公开(公告)号：US20190229008A1

公开(公告)日：2019-07-25

申请号：US16205899

申请日：2018-11-30

Applicant: ASM IP Holding B.V.

Inventor： Uday Kiran Rokkam ,  Eric Hill

IPC: H01L21/687

Abstract: A lift pin and a substrate support assembly and reactor including the lift pin are disclosed. The lift pin includes first section comprising a material having a first transparency and a second section comprising a material having a second transparency. The lift pin can provide improved temperature uniformity across substrate support assembly including the lift pin during substrate processing.

公开(公告)号：US10053774B2

公开(公告)日：2018-08-21

申请号：US14738012

申请日：2015-06-12

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric Hill

IPC: C23C16/44 ,  C23C16/458 ,  H05B6/10 ,  C23C16/46 ,  C23C14/02 ,  C23C14/50 ,  C23C16/02

CPC classification number: C23C16/4405 ,  C23C14/021 ,  C23C14/50 ,  C23C16/0209 ,  C23C16/0218 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/46 ,  H05B3/26 ,  H05B6/105

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US09890456B2

公开(公告)日：2018-02-13

申请号：US14465252

申请日：2014-08-21

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Eric Hill ,  Jereld Lee Winkler

IPC: B01J19/24 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/452

CPC classification number: C23C16/46 ,  C23C16/452 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32816

Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

公开(公告)号：US12040217B2

公开(公告)日：2024-07-16

申请号：US18100660

申请日：2023-01-24

Applicant: ASM IP Holding B.V.

Inventor： Eric Hill ,  John DiSanto

IPC: H01L21/687 ,  C23C16/458 ,  C30B25/08 ,  C30B25/12 ,  H01L21/67

CPC classification number: H01L21/68742 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/08 ,  C30B25/12 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/68792 ,  H01L21/67126 ,  H01L21/68757

Abstract: A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

公开(公告)号：US20220367175A1

公开(公告)日：2022-11-17

申请号：US17875907

申请日：2022-07-28

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20190019670A1

公开(公告)日：2019-01-17

申请号：US16000109

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  B08B7/00

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20180312968A1

公开(公告)日：2018-11-01

申请号：US16029130

申请日：2018-07-06

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric Hill

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/02 ,  C23C14/50 ,  C23C16/46 ,  H05B6/10 ,  C23C14/02

CPC classification number: C23C16/4405 ,  C23C14/021 ,  C23C14/50 ,  C23C16/0209 ,  C23C16/0218 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/46 ,  H05B3/26 ,  H05B6/105

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US20180127876A1

公开(公告)日：2018-05-10

申请号：US15860564

申请日：2018-01-02

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Eric Hill ,  Jereld Lee Winkler

IPC: C23C16/46 ,  H01J37/32 ,  C23C16/50 ,  C23C16/452 ,  C23C16/52

Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

公开(公告)号：US20220307139A1

公开(公告)日：2022-09-29

申请号：US17840960

申请日：2022-06-15

Applicant: ASM IP Holding B.V.

Inventor： Hyeongeu Kim ,  Tom Kirschenheiter ,  Eric Hill ,  Mark Hawkins ,  Loren Jacobs

IPC: C23C16/52 ,  C23C16/24 ,  C23C16/44 ,  C23C16/458

Abstract: A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

公开(公告)号：US20190051555A1

公开(公告)日：2019-02-14

申请号：US15672096

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Hill ,  John DiSanto

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C30B25/08

CPC classification number: H01L21/68742 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/08 ,  C30B25/12 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/68757 ,  H01L21/68792

Abstract: A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.