中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.033 seconds)

    Lithographic apparatus and method
    11.
    发明授权
    Lithographic apparatus and method 有权

    公开(公告)号：US10324379B2

    公开(公告)日：2019-06-18

    申请号：US15737400

    申请日：2016-06-07

    Applicant: ASML Netherlands B.V.

    Inventor： Cedric Marc Affentauschegg ,  Milenko Jovanovic ,  Richard Johannes Franciscus Van Haren ,  Reiner Maria Jungblut ,  Robertus Wilhelmus Van Der Heijden

    IPC: G03B27/68 ,  G03F7/20

    Abstract: A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.

    Method for determining a process window for a lithographic process, associated apparatuses and a computer program
    12.
    发明授权
    Method for determining a process window for a lithographic process, associated apparatuses and a computer program 有权

    公开(公告)号：US10133191B2

    公开(公告)日：2018-11-20

    申请号：US15325716

    申请日：2015-07-15

    Applicant: ASML Netherlands B.V.

    Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Paul Christiaan Hinnen ,  Reiner Maria Jungblut

    IPC: G03B27/42 ,  G03F7/20

    Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

    Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method
    17.
    发明授权
    Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method 有权

    公开(公告)号：US10274849B2

    公开(公告)日：2019-04-30

    申请号：US15743661

    申请日：2016-07-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Rene Marinus Gerardus Johan Queens ,  Erik Johan Koop ,  Reiner Maria Jungblut

    IPC: G03F9/00 ,  G03F7/20

    Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.

Patent Agency Ranking