公开(公告)号：US20230413454A1

公开(公告)日：2023-12-21

申请号：US18239723

申请日：2023-08-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Yung I YEH ,  Chang-Lin YEH ,  Sheng-Yu CHEN

IPC: H05K5/00 ,  H05K5/06 ,  H05K1/18 ,  H05K9/00 ,  H05K3/28 ,  H05K1/14

CPC classification number: H05K5/0017 ,  H05K5/065 ,  H05K1/181 ,  H05K9/0022 ,  H05K3/284 ,  H05K1/142 ,  H05K1/144 ,  H05K2203/1316 ,  H05K2201/10037 ,  H05K2201/10128 ,  H05K2201/10151 ,  H05K2201/041 ,  H05K2203/1327

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US20230187374A1

公开(公告)日：2023-06-15

申请号：US17548333

申请日：2021-12-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hui-Ping JIAN ,  Ming-Hung CHEN ,  Jia-Feng HO

IPC: H01L23/552 ,  H01L23/498 ,  H01L23/13 ,  H01L21/56 ,  H01Q1/22

CPC classification number: H01L23/552 ,  H01L23/49838 ,  H01L23/13 ,  H01L21/561 ,  H01Q1/2283 ,  H01L23/49822 ,  H01L23/3121

Abstract: An electronic device is disclosed. The electronic device includes a carrier having a first surface and a first lateral surface, an antenna adjacent to the first surface of the carrier, and a shielding layer covering a portion of the first lateral surface of the carrier. The shielding layer is configured to allow a gain of the antenna to be greater than 20 dB.

公开(公告)号：US20220102453A1

公开(公告)日：2022-03-31

申请号：US17549784

申请日：2021-12-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Sheng-Yu CHEN ,  Chang-Lin YEH ,  Yung-I YEH

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L27/11 ,  H01L25/16 ,  H01L27/15

Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

公开(公告)号：US20180358238A1

公开(公告)日：2018-12-13

申请号：US15619415

申请日：2017-06-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jin-Yuan LAI ,  Tang-Yuan CHEN ,  Ying-Xu LU ,  Dao-Long CHEN ,  Kwang-Lung LIN ,  Chih-Pin HUNG ,  Tse-Chuan CHOU ,  Ming-Hung CHEN ,  Chi-Hung PAN

IPC: H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L21/563 ,  H01L21/481 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83143 ,  H01L2224/83493 ,  H01L2224/83888 ,  H01L2224/83889 ,  H01L2924/01006

Abstract: The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

公开(公告)号：US20230335505A1

公开(公告)日：2023-10-19

申请号：US18212162

申请日：2023-06-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Zheng Wei WU

IPC: H01L23/552 ,  H01L21/768 ,  H01L21/78 ,  H01L21/50 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L21/768 ,  H01L21/78 ,  H01L21/50 ,  H01L24/14 ,  H01L2924/3025

Abstract: The present disclosure provides a semiconductor device package including a substrate having a first surface and a second surface opposite to the first surface, a first package body disposed on the first surface, and a conductive layer covering the first package body and the substrate. The conductive layer includes a first portion on the top surface of the first package body and a second portion on the lateral surface of the first package body and a sidewall of the substrate. The second portion of the conductive layer has a tapered shape. A method for manufacturing a semiconductor device package is also provided.

公开(公告)号：US20220399283A1

公开(公告)日：2022-12-15

申请号：US17346068

申请日：2021-06-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Zheng Wei WU

IPC: H01L23/552 ,  H01L21/768 ,  H01L23/00 ,  H01L21/78 ,  H01L21/50

Abstract: The present disclosure provides a semiconductor device package including a substrate having a first surface and a second surface opposite to the first surface, a first package body disposed on the first surface, and a conductive layer covering the first package body and the substrate. The conductive layer includes a first portion on the top surface of the first package body and a second portion on the lateral surface of the first package body and a sidewall of the substrate. The second portion of the conductive layer has a tapered shape. A method for manufacturing a semiconductor device package is also provided.

公开(公告)号：US20210193545A1

公开(公告)日：2021-06-24

申请号：US16725307

申请日：2019-12-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Sheng-Yu CHEN ,  Chang-Lin YEH ,  Ming-Hung CHEN

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L23/538 ,  H01L25/065 ,  H01L21/56

Abstract: A semiconductor package includes a substrate having a first side and a second side opposite to the first side, a first type semiconductor die disposed on the first side of the substrate, a first compound attached to the first side and encapsulating the first type semiconductor die, and a second compound attached to the second side, causing a stress with respect to the first type semiconductor die in the first compound. A method for manufacturing the semiconductor package described herein is also disclosed.

公开(公告)号：US20210066354A1

公开(公告)日：2021-03-04

申请号：US16557990

申请日：2019-08-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Yung I. YEH ,  Chang-Lin YEH ,  Sheng-Yu CHEN

IPC: H01L27/12 ,  H01L33/62 ,  H01L33/54 ,  H01L25/075

Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

公开(公告)号：US20210057398A1

公开(公告)日：2021-02-25

申请号：US16550111

申请日：2019-08-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung CHEN ,  Sheng-Yu CHEN ,  Chang-Lin YEH ,  Yung-I YEH

IPC: H01L25/16 ,  H01L27/12 ,  H01L23/00 ,  H01L33/56 ,  H01L23/48 ,  H01L23/528 ,  H01L33/62 ,  H01L23/522

Abstract: A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.