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公开(公告)号：US20160061750A1
公开(公告)日：2016-03-03
申请号：US14838268
申请日：2015-08-27
Applicant: Vrije Universiteit Amsterdam , Universiteit van Amsterdam , Stichting voor Fundamenteel Onderzoek der Materie , ASML Netherlands B.V.
Inventor： Arie Jeffrey DEN BOEF , Simon Gijsbert Josephus MATHIJSSEN , Nitesh PANDEY , Stefan Michiel WITTE , Kjeld EIKEMA
IPC: G01N21/956 , G03F7/20 , G01B11/00
CPC classification number: G01N21/956 , G01B11/00 , G01N2201/12 , G03F7/70141 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03H1/0443 , G03H2001/0033 , G03H2001/0204 , G03H2001/0458
Abstract: Metrology targets are formed on a substrate (W) by a lithographic process. A target (T) comprising one or more grating structures is illuminated with spatially coherent radiation under different conditions. Radiation (650) diffracted by from said target area interferes with reference radiation (652) interferes with to form an interference pattern at an image detector (623). One or more images of said interference pattern are captured. From the captured image(s) and from knowledge of the reference radiation a complex field of the collected scattered radiation at the detector. A synthetic radiometric image (814) of radiation diffracted by each grating is calculated from the complex field. From the synthetic radiometric images (814, 814′) of opposite portions of a diffractions spectrum of the grating, a measure of asymmetry in the grating is obtained. Using suitable targets, overlay and other performance parameters of the lithographic process can be calculated from the measured asymmetry.
Abstract translation: 通过光刻工艺在基板（W）上形成计量目标。 包括一个或多个光栅结构的靶（T）在不同条件下被空间相干辐射照射。 从参考辐射（652）干涉的所述目标区域衍射的辐射（650）干扰以在图像检测器（623）处形成干涉图案。 捕获所述干涉图案的一个或多个图像。 从捕获的图像和参考辐射的知识中，在检测器处收集的散射辐射的复杂场。 从复场计算由每个光栅衍射的辐射的合成辐射图像（814）。 从光栅的衍射光谱的相对部分的合成辐射图像（814,814'）获得光栅中的不对称度。 使用合适的目标，可以从测量的不对称性计算光刻过程的覆盖层和其他性能参数。
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公开(公告)号：US20240004184A1
公开(公告)日：2024-01-04
申请号：US18037957
申请日：2021-11-08
Applicant: ASML Netherlands B.V.
Inventor： Luc Roger Simonne HASPESLAGH , Nitesh PANDEY , Ties Wouter VAN DER WOORD , Halil Gökay YEGEN , Sebastianus Adrianus GOORDEN , Alexis HUMBLET , Alexander Ludwig KLEIN , Jim Vincent OVERKAMP , Guilherme BRONDANI TORRI , Edgar Alberto OSORIO OLIVEROS
CPC classification number: G02B26/0858 , G03F7/70291 , G03F7/70116 , B81B7/02 , B81B2207/11 , B81B2207/015
Abstract: A micromirror array comprises a substrate, a plurality of mirrors for reflecting incident light and, for each mirror of the plurality of mirrors, at least one piezoelectric actuator for displacing the mirror, wherein the at least one piezoelectric actuator is connected to the substrate. The micromirror array further comprises one or more pillars connecting the mirror to the at least one piezoelectric actuator. Also disclosed is a method of forming such a micromirror array. The micromirror array may be used in a programmable illuminator. The programmable illuminator may be used in a lithographic apparatus and/or in an inspection and/or metrology apparatus.
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13.发明申请公开(公告)号：US20230062585A1
公开(公告)日：2023-03-02
申请号：US17856213
申请日：2022-07-01
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US20220334497A1
公开(公告)日：2022-10-20
申请号：US17636830
申请日：2020-07-15
Applicant: ASML Netherlands B.V.
Inventor： Nitesh PANDEY
IPC: G03F7/20
Abstract: Disclosed is a detection apparatus for a metrology device operable to measure a parameter of interest from scattered radiation having been scattered from a sample. The detection device comprises a detector comprising an array of pixels. The array of pixels comprises imaging pixels for detecting an image from which the parameter of interest is determined, and direction detecting pixels for detecting the angle of incidence of said scattered radiation on said detector.
