公开(公告)号：US20100325913A1

公开(公告)日：2010-12-30

申请号：US12821456

申请日：2010-06-23

申请人： Xinming WANG ,  Kazuo Yamauchi ,  Akira Kodera ,  Tsukuru Suzuki ,  Yasushi Toma ,  Takayuki Saito ,  Hirokuni Hiyama

发明人： Xinming WANG ,  Kazuo Yamauchi ,  Akira Kodera ,  Tsukuru Suzuki ,  Yasushi Toma ,  Takayuki Saito ,  Hirokuni Hiyama

IPC分类号： F26B7/00

CPC分类号： F26B5/12 ,  F26B21/004 ,  H01L21/67028

摘要： A substrate processing method dose not use or only use the least possible amount of an organic solvent, and can quickly and completely remove a liquid from a wet substrate surface without allowing the liquid to remain on the substrate surface. The substrate processing method for drying a substrate surface which is wet with a liquid, includes: removing the liquid from the substrate surface and sucking the liquid together with its surrounding gas into a gas/liquid suction nozzle, disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle and the substrate parallel to each other; and blowing a dry gas from a dry gas supply nozzle, disposed opposite the substrate surface, toward that area of the substrate surface from which the liquid has been removed while relatively moving the dry gas supply nozzle and the substrate parallel to each other.

摘要翻译： 不使用或仅使用尽可能少量有机溶剂的底物处理方法，并且可以快速且完全地从湿底物表面除去液体，而不会使液体残留在基材表面上。 用于干燥被液体湿润的基板表面的基板处理方法包括：从基板表面去除液体并将其周围的气体与其一起吸入与基板表面相对设置的气/液吸嘴中，同时相对 使气体/液体吸嘴和基板彼此平行移动; 并且将相对于基板表面设置的干燥气体供给喷嘴的干燥气体吹向基板表面的已被除去液体的区域，同时使干燥气体供给喷嘴和基板彼此平行地相对移动。

公开(公告)号：US20090078583A1

公开(公告)日：2009-03-26

申请号：US12007956

申请日：2008-01-17

申请人： Itsuki Kobata ,  Akira Kodera ,  Yasushi Toma ,  Tsukuru Suzuki ,  Takayuki Saito ,  Yuji Makita ,  Hirokuni Hiyama

发明人： Itsuki Kobata ,  Akira Kodera ,  Yasushi Toma ,  Tsukuru Suzuki ,  Takayuki Saito ,  Yuji Makita ,  Hirokuni Hiyama

IPC分类号： B23H5/06 ,  B23H11/00 ,  C25F3/16 ,  C25F7/00

CPC分类号： C25F3/00 ,  B23H5/08 ,  B24B37/013 ,  B24B49/105 ,  H01L21/32125

摘要： A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.

摘要翻译： 复合电解处理方法使得可以在导电膜上去除导电膜而不会使其在下面的阻挡膜上处于电绝缘状态，从而暴露阻挡膜。 电化学机械抛光方法包括：在连接到电源的一个极的第一电极和连接到电源的另一个极的第二电极之间施加电压，用于向抛光对象的导电膜供电; 将电解液体填充到研磨对象物的第一电极和导电膜之间的空间内; 并且将导电膜按压并摩擦抛光垫的抛光表面以使导电膜抛光，使得导电膜下面的阻挡膜从研磨对象的中心逐渐露出。

公开(公告)号：US20050155868A1

公开(公告)日：2005-07-21

申请号：US11035373

申请日：2005-01-14

申请人： Itsuki Kobata ,  Yutaka Wada ,  Hirokuni Hiyama ,  Takayuki Saito ,  Yasushi Toma ,  Tsukuru Suzuki ,  Akira Kodera

发明人： Itsuki Kobata ,  Yutaka Wada ,  Hirokuni Hiyama ,  Takayuki Saito ,  Yasushi Toma ,  Tsukuru Suzuki ,  Akira Kodera

IPC分类号： B23H5/08 ,  B24B37/04 ,  C25F1/00 ,  C25F3/00 ,  H01L21/321 ,  H01L21/768 ,  B23H3/00

CPC分类号： H01L21/32115 ,  B23H5/08 ,  B24B37/042 ,  B24B37/046 ,  C25F1/00 ,  C25F3/00 ,  H01L21/7684

摘要： An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation for a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with and close to the processing electrode at a distance of not more than 10 μm.

