Megasonic resonator for disk cleaning and method for use thereof
    11.
    发明授权
    Megasonic resonator for disk cleaning and method for use thereof 失效
    用于磁盘清洗的超声波谐振器及其使用方法

    公开(公告)号:US06460551B1

    公开(公告)日:2002-10-08

    申请号:US09430345

    申请日:1999-10-29

    IPC分类号: B08B312

    摘要: A Megasonic cleaning apparatus having at least one reflector (e.g., a parabolic or paraboloid reflector) positioned to collect otherwise wasted cleaning energy and redirect that energy to one or a plurality of positions on a wafer's edge is provided. A first embodiment comprises a complex parabolic reflector which has a width greater than that of the wafer and a preferred length approximately equal to the diameter of the wafer, and which is shaped to provide focal points which vary along the length of the parabolic reflector, such that energy striking the reflector at different points along the reflector's length is directed to a plurality of different points along the wafer's edge. A second embodiment comprises a simple parabolic reflector having a width greater than that of the wafer and a preferred length less than the diameter of the wafer, and which is provided to focus at a cord along the wafer's surface, effectively focusing cleaning energy on two points along the wafer's edge at any given time. Yet another embodiment of the invention comprises a paraboloid reflector having a width greater than that of the wafer and a preferred length which is substantially less than the diameter of the wafer and which is shaped to focus all collected energy to a single point on the wafer's edge. Multiple such reflectors may be positioned in the cleaning tank to optimize energy usage and wafer cleaning.

    摘要翻译: 提供了一种具有至少一个反射器(例如,抛物面或抛物面反射器)的超声波清洗装置,其被定位成收集另外浪费的清洁能量并将该能量重定向到晶片边缘上的一个或多个位置。 第一实施例包括复杂的抛物面反射器,其宽度大于晶片的宽度,并且优选的长度近似等于晶片的直径,并且其被成形为提供沿着抛物面反射器的长度变化的焦点, 沿着反射器长度的不同点撞击反射器的能量被引导到沿着晶片边缘的多个不同点。 第二实施例包括具有大于晶片宽度的宽度的简单抛物面反射器,并且具有小于晶片直径的优选长度,并且其设置成沿着晶片表面聚焦在绳索处,有效地将清洁能量聚焦在两点上 在任何给定的时间沿晶圆的边缘。 本发明的另一个实施例包括具有大于晶片宽度的宽度的抛物面反射器,其优选长度基本上小于晶片的直径,并且其被成形为将所有收集的能量聚焦到晶片边缘上的单个点 。 可以将多个这样的反射器定位在清洁槽中以优化能量使用和晶片清洁。

    Continuous cleaning megasonic tank with reduced duty cycle transducers
    12.
    发明授权
    Continuous cleaning megasonic tank with reduced duty cycle transducers 失效
    连续清洗超声波储罐,减少占空比传感器

    公开(公告)号:US06412499B1

    公开(公告)日:2002-07-02

    申请号:US09656294

    申请日:2000-09-06

    IPC分类号: B08B312

    摘要: A sonic tank for cleaning substrates is provided. The tank has two or more upwardly angled walls. Arrays of one or more transducers are positioned along at least two of the two or more angled walls. The transducer arrays are alternately energized maintaining nearly 100% substrate surface cleaning at any given time, and 50% duty cycle (or less) for each transducer array. The substrate supports are positioned such that nearly every point along the substrate's surface is contacted by energy from at least one transducer, and transducer opposing walls are positioned to avoid interfering reflections therefrom.

    摘要翻译: 提供用于清洁基材的声波槽。 坦克有两个或更多个向上成角度的墙壁。 一个或多个换能器的阵列沿两个或多个成角度的壁中的至少两个定位。 换能器阵列交替通电,在任何给定时间保持接近100%的基板表面清洁,每个换能器阵列的占空比(或更小)为50%。 定位基板支架,使得沿着基板表面的几乎每个点都与来自至少一个换能器的能量接触,并且换能器相对的壁被定位以避免其干涉反射。

    Method and apparatus for cleaning the edge of a thin disc
    13.
    发明授权
    Method and apparatus for cleaning the edge of a thin disc 失效
    用于清洁薄盘边缘的方法和装置

    公开(公告)号:US6119708A

    公开(公告)日:2000-09-19

    申请号:US191057

    申请日:1998-11-11

    IPC分类号: H01L21/00 B08B3/12

    CPC分类号: H01L21/67057 Y10S134/902

    摘要: A method and apparatus for cleaning wafer edges is provided. The inventive wafer cleaner employs a transducer equal in length to the diameter of a wafer to be cleaned, and positioned to direct sonic energy in line with the wafer's edge. Supporting and rotating mechanisms are positioned along the wafer's edge, outside of the transducer's high energy field, and preferably such that approximately 50 percent of the wafer is positioned between the wafer supports and the transducer. Therefore, minimal sonic energy is blocked from reaching the wafer's surface. The transducer dimensions relative to the wafer, and the positioning of the wafer supports relative to the transducer enable the system to achieve an approximately 50 percent edge cleaning duty cycle as the wafer is rotated.

    摘要翻译: 提供了一种用于清洁晶片边缘的方法和装置。 本发明的晶片清洁器采用与要清洁的晶片的直径相等的换能器,并定位成引导与晶片边缘一致的声能。 支撑和旋转机构沿着晶片的边缘定位在换能器的高能场外部,并且优选地使得大约50%的晶片位于晶片支架和换能器之间。 因此,最小的声能被阻止到达晶片的表面。 相对于晶片的换能器尺寸以及晶片支撑件相对于换能器的定位使得系统能够在晶片旋转时实现大约50%的边缘清洁占空比。

    Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus

    公开(公告)号:US06910942B1

    公开(公告)日:2005-06-28

    申请号:US08869328

    申请日:1997-06-05

    摘要: The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.

    Temperature control of a substrate during wet processes
    17.
    发明申请
    Temperature control of a substrate during wet processes 审中-公开
    湿法加工过程中基材的温度控制

    公开(公告)号:US20080041427A1

    公开(公告)日:2008-02-21

    申请号:US11974825

    申请日:2007-10-15

    IPC分类号: B08B3/00

    CPC分类号: H01L21/67248 H01L21/67109

    摘要: Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

    摘要翻译: 本发明的实施例提供了将液体施加到基底的背面以使基底达到液体温度的方法。 通过控制衬底的温度,可以将半导体处理液的温度保持在特定温度,或者可以增强或维持在半导体处理液中发生的反应类型,例如在使用相对少量液体的反应中 或使用昂贵的化学品。

    Network camera
    20.
    外观设计
    Network camera 有权
    网络摄像机

    公开(公告)号:USD661718S1

    公开(公告)日:2012-06-12

    申请号:US29401824

    申请日:2011-09-15

    申请人: Jianshe Tang

    设计人: Jianshe Tang