公开(公告)号：US20220389571A1

公开(公告)日：2022-12-08

申请号：US17825229

申请日：2022-05-26

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Philip A. Kraus ,  Thai Cheng Chua ,  James Canducci ,  Hanhong Chen ,  Zhejun Zhang ,  Hao Zhang ,  Xiankai Yu

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

公开(公告)号：US20220344131A1

公开(公告)日：2022-10-27

申请号：US17852086

申请日：2022-06-28

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/511

Abstract: Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

公开(公告)号：US20210098231A1

公开(公告)日：2021-04-01

申请号：US16586482

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Vladimir Knyazik ,  Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

公开(公告)号：US20210098230A1

公开(公告)日：2021-04-01

申请号：US16586462

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Philip Allan Kraus

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.

公开(公告)号：US10714372B2

公开(公告)日：2020-07-14

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Philip Allan Kraus ,  Travis Lee Koh ,  Christian Amormino ,  Jaeyong Cho

IPC: H01L21/00 ,  H01L21/683 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  H01L21/67 ,  H01L21/687 ,  C23C16/50 ,  C23C16/46 ,  H01L21/02 ,  H01L21/223 ,  H01L21/3065

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US12144090B2

公开(公告)日：2024-11-12

申请号：US18082452

申请日：2022-12-15

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H05B6/64 ,  H05B6/80

Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

公开(公告)号：US11721532B2

公开(公告)日：2023-08-08

申请号：US17338510

申请日：2021-06-03

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

IPC: H01J37/32 ,  H01J27/18 ,  H05H1/46 ,  C23C16/511 ,  C23C14/35

CPC classification number: H01J37/32678 ,  C23C14/357 ,  C23C16/511 ,  H01J27/18 ,  H01J37/3222 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32266 ,  H01J37/32669 ,  H01J37/32935 ,  H05H1/46

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

公开(公告)号：US20230135935A1

公开(公告)日：2023-05-04

申请号：US18082452

申请日：2022-12-15

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H05B6/64 ,  H05B6/80

Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

公开(公告)号：US20230026546A1

公开(公告)日：2023-01-26

申请号：US17960535

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Philip Allan Kraus

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.