摘要翻译： 电解处理装置可以提高水的解离反应的效率，并且有效地进行电解处理，并且可以消除对于改变离子交换剂的操作的需要。 电解处理装置包括：处理电极和馈电电极; 液体供应部分，用于在工件和处理电极和馈电电极中的至少一个之间提供含有离子交换材料的液体; 用于在处理电极和馈电电极之间施加电压的电源; 以及用于相对于彼此移动所述工件和所述处理电极和所述馈送电极中的至少一个的驱动部分; 其中进行工件的电解处理，同时保持工件不超过10um的距离与处理电极接触并靠近处理电极。

公开(公告)号：US07527723B2

公开(公告)日：2009-05-05

申请号：US11035373

申请日：2005-01-14

申请人： Itsuki Kobata ,  Yutaka Wada ,  Hirokuni Hiyama ,  Takayuki Saito ,  Yasushi Toma ,  Tsukuru Suzuki ,  Akira Kodera

发明人： Itsuki Kobata ,  Yutaka Wada ,  Hirokuni Hiyama ,  Takayuki Saito ,  Yasushi Toma ,  Tsukuru Suzuki ,  Akira Kodera

IPC分类号： B23H7/36 ,  B23H1/10 ,  B23H3/10

CPC分类号： H01L21/32115 ,  B23H5/08 ,  B24B37/042 ,  B24B37/046 ,  C25F1/00 ,  C25F3/00 ,  H01L21/7684

摘要： An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation of a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with but close to the processing electrode at a distance of not more than 10 μm.

摘要翻译： 电解处理装置可以提高水的解离反应的效率，并且有效地进行电解处理，并且可以消除对离子交换剂的变化操作的需要。 电解处理装置包括：处理电极和馈电电极; 液体供应部分，用于在工件和处理电极和馈电电极中的至少一个之间提供含有离子交换材料的液体; 用于在处理电极和馈电电极之间施加电压的电源; 以及用于相对于彼此移动所述工件和所述处理电极和所述馈送电极中的至少一个的驱动部分; 其中，对工件的电解处理在不超过10um的距离保持工件不与处理电极接触而靠近处理电极的同时进行。

公开(公告)号：US20090095637A1

公开(公告)日：2009-04-16

申请号：US12285549

申请日：2008-10-08

申请人： Yasushi Toma ,  Akira Kodera ,  Hirokuni Hiyama

发明人： Yasushi Toma ,  Akira Kodera ,  Hirokuni Hiyama

IPC分类号： C25F3/00

CPC分类号： B23H5/08 ,  H01L21/32125

摘要： The present invention provides an electrochemical polishing method capable of increasing a polishing speed while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, when a voltage applied to a conductive film formed on the surface of a substrate is increased at a contact surface pressure of 0 between the surface of the substrate and a polishing pad, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a minimum voltage. In addition, when the voltage is increased at a contact surface pressure having a finite value, a voltage at a second change point B that allows the current density to be maintained constant after the decrease is referred to as a maximum voltage. In this case, the surface of the conductive film is polished while maintaining the voltage to be not lower than the minimum voltage and not higher than the maximum voltage. Further, the present invention provides an electrochemical polishing method capable of rapidly removing a conductive film in regions other than a contact plug or wiring line forming region while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, in a step of increasing a voltage, when the voltage is increased at a contact surface pressure of 0, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a threshold voltage, and the voltage is increased such that a voltage in a region in which a barrier film is exposed is higher than the threshold voltage.

