公开(公告)号：US11677372B2

公开(公告)日：2023-06-13

申请号：US17230729

申请日：2021-04-14

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Saranswarup Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H10N30/87 ,  H10N30/88 ,  H10N30/00 ,  H10N30/85 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H03H9/02 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337

CPC classification number: H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11652469B2

公开(公告)日：2023-05-16

申请号：US16552999

申请日：2019-08-27

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Shawn R. Gibb ,  Rohan W. Houlden ,  Joel M. Morgan

IPC: H03H9/54 ,  H03H9/17 ,  H03H3/02 ,  H03H9/125 ,  H03H9/02

CPC classification number: H03H9/54 ,  H03H3/02 ,  H03H9/02007 ,  H03H9/125 ,  H03H9/17

Abstract: An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

公开(公告)号：US10979024B2

公开(公告)日：2021-04-13

申请号：US16135402

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/60 ,  H03H9/54 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56 ,  H03H9/02 ,  H03H9/58 ,  H03H3/02 ,  H03H9/205

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20190020328A1

公开(公告)日：2019-01-17

申请号：US16135050

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/54 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H3/02 ,  H03F3/24 ,  H03F3/19 ,  H04B1/40

Abstract: A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US20230327628A1

公开(公告)日：2023-10-12

申请号：US18331577

申请日：2023-06-08

Applicant: Akoustis, Inc.

Inventor： Dae Ho KIM ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H10N30/02 ,  H03H9/10 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/87 ,  H10N30/00 ,  H03H9/13 ,  H03H9/17 ,  H10N30/85 ,  H10N30/88 ,  H03H9/05 ,  H03H9/54 ,  H03H9/02

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11689186B2

公开(公告)日：2023-06-27

申请号：US16828675

申请日：2020-03-24

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/54 ,  H03H9/00 ,  H03H3/02

CPC classification number: H03H9/605 ,  H03H3/02 ,  H03H9/0014 ,  H03H9/0095 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/542 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/568 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11418169B2

公开(公告)日：2022-08-16

申请号：US16514717

申请日：2019-07-17

Applicant: Akoustis, Inc.

Inventor： Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/10 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H3/007 ,  H03H9/13

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US10985732B2

公开(公告)日：2021-04-20

申请号：US16020635

申请日：2018-06-27

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury

IPC: H03H9/60 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H3/02

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US10855247B2

公开(公告)日：2020-12-01

申请号：US16054929

申请日：2018-08-03

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Pinal Patel ,  Rohan W. Houlden ,  James Blanton Shealy ,  Jeffrey B. Shealy

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.

公开(公告)号：US11901880B2

公开(公告)日：2024-02-13

申请号：US17151552

申请日：2021-01-18

Applicant: Akoustis, Inc.

Inventor： Guillermo Moreno Granado ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/70 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/703 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.