公开(公告)号：US20180253015A1

公开(公告)日：2018-09-06

申请号：US15915674

申请日：2018-03-08

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/20 ,  G06F17/30 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US09454084B2

公开(公告)日：2016-09-27

申请号：US14403577

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Irina Lyulina ,  Franciscus Godefridus Casper Bijnen ,  Remi Daniel Marie Edart ,  Antoine Gaston Marie Kiers ,  Michael Kubis

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00 ,  G01B11/14

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：US20150205213A1

公开(公告)日：2015-07-23

申请号：US14420311

申请日：2013-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract translation: 一种变形图案识别方法，包括提供一个或多个变形图案，每个变形图案与可由处理装置引起的基板的变形相关联; 将第一图案转印到基板，所述第一图案至少包括N个对准标记，其中每个对准标记位于相应的预定标称位置; 处理基板; 通过将相应的标称位置与相应的测量位置进行比较来测量N个对准标记的位置并确定N个对准标记的对准标记位移; 将至少一个变形图案拟合到所测量的对准标记位移; 确定每个拟合变形模式的精度值，精度值代表相应拟合精度; 使用所确定的精度值，确定是否存在相关联的变形模式。