摘要翻译： 本发明提供一种能够提高抛光速度同时防止过度抛光（如凹陷或侵蚀）的电化学抛光方法。 在电化学抛光方法中，当在基板表面上形成的导电膜上施加的电压在基板的表面与抛光垫之间的接触面压力为0时增加时，在第一变化点C处的电压为 允许电流密度在增加被称为最小电压之后开始降低。 此外，当电压在具有有限值的接触表面压力下增加时，允许电流密度在减小之后保持恒定的第二变化点B处的电压被称为最大电压。 在这种情况下，导电膜的表面被抛光，同时保持电压不低于最小电压并且不高于最大电压。 此外，本发明提供一种电化学抛光方法，其能够在防止诸如凹陷或侵蚀之类的过度抛光的同时，在接触插塞或布线形成区域以外的区域中快速除去导电膜。 在电化学抛光方法中，在增加电压的步骤中，当接触面压力为0时电压升高时，参照电流密度在增加后开始下降的第一变化点C处的电压 作为阈值电压，并且增加电压，使得暴露阻挡膜的区域中的电压高于阈值电压。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20070205112A1

公开(公告)日：2007-09-06

申请号：US11797480

申请日：2007-05-03

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C09G1/02 ,  C25F3/02 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/7684

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20060234499A1

公开(公告)日：2006-10-19

申请号：US11389178

申请日：2006-03-27

申请人： Akira Kodera ,  Hirokuni Hiyama ,  Akio Shibata ,  Tsutomu Nakada ,  Tsuyoshi Sahoda

发明人： Akira Kodera ,  Hirokuni Hiyama ,  Akio Shibata ,  Tsutomu Nakada ,  Tsuyoshi Sahoda

IPC分类号： H01L21/4763 ,  H01L21/76

CPC分类号： H01L21/2885 ,  B82Y30/00 ,  C23C14/04 ,  C23C14/225 ,  C25D5/022 ,  C25D7/123 ,  C25D17/001 ,  C25F1/00 ,  H01L21/76879

摘要： A substrate processing method forms a plated film which is thin and has a high flatness by covering the surface (outermost surface) of a substrate, excluding interior surfaces of recesses such as trenches, with a plating inhibiting material such as an SAM-forming molecular species. The substrate processing method comprises: preparing a substrate having recesses formed in a surface; attaching a plating inhibiting material for inhibiting plating to an outermost surface, which excludes interior surfaces of the recesses, of the substrate surface; and then carrying out electroplating of the surface of the substrate, thereby filling the recesses with a plated metal.

摘要翻译： 基板处理方法通过用诸如形成SAM的分子种类的镀覆抑制材料覆盖基板的表面（最外表面）（不包括沟槽等凹陷的内表面）形成薄并且具有高平坦度的电镀膜 。 基板处理方法包括：准备在表面形成的凹部的基板; 将用于抑制电镀的镀敷抑制材料附着到不包括所述凹部的内表面的最外表面上; 然后进行基板的表面的电镀，从而用电镀金属填充凹部。

公开(公告)号：US06858838B2

公开(公告)日：2005-02-22

申请号：US10451635

申请日：2002-03-22

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/32 ,  C23C16/50 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H3/02 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01J37/3178 ,  H01J37/32357 ,  H05H3/02

摘要： A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).

摘要翻译： 一种中性粒子束处理装置，包括：等离子体发生器，用于在等离子体中产生正离子和/或负离子;一对电极（5,6），其包括由等离子体发生器在其间产生的等离子体;以及电源（102），用于 在所述一对电极（5,6）之间施加电压。 一对电极（5,6）加速由等离子体发生器产生的正离子和/或负离子。 正离子和/或负离子被中和并转化成中性粒子，同时在一对电极（5,6）之间的等离子体中朝向工件（X）漂移。 加速的中性粒子通过电极（6）之一并施加到工件（X）上。

公开(公告)号：US06849857B2

公开(公告)日：2005-02-01

申请号：US10471610

申请日：2002-03-22

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/32 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/00

CPC分类号： H01J37/32137 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32357 ,  H01J2237/0827

摘要： A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.

摘要翻译： 光束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在真空室（3）中的第一电极（4） 第二电极（5），设置在真空室（3）中的第一电极（4）的上游。 光束处理装置还包括用于在第一电极（4）和第二电极（5）之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子（6）和负离子的电压施加单元。