 以及真空室中的晶片处理系统，用于在多个处理系统之间移动晶片而不退出真空。 一种用于制造极紫外线空白的物理气相沉积系统，包括：包含钼，钼合金或其组合的靶。

公开(公告)号：US10551731B2

公开(公告)日：2020-02-04

申请号：US15107054

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Ralf Hofmann ,  Majeed Foad ,  Cara Beasley

IPC: C23C16/34 ,  G03F1/22 ,  C23C16/40 ,  C03C17/245

Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.

公开(公告)号：US09829805B2

公开(公告)日：2017-11-28

申请号：US15357085

申请日：2016-11-21

Applicant: Applied Materials, Inc.

Inventor： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

IPC: G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  G03F7/16 ,  G03F7/09

CPC classification number: G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

公开(公告)号：US09632411B2

公开(公告)日：2017-04-25

申请号：US14139457

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

IPC: G03C5/00 ,  G03F7/00 ,  G03F7/16 ,  G03F7/09 ,  G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

公开(公告)号：US09354508B2

公开(公告)日：2016-05-31

申请号：US14139307

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/70958

Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。

公开(公告)号：US20140268080A1

公开(公告)日：2014-09-18

申请号：US14139307

申请日：2013-12-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/70958

Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。