公开(公告)号：US09803277B1

公开(公告)日：2017-10-31

申请号：US15177195

申请日：2016-06-08

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/7685

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20240150894A1

公开(公告)日：2024-05-09

申请号：US18413533

申请日：2024-01-16

Applicant: ASM IP Holding B.V.

Inventor： Toshiharu Watarai ,  Hiroki Arai ,  Toshio Nakanishi ,  Yoshiyuki Kikuchi ,  Ryo Miyama

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01J37/3288

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

公开(公告)号：US20210071296A1

公开(公告)日：2021-03-11

申请号：US17010561

申请日：2020-09-02

Applicant: ASM IP Holding B.V.

Inventor： Toshiharu Watarai ,  Hiroki Arai ,  Toshio Nakanishi ,  Yoshiyuki Kikuchi ,  Ryo Miyama

IPC: C23C16/44 ,  C23C16/50

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

公开(公告)号：US10793946B1

公开(公告)日：2020-10-06

申请号：US16676017

申请日：2019-11-06

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/56

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US10014212B2

公开(公告)日：2018-07-03

申请号：US15622510

申请日：2017-06-14

Applicant: ASM IP HOLDING B.V.

Inventor： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76883 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.