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15.发明申请公开(公告)号：US20200249584A1
公开(公告)日：2020-08-06
申请号：US16856128
申请日：2020-04-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Robert John SOCHA , Arie Jeffrey DEN BOEF , Nitesh PANDEY
IPC: G03F7/20 , G01N21/88 , G01B11/27 , G01N21/956
Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.
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Patent Agency Ranking
公开(公告)号：US20200072599A1
公开(公告)日：2020-03-05
申请号：US16558457
申请日：2019-09-03
Applicant: ASML Netherlands B.V.
Inventor： Marinus Johannes Maria VAN DAM , Arie Jeffrey DEN BOEF , Nitesh PANDEY
Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source for generating illumination radiation; at least two illumination branches for illuminating the structure on the substrate, the illumination branches being configured to illuminate the structure from different angles; and a radiation switch configured to receive the illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.
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公开(公告)号：US20200057387A1
公开(公告)日：2020-02-20
申请号：US16540145
申请日：2019-08-14
Applicant: ASML Netherlands B.V.
Inventor： Nitesh PANDEY
IPC: G03F7/20 , G01N21/956 , G01N21/47
Abstract: A metrology apparatus for determining a parameter of interest of a structure formed by a lithographic process on a substrate, the metrology apparatus comprising: an illuminator for illuminating the structure; a lens for collecting at least a portion of radiation diffracted from the structure; and an image sensor for receiving and obtaining a recording of the collected diffracted radiation; wherein the illuminator comprises at least one optical fiber for illuminating the structure directly.
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公开(公告)号：US20190072859A1
公开(公告)日：2019-03-07
申请号：US16117614
申请日：2018-08-30
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan JAK , Martin EBERT , Arie Jeffrey DEN BOEF , Nitesh PANDEY
IPC: G03F7/20
Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters
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公开(公告)号：US20180246423A1
公开(公告)日：2018-08-30
申请号：US15754470
申请日：2016-08-22
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Nitesh PANDEY , Patricius Aloysius Jacobus TINNEMANS , Stefan Michiel WITTE , Kjeld Sijbrand Eduard EIKEMA
CPC classification number: G03F9/7003 , G01B11/272 , G03F9/7046 , G03F9/7088 , G03F9/7092 , G06T7/73
Abstract: A lithographic apparatus comprises comprise a substrate table constructed to hold a substrate; and a sensor configured to sense a position of an alignment mark provided onto the substrate held by the substrate table. The sensor comprises a source of radiation configured to illuminate the alignment mark with a radiation beam, a detector configured to detect the radiation beam, having interacted with the alignment mark, as an out of focus optical pattern, and a data processing system. The data processing system is configured to receive image data representing the out of focus optical pattern, and process the image data for determining alignment information, comprising applying a lensless imaging algorithm to the out of focus optical pattern.
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公开(公告)号：US20240012332A1
公开(公告)日：2024-01-11
申请号：US18038601
申请日：2021-11-12
Applicant: ASML Netherlands B.V.
Inventor： Luc Roger Simonne HASPESLAGH , Nitesh PANDEY , Ties Wouter VAN DER WOORD , Halil Gökay YEGEN , Guilherme BRONDANI TORRI , Sebastianus Adrianus GOORDEN , Alexander Ludwig KLEIN , Jim Vincent OVERKAMP , Edgar Alberto OSORIO OLIVEROS
CPC classification number: G03F7/70116 , G02B26/0858 , H02N2/108 , H02N2/009 , H10N30/50 , H10N30/05 , G03F7/70625 , G03F7/7015 , G03F7/706849
Abstract: A micromirror array comprises a substrate, a plurality of mirrors for reflecting incident light and, for each mirror of the plurality of mirrors, at least one multilayer piezoelectric actuator for displacing the mirror, wherein the at least one multilayer piezoelectric actuator is connected to the substrate, and wherein the at least one multilayer piezoelectric actuator comprises a plurality of piezoelectric layers of piezoelectric material interleaved with a plurality of electrode layers to form a stack of layers. Also disclosed is a method of forming such a micromirror array. The micromirror array may be used in a programmable illuminator. The programmable illuminator may be used in a lithographic apparatus and/or in an inspection and/or metrology apparatus.
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