公开(公告)号：US11736177B2

公开(公告)日：2023-08-22

申请号：US17544319

申请日：2021-12-07

Applicant: Akoustis Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/02 ,  H03H9/17

CPC classification number: H04B7/0814 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H3/02 ,  H04B1/006 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/7239 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/023 ,  H03H2003/025

Abstract: A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US11683021B2

公开(公告)日：2023-06-20

申请号：US16707885

申请日：2019-12-09

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H03H9/56 ,  H03H3/04 ,  H10N30/00

CPC classification number: H03H9/562 ,  H03H3/04 ,  H03H9/568 ,  H10N30/10516 ,  H03H2003/0428 ,  H03H2003/0435

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11621698B2

公开(公告)日：2023-04-04

申请号：US17860866

申请日：2022-07-08

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/17 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/54 ,  H03H3/02

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11611386B2

公开(公告)日：2023-03-21

申请号：US17841485

申请日：2022-06-15

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/17 ,  H03H9/02

Abstract: A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US11184079B2

公开(公告)日：2021-11-23

申请号：US16902953

申请日：2020-06-16

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/17 ,  H03H9/02

Abstract: A front end module (FEM) for a 5.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.5 GHz PA, a 5.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US10979022B2

公开(公告)日：2021-04-13

申请号：US16019267

申请日：2018-06-26

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David Aichele

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H01L41/187 ,  H01L41/047 ,  H01L27/20 ,  H01L41/29 ,  H03H9/00 ,  H03H9/58 ,  H03H3/02 ,  H01L41/332

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11646719B2

公开(公告)日：2023-05-09

申请号：US17886149

申请日：2022-08-11

Applicant: AKOUSTIS, INC.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC: H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

CPC classification number: H03H9/703 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/205 ,  H03H9/542 ,  H03H9/581 ,  H03H9/605 ,  H03H9/0523 ,  H03H9/0533 ,  H03H2003/023 ,  H03H2003/025

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

公开(公告)号：US20230112046A1

公开(公告)日：2023-04-13

申请号：US18064762

申请日：2022-12-12

Applicant: Akoustis, Inc.

Inventor： Zhiqiang BI ,  Dae Ho Kim ,  Pinal Patel ,  Kathy W. Davis ,  Rohan W. Houlden

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/56 ,  H03H9/17 ,  H03H9/13

Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.

公开(公告)号：US11616490B2

公开(公告)日：2023-03-28

申请号：US17858766

申请日：2022-07-06

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/10 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H3/007 ,  H03H9/13

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11456723B2

公开(公告)日：2022-09-27

申请号：US17558147

申请日：2021-12-21

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Michael D. Hodge ,  Rohan W. Houlden ,  Mary Winters ,  Ramakrishna Vetury ,  Ya Shen ,  David M. Aichele

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/13 ,  H03H9/205

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.