公开(公告)号：US20240150894A1

公开(公告)日：2024-05-09

申请号：US18413533

申请日：2024-01-16

Applicant: ASM IP Holding B.V.

Inventor： Toshiharu Watarai ,  Hiroki Arai ,  Toshio Nakanishi ,  Yoshiyuki Kikuchi ,  Ryo Miyama

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01J37/3288

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

公开(公告)号：US20210071296A1

公开(公告)日：2021-03-11

申请号：US17010561

申请日：2020-09-02

Applicant: ASM IP Holding B.V.

Inventor： Toshiharu Watarai ,  Hiroki Arai ,  Toshio Nakanishi ,  Yoshiyuki Kikuchi ,  Ryo Miyama

IPC: C23C16/44 ,  C23C16/50

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

公开(公告)号：US09673092B2

公开(公告)日：2017-06-06

申请号：US14199946

申请日：2014-03-06

Applicant: ASM IP HOLDING B.V.

Inventor： Ryu Nakano ,  Noboru Takamure ,  Hiroki Arai

IPC: C23C16/00 ,  H01L21/00 ,  H01L21/768 ,  C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01L21/76879 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834

Abstract: A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.

公开(公告)号：US20140349033A1

公开(公告)日：2014-11-27

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/505

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。

公开(公告)号：US11761084B2

公开(公告)日：2023-09-19

申请号：US15368104

申请日：2016-12-02

Applicant: ASM IP Holding B.V.

Inventor： Hiroki Arai ,  Yukihiro Mori ,  Yuya Nonaka

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/505 ,  C23C16/452

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/505

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

公开(公告)号：US09365924B2

公开(公告)日：2016-06-14

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/515 ,  C23C16/04 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。