摘要:
A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphous and notably dense. The oxide layer is a graded growth oxide layer including a composite of a first oxide portion formed at a relatively low temperature below the viscoelastic temperature of the oxide film and a second oxide portion formed at a relatively high temperature above the viscoelastic temperature of the oxide film. The process for forming the oxide layer includes thermally oxidizing at a first temperature below the viscoelastic temperature of the film, and slowly ramping up the temperature to a second temperature above the viscoelastic temperature of the film and heating at the second temperature. After the second, high temperature oxidation above the viscoelastic temperature, the structure is then slowly cooled under gradual, modulated cooling conditions.
摘要:
An aerated confection containing particulate material and method for making the same is disclosed. The method allows the incorporation of particulate material at a level of from 1 to 50.0% by weight based on the total weight of the aerated confection. The aerated confection preferably includes hexametaphosphate as a gel-stiffening agent.
摘要:
A method of manufacture for semiconductor electronic products and a circuit structure. A semiconductor material has a surface region and dopant is provided to a portion of the surface region. The portion of the surface region provided with the dopant is irradiated with sufficient energy to induce diffusion of the dopant from the portion of the surface region to another region of the semiconductor material. A method for manufacturing an electronic product with a semiconductor material having a surface and two spaced-apart regions along the surface for receiving dopant includes forming a field effect transistor gate structure is along the surface and over a third region of the surface between the two spaced-apart regions. Dopant is provided to the spaced-apart regions which are heated to a temperature at least 50 degrees C. higher than the peak temperature which results in the third region when the spaced-apart regions are heated. A circuit comprises a semiconductor material having a surface region for formation of devices, a field effect transistor gate structure formed on the surface region, the gate structure including a conductive layer and an amorphous insulative layer having a dielectric constant greater than five relative to free space. The insulative layer is formed between the conductive layer and the surface