公开(公告)号：US06861643B2

公开(公告)日：2005-03-01

申请号：US10471741

申请日：2002-03-22

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： G21K5/04 ,  B01J19/08 ,  C23C14/32 ,  C23C16/50 ,  H01J37/317 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/306 ,  H05H3/00

CPC分类号： H01J37/32357 ,  H01J37/3178 ,  H01J37/32688

摘要： A neutral particle beam processing apparatus comprises a process gas inlet port (11) for introducing a process gas into a vacuum chamber (1), a plasma generating chamber (2) for generating positive ions and electrons from the introduced process gas, and a negative ion generating chamber (3) for attaching electrons generated in the plasma generating chamber to the residual gas to generate negative ions. The neutral particle beam processing apparatus further comprises an ion extracting portion (4) for extracting the positive ions or the negative ions and accelerating the positive ions or the negative ions in a predetermined direction, and a neutralizing chamber (5) for neutralizing an ion beam generated by the ion extracting portion (4) to generate a neutral particle beam. The neutral particle beam generated in the neutralizing chamber (5) is applied to a workpiece (X).

摘要翻译： 中性粒子束处理装置包括用于将处理气体引入真空室（1）的工艺气体入口（11），用于从引入的处理气体产生正离子和电子的等离子体产生室（2） 离子发生室（3），用于将在等离子体产生室中产生的电子附着到残留气体上以产生负离子。 中性粒子束处理装置还包括用于提取正离子或负离子并沿预定方向加速正离子或负离子的离子提取部分（4）和用于中和离子束的中和室（5） 由离子提取部分（4）产生的中性粒子束。 在中和室（5）中产生的中性粒子束被施加到工件（X）上。

公开(公告)号：US20100325913A1

公开(公告)日：2010-12-30

申请号：US12821456

申请日：2010-06-23

申请人： Xinming WANG ,  Kazuo Yamauchi ,  Akira Kodera ,  Tsukuru Suzuki ,  Yasushi Toma ,  Takayuki Saito ,  Hirokuni Hiyama

发明人： Xinming WANG ,  Kazuo Yamauchi ,  Akira Kodera ,  Tsukuru Suzuki ,  Yasushi Toma ,  Takayuki Saito ,  Hirokuni Hiyama

IPC分类号： F26B7/00

CPC分类号： F26B5/12 ,  F26B21/004 ,  H01L21/67028

摘要： A substrate processing method dose not use or only use the least possible amount of an organic solvent, and can quickly and completely remove a liquid from a wet substrate surface without allowing the liquid to remain on the substrate surface. The substrate processing method for drying a substrate surface which is wet with a liquid, includes: removing the liquid from the substrate surface and sucking the liquid together with its surrounding gas into a gas/liquid suction nozzle, disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle and the substrate parallel to each other; and blowing a dry gas from a dry gas supply nozzle, disposed opposite the substrate surface, toward that area of the substrate surface from which the liquid has been removed while relatively moving the dry gas supply nozzle and the substrate parallel to each other.

摘要翻译： 不使用或仅使用尽可能少量有机溶剂的底物处理方法，并且可以快速且完全地从湿底物表面除去液体，而不会使液体残留在基材表面上。 用于干燥被液体湿润的基板表面的基板处理方法包括：从基板表面去除液体并将其周围的气体与其一起吸入与基板表面相对设置的气/液吸嘴中，同时相对 使气体/液体吸嘴和基板彼此平行移动; 并且将相对于基板表面设置的干燥气体供给喷嘴的干燥气体吹向基板表面的已被除去液体的区域，同时使干燥气体供给喷嘴和基板彼此平行地相对移动。

公开(公告)号：US20060234499A1

公开(公告)日：2006-10-19

申请号：US11389178

申请日：2006-03-27

申请人： Akira Kodera ,  Hirokuni Hiyama ,  Akio Shibata ,  Tsutomu Nakada ,  Tsuyoshi Sahoda

