公开(公告)号：US10979024B2

公开(公告)日：2021-04-13

申请号：US16135402

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/60 ,  H03H9/54 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56 ,  H03H9/02 ,  H03H9/58 ,  H03H3/02 ,  H03H9/205

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20190020328A1

公开(公告)日：2019-01-17

申请号：US16135050

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/54 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H3/02 ,  H03F3/24 ,  H03F3/19 ,  H04B1/40

Abstract: A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US11689186B2

公开(公告)日：2023-06-27

申请号：US16828675

申请日：2020-03-24

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/54 ,  H03H9/00 ,  H03H3/02

CPC classification number: H03H9/605 ,  H03H3/02 ,  H03H9/0014 ,  H03H9/0095 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/542 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/568 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11418169B2

公开(公告)日：2022-08-16

申请号：US16514717

申请日：2019-07-17

Applicant: Akoustis, Inc.

Inventor： Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/10 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H3/007 ,  H03H9/13

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US10957688B2

公开(公告)日：2021-03-23

申请号：US16532333

申请日：2019-08-05

Applicant: Akoustis, Inc.

Inventor： Shawn R. Gibb ,  David M. Aichele ,  Ramakrishna Vetury ,  Mark D. Boomgarden ,  Jeffrey B. Shealy

IPC: H01L27/06 ,  H03H3/08 ,  H01L29/20 ,  H01L27/20 ,  H01L21/02 ,  H01L21/8252 ,  H01L29/417 ,  H01L29/80 ,  H03F3/19 ,  H03F3/21 ,  H03H9/46 ,  H04B1/44 ,  H01L41/18 ,  H01L41/314 ,  H01L41/37 ,  H03H9/02 ,  H01L29/778 ,  H03H3/02 ,  H01L23/66 ,  H03H9/05 ,  H03H9/10

Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

公开(公告)号：US11901880B2

公开(公告)日：2024-02-13

申请号：US17151552

申请日：2021-01-18

Applicant: Akoustis, Inc.

Inventor： Guillermo Moreno Granado ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/70 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/703 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

公开(公告)号：US11736177B2

公开(公告)日：2023-08-22

申请号：US17544319

申请日：2021-12-07

Applicant: Akoustis Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/02 ,  H03H9/17

CPC classification number: H04B7/0814 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H3/02 ,  H04B1/006 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/7239 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/023 ,  H03H2003/025

Abstract: A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US11683021B2

公开(公告)日：2023-06-20

申请号：US16707885

申请日：2019-12-09

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H03H9/56 ,  H03H3/04 ,  H10N30/00

CPC classification number: H03H9/562 ,  H03H3/04 ,  H03H9/568 ,  H10N30/10516 ,  H03H2003/0428 ,  H03H2003/0435

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11621698B2

公开(公告)日：2023-04-04

申请号：US17860866

申请日：2022-07-08

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/17 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/54 ,  H03H3/02

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11611386B2

公开(公告)日：2023-03-21

申请号：US17841485

申请日：2022-06-15

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/17 ,  H03H9/02

Abstract: A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.