ACOUSTIC WAVE DEVICE INCLUDING A SURFACE WAVE FILTER AND A BULK WAVE FILTER, AND METHOD FOR MAKING SAME
    11.
    发明申请
    ACOUSTIC WAVE DEVICE INCLUDING A SURFACE WAVE FILTER AND A BULK WAVE FILTER, AND METHOD FOR MAKING SAME 有权
    包括表面波浪滤波器和大容量波形滤波器的声波装置及其制造方法

    公开(公告)号:US20120206216A1

    公开(公告)日:2012-08-16

    申请号:US13500614

    申请日:2010-10-04

    CPC classification number: H03H3/08 H03H3/02 H03H2003/0071 Y10T29/42

    Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

    Abstract translation: 一种声波装置,包括至少一个表面声波滤波器和一个体声波滤波器,该装置包括在包括第二压电材料的基板上,包括第一金属层和第一单晶压电材料层 其中,所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化,用于限定集成第一压电材料的体声滤波器,以及在第二区域处的第三金属化,用于限定整合第二压电材料的表面声波滤波器。

    Process for producing an acoustic device having a controlled-bandgap phononic crystal structure
    13.
    发明授权
    Process for producing an acoustic device having a controlled-bandgap phononic crystal structure 有权
    具有受控带隙声子晶体结构的声学装置的制造方法

    公开(公告)号:US08819904B2

    公开(公告)日:2014-09-02

    申请号:US13371192

    申请日:2012-02-10

    Abstract: A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.

    Abstract translation: 一种用于制造具有声子晶体结构的声学装置的方法,包括:在分布在第二介质的矩阵中的第一介质中产生的夹杂物,以阻挡声带在带隙频带内的传播,包括:限定所述夹杂物的几何参数, 具有与所述基体接触的至少一个非零第一壁角,与所述结构的平面的法线接触,所述几何参数包括所述第一壁角; 确定与所述带隙的频率位置的变化相关的功能,或者与所述带隙的宽度的变化相关的所述壁角; 根据预先确定的功能或功能确定所选择的频率位置和/或带隙的选定宽度的至少第一角度; 并且在由所述第二介质形成的所述基体中产生至少具有所述第一壁角的所述夹杂物。

    HETEROGENOUS ACOUSTIC STRUCTURE FORMED FROM A HOMOGENEOUS MATERIAL
    14.
    发明申请
    HETEROGENOUS ACOUSTIC STRUCTURE FORMED FROM A HOMOGENEOUS MATERIAL 有权
    由均质材料形成的异质声学结构

    公开(公告)号:US20140151151A1

    公开(公告)日:2014-06-05

    申请号:US13879562

    申请日:2011-10-06

    Abstract: An acoustic structure comprising comprises a layer of material having a first Young's modulus called the intrinsic modulus and a first density called the intrinsic density, characterized in that the layer comprises at least one first zone having said first Young's modulus and said first density and at least one second zone buried in the volume of said layer of material and having a second Young's modulus and/or a second density obtained by implanting and/or by diffusing atoms into the volume of said layer.

    Abstract translation: 声学结构包括包含称为固有模量的第一杨氏模量和称为固有密度的第一密度的材料层,其特征在于,所述层包括具有所述第一杨氏模量和所述第一密度的至少一个第一区域,并且至少 一个第二区域被埋在所述材料层的体积中,并且具有通过将原子注入和/或扩散到所述层的体积中而获得的第二杨氏模量和/或第二密度。

    Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding
    15.
    发明申请
    Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding 有权
    声波带通滤波器包括综合声导引

    公开(公告)号:US20130214878A1

    公开(公告)日:2013-08-22

    申请号:US13879598

    申请日:2011-10-11

    Abstract: An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.

    Abstract translation: 声波带通滤波器至少包括具有输出表面的输入第一声波谐振器和具有输入表面的输出第二声波谐振器,所述谐振器沿着设定方向彼此耦合,所述输入和输出表面基本上 所述输入和输出谐振器之间的至少一个第一声子晶体结构和/或所述谐振器周围的第二声子晶体结构,以便将由所述输入谐振器产生的声波沿着所述输入谐振器 设定方向,谐振器确保阻抗转换和/或模式转换。

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