发明人： Akira Kodera ,  Hirokuni Hiyama ,  Akio Shibata ,  Tsutomu Nakada ,  Tsuyoshi Sahoda

IPC分类号： H01L21/4763 ,  H01L21/76

CPC分类号： H01L21/2885 ,  B82Y30/00 ,  C23C14/04 ,  C23C14/225 ,  C25D5/022 ,  C25D7/123 ,  C25D17/001 ,  C25F1/00 ,  H01L21/76879

摘要： A substrate processing method forms a plated film which is thin and has a high flatness by covering the surface (outermost surface) of a substrate, excluding interior surfaces of recesses such as trenches, with a plating inhibiting material such as an SAM-forming molecular species. The substrate processing method comprises: preparing a substrate having recesses formed in a surface; attaching a plating inhibiting material for inhibiting plating to an outermost surface, which excludes interior surfaces of the recesses, of the substrate surface; and then carrying out electroplating of the surface of the substrate, thereby filling the recesses with a plated metal.

摘要翻译： 基板处理方法通过用诸如形成SAM的分子种类的镀覆抑制材料覆盖基板的表面（最外表面）（不包括沟槽等凹陷的内表面）形成薄并且具有高平坦度的电镀膜 。 基板处理方法包括：准备在表面形成的凹部的基板; 将用于抑制电镀的镀敷抑制材料附着到不包括所述凹部的内表面的最外表面上; 然后进行基板的表面的电镀，从而用电镀金属填充凹部。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20100081361A1

公开(公告)日：2010-04-01

申请号：US12566224

申请日：2009-09-24

申请人： Akira Fukuda ,  Yoshihiro Mochizuki ,  Yutaka Wada ,  Yoichi Shiokawa ,  Hirokuni Hiyama

发明人： Akira Fukuda ,  Yoshihiro Mochizuki ,  Yutaka Wada ,  Yoichi Shiokawa ,  Hirokuni Hiyama

IPC分类号： B24B53/02 ,  B24B1/00 ,  B24B53/12

CPC分类号： B24B53/017

摘要： A method of dressing a polishing member with a diamond dresser having diamond particles arranged on a surface thereof is provided. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the dressing conditions determined. The simulation includes calculation of the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

摘要翻译： 提供了一种用金刚石修整器修整抛光构件的方法，其具有布置在其表面上的金刚石颗粒。 该方法包括通过对抛光构件的表面上的金刚石修整器的滑动距离的分布进行模拟来确定修整条件，以及在确定的修整条件下用金刚石修整器修整抛光构件。 模拟包括根据推入抛光构件的金刚石颗粒的深度校正的滑动距离的计算。

公开(公告)号：US08655478B2

公开(公告)日：2014-02-18

申请号：US12566224

申请日：2009-09-24

申请人： Akira Fukuda ,  Yoshihiro Mochizuki ,  Yutaka Wada ,  Yoichi Shiokawa ,  Hirokuni Hiyama

发明人： Akira Fukuda ,  Yoshihiro Mochizuki ,  Yutaka Wada ,  Yoichi Shiokawa ,  Hirokuni Hiyama

IPC分类号： G06F19/00 ,  G05B11/01 ,  G05B19/18 ,  B24B49/00 ,  B24B1/00 ,  G01D1/00

CPC分类号： B24B53/017

摘要： A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

摘要翻译： 一种方法用抛光件与金刚石修整器连接，金刚石修整器具有布置在其表面上的金刚石颗粒。 该方法包括通过对抛光构件的表面上的金刚石修整器的滑动距离的分布的模拟进行模拟，以及在确定的修整条件下用金刚石修整器修整抛光构件来确定修整条件。 模拟包括计算根据推入抛光构件的金刚石颗粒的深度校正的滑动距离。

