公开(公告)号：US20210082684A1

公开(公告)日：2021-03-18

申请号：US17101428

申请日：2020-11-23

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20200291518A1

公开(公告)日：2020-09-17

申请号：US16835933

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20200266097A1

公开(公告)日：2020-08-20

申请号：US16792544

申请日：2020-02-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US20190378709A1

公开(公告)日：2019-12-12

申请号：US16549434

申请日：2019-08-23

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/455

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

公开(公告)号：US20190279866A1

公开(公告)日：2019-09-12

申请号：US16254417

申请日：2019-01-22

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/30

Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

公开(公告)号：US20180330939A1

公开(公告)日：2018-11-15

申请号：US15911645

申请日：2018-03-05

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/32 ,  C23C16/30 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02112 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

公开(公告)号：US09922817B2

公开(公告)日：2018-03-20

申请号：US15399993

申请日：2017-01-06

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/32 ,  C23C16/30 ,  C23C16/04 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02112 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

公开(公告)号：US20180068844A1

公开(公告)日：2018-03-08

申请号：US15706435

申请日：2017-09-15

Applicant: ASM IP Holding B.V.

Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US09887082B1

公开(公告)日：2018-02-06

申请号：US15222715

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US09828674B2

公开(公告)日：2017-11-28

申请号：US15096511

申请日：2016-04-12

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/302 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.