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    SEMICONDUCTOR DEPOSITION REACTOR AND COMPONENTS FOR REDUCED QUARTZ DEVITRIFICATION
    14.
    发明申请
    SEMICONDUCTOR DEPOSITION REACTOR AND COMPONENTS FOR REDUCED QUARTZ DEVITRIFICATION 有权

    公开(公告)号：US20230002895A1

    公开(公告)日：2023-01-05

    申请号：US17810094

    申请日：2022-06-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

    IPC: C23C16/458 ,  C23C16/455

    Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

    Semiconductor deposition reactor and components for reduced quartz devitrification
    17.
    发明授权
    Semiconductor deposition reactor and components for reduced quartz devitrification 有权

    公开(公告)号：US12234554B2

    公开(公告)日：2025-02-25

    申请号：US17810094

    申请日：2022-06-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

    IPC: C23C16/458 ,  C23C16/455

    Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

    Susceptor
    18.
    外观设计
    Susceptor 有权

    公开(公告)号：USD1030687S1

    公开(公告)日：2024-06-11

    申请号：US29840698

    申请日：2022-05-31

    Applicant: ASM IP Holding B.V.

    Designer： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

    Abstract: FIG. 1 is a front perspective view of a susceptor, showing our new design;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is right side view thereof;
    FIG. 4 is a left side view thereof;
    FIG. 5 is front view thereof;
    FIG. 6 is back view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.

    Semiconductor deposition reactor ring
    19.
    外观设计
    Semiconductor deposition reactor ring 有权

    公开(公告)号：USD1028913S1

    公开(公告)日：2024-05-28

    申请号：US29797476

    申请日：2021-06-30

    Applicant: ASM IP HOLDING B.V.

    Designer： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

    Abstract: FIG. 1 is a top perspective view of a semiconductor deposition reactor ring;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a back view thereof;
    FIG. 5 is a left view thereof;
    FIG. 6 is a right view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.
    The broken lines in the drawings illustrate portions of the semiconductor deposition reactor ring that form no part of the claimed design.

    SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS, AND MATERIAL LAYER DEPOSITION METHODS
    20.
    发明公开
    SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS, AND MATERIAL LAYER DEPOSITION METHODS 审中-公开

    公开(公告)号：US20230386874A1

    公开(公告)日：2023-11-30

    申请号：US18324411

    申请日：2023-05-26

    Applicant: ASM IP Holding, B.V.

    Inventor： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

    IPC: H01L21/673 ,  H01L21/687 ,  H01L21/02 ,  H01L21/3213

    CPC classification number: H01L21/67316 ,  H01L21/68742 ,  H01L21/02293 ,  H01L21/3213

    Abstract: A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.

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