公开(公告)号：US07361076B2

公开(公告)日：2008-04-22

申请号：US11802353

申请日：2007-05-22

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

IPC分类号： B24B49/00 ,  G06F19/00

CPC分类号： B24B37/30 ,  B24B37/005 ,  B24B37/042 ,  B24B49/00

摘要： A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

摘要翻译： 抛光方法可以根据抛光轮廓随着时间的变化的数据，根据研磨部件的状态自动复位抛光条件，从而延长抛光部件的使用寿命，并且以更高的精度获得抛光表面的平坦度。 抛光方法包括以下步骤：通过顶环的每个按压部分独立地施加所需的压力在抛光对象上; 基于设定压力值估计抛光对象的抛光轮廓，并且计算推荐的抛光压力值，使得在某些抛光条件下抛光抛光对象的抛光轮廓与期望的抛光轮廓之间的差异变小; 并用推荐的抛光压力值抛光抛光对象。

公开(公告)号：US07150673B2

公开(公告)日：2006-12-19

申请号：US11176184

申请日：2005-07-08

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

IPC分类号： B24B49/00 ,  G06F19/00

CPC分类号： B24B37/30 ,  B24B37/005 ,  B24B37/042 ,  B24B49/00

摘要： A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

摘要翻译： 抛光方法可以根据抛光轮廓随着时间的变化的数据，根据研磨部件的状态自动复位抛光条件，从而延长抛光部件的使用寿命，并且以更高的精度获得抛光表面的平坦度。 抛光方法包括以下步骤：通过顶环的每个按压部分独立地施加所需的压力在抛光对象上; 基于设定压力值估计抛光对象的抛光轮廓，并且计算推荐的抛光压力值，使得在某些抛光条件下抛光抛光对象的抛光轮廓与期望的抛光轮廓之间的差异变小; 并用推荐的抛光压力值抛光抛光对象。

公开(公告)号：US20060009127A1

公开(公告)日：2006-01-12

申请号：US11176184

申请日：2005-07-08

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Manabu Tsujimura

IPC分类号： B24B49/00

CPC分类号： B24B37/30 ,  B24B37/005 ,  B24B37/042 ,  B24B49/00

摘要： A polishing method can automatically reset the polishing conditions according to the state of a polishing member based on data on the polishing profile changing with time, thereby extending the life of the polishing member and obtaining flatness of the polished surface with higher accuracy. The polishing method, including the steps of: independently applying a desired pressure by each of the pressing portions of the top ring on the polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that the difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

摘要翻译： 抛光方法可以根据抛光轮廓随着时间的变化的数据，根据研磨部件的状态自动复位研磨条件，从而延长抛光部件的使用寿命，并且以更高的精度获得抛光表面的平坦度。 抛光方法，包括以下步骤：通过顶环的每个按压部分独立地施加所需的压力在抛光对象上; 基于设定的压力值估计抛光对象的抛光轮廓，并计算推荐的抛光压力值，使得抛光对象在一定的抛光条件下抛光的抛光轮廓与期望的抛光轮廓之间的差异变小; 并用推荐的抛光压力值抛光抛光对象。

公开(公告)号：US20070232203A1

公开(公告)日：2007-10-04

申请号：US11730141

申请日：2007-03-29

申请人： Akira Fukuda ,  Hirokuni Hiyama ,  Manabu Tsujimura

发明人： Akira Fukuda ,  Hirokuni Hiyama ,  Manabu Tsujimura

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  B08B1/04 ,  B08B3/02 ,  H01L21/67219

摘要： A polishing method can prevent scratches in a polished surface of a polishing object, caused by foreign matter adhering to a surface of a polishing member, thus preventing the attendant lowering of the yield even when the polishing object is large-sized. The polishing method includes: specifying a foreign matter adhesion position or a foreign matter adhesion area in a surface of the polishing member; and intensively cleaning the foreign matter adhesion position or the foreign matter adhesion area in the surface of the polishing member.

摘要翻译： 抛光方法可以防止抛光对象的抛光表面由于抛光构件的表面附着的异物引起的划痕，从而即使在抛光对象大的情况下也能防止随之降低的成品率。 抛光方法包括：指定抛光构件的表面中的异物粘附位置或异物粘附区域; 并且强烈地清洗抛光部件的表面中的异物附着位置或异物粘附区域。