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公开(公告)号：US20150135146A1
公开(公告)日：2015-05-14
申请号：US14600337
申请日：2015-01-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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公开(公告)号：US09372957B2
公开(公告)日：2016-06-21
申请号：US14600337
申请日：2015-01-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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13.发明授权Harmonic resist model for use in a lithographic apparatus and a device manufacturing method 有权用于光刻设备的谐波抗蚀剂模型和器件制造方法公开(公告)号：US08942463B2
公开(公告)日：2015-01-27
申请号：US14224534
申请日：2014-03-25
Applicant: ASML Netherlands B.V.
Inventor： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
CPC classification number: G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
Abstract translation: 一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。
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公开(公告)号：US11042687B2
公开(公告)日：2021-06-22
申请号：US16821048
申请日：2020-03-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi Chen , Jun Ye , Yu Cao
IPC: G06F30/398 , G06F30/39 , G03F7/20 , G03F1/36
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
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Patent Agency Ranking
公开(公告)号：US10401732B2
公开(公告)日：2019-09-03
申请号：US15451328
申请日：2017-03-06
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC: G03F7/20
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
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公开(公告)号：US20190163866A1
公开(公告)日：2019-05-30
申请号：US16265367
申请日：2019-02-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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公开(公告)号：US20160357900A1
公开(公告)日：2016-12-08
申请号：US15174732
申请日：2016-06-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng LIU , Yu Cao , Luoqi Chen , Jun Ye
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009 , G06F17/5068
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 一种三维掩模模型，其提供具有亚波长特征的光刻掩模的三维效果比薄膜模型更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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公开(公告)号：US08893067B2
公开(公告)日：2014-11-18
申请号：US13971381
申请日：2013-08-20
Applicant: ASML Netherlands B.V.
Inventor： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
CPC classification number: G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Abstract translation: 在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。
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公开(公告)号：US20140195993A1
公开(公告)日：2014-07-10
申请号：US14081386
申请日：2013-11-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng LIU , Yu Cao , Luoqi Chen , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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