公开(公告)号：US20150311003A1

公开(公告)日：2015-10-29

申请号：US14262188

申请日：2014-04-25

Applicant: Analog Devices Global

Inventor： Padraig L. Fitzgerald ,  Jo-ey Wong ,  Raymond C. Goggin ,  Bernard P. Stenson ,  Paul Lambkin ,  Mark Schirmer

IPC: H01H1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: H01H1/0036 ,  H01H59/0009 ,  H01H2001/0084 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

Abstract translation: 公开了几个提高MEMS开关的操作性能的特征，使得它们表现出改善的使用寿命和对开关的更好控制。

公开(公告)号：US20200328114A1

公开(公告)日：2020-10-15

申请号：US16914900

申请日：2020-06-29

Applicant: Analog Devices Global Unlimited Company

Inventor： Jan Kubik ,  Bernard P. Stenson ,  Michael Noel Morrissey

IPC: H01L21/768 ,  H01L49/02 ,  H01L23/522 ,  H01L21/288 ,  H01L21/033 ,  C23C18/16 ,  H01L23/532 ,  C25D5/02 ,  C25D7/12 ,  C25D5/10 ,  H05K3/24 ,  H05K3/18 ,  H05K3/42

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

公开(公告)号：US10699948B2

公开(公告)日：2020-06-30

申请号：US15810836

申请日：2017-11-13

Applicant: Analog Devices Global Unlimited Company

Inventor： Jan Kubik ,  Bernard P. Stenson ,  Michael Noel Morrissey

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/288 ,  H01L21/033 ,  C23C18/16 ,  H01L23/532 ,  H01L49/02 ,  C25D5/02 ,  C25D7/12 ,  C25D5/10 ,  H05K3/24 ,  H05K3/18 ,  H05K3/42 ,  H05K1/02

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

公开(公告)号：US20180130867A1

公开(公告)日：2018-05-10

申请号：US15347724

申请日：2016-11-09

Applicant: Analog Devices Global

Inventor： Paul Lambkin ,  Michal J. Osiak ,  Brian Anthony Moane ,  Stephen O'Brien ,  Laurence Brendan O'Sullivan ,  Patrick J. Murphy ,  Patrick M. McGuinness ,  Bernard P. Stenson

IPC: H01L49/02 ,  H01F27/28 ,  H01F41/04

CPC classification number: H01L28/10 ,  H01F27/2804 ,  H01F27/2885 ,  H01F27/323 ,  H01F41/041 ,  H01F41/042 ,  H01F41/122 ,  H01F2019/085 ,  H01F2027/2809 ,  H01F2027/2819 ,  H01L23/5227

Abstract: A magnetic isolator is described. The magnetic isolator may comprise a top conductive coil, a bottom conductive coil, and a dielectric layer separating the top conductive coil from the bottom conductive coil. The top conductive coil may comprise an outermost portion having multiple segments. The segments may be configured to reduce the peak electric field in a region of the dielectric layer near the outer edge of the top conductive coil. The top conductive coil may comprise a first lateral segment, and a second lateral segment that is laterally offset with respect to the first lateral segment. The first lateral segment may be closer to the center of the top conductive coil than the second lateral segment, and may be closer to the bottom conductive coil than the second lateral segment. The magnetic isolator may be formed using microfabrication techniques.

公开(公告)号：US20150311021A1

公开(公告)日：2015-10-29

申请号：US14278362

申请日：2014-05-15

Applicant: Analog Devices Global

Inventor： Check F. Lee ,  Raymond C. Goggin ,  Padraig L. Fitzgerald ,  Bernard P. Stenson ,  Mark Schirmer ,  Jo-ey Wong

IPC: H01H59/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B7/007 ,  B81C1/00341 ,  H01H1/0036 ,  H01H2001/0084

Abstract: A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.

Abstract translation: MEMS开关具有由具有顶表面的基底和形成在顶表面的至少一部分上的绝缘体形成的基底。 接合材料将盖固定到基部以形成内部室。 盖子有效地形成在内部室外部的基部的外部区域。 MEMS开关还具有可移动构件（在内部室中），其具有构件接触部分，内部接触件（也在内部腔室中）以及在基部的外部区域处的外部接触件。 可动构件的接触部分构造成交替地接触内部触点。 至少部分地在绝缘体层内的导体电连接内部触点和外部触点。 导体与将盖固定到基座的接合材料间隔开并与之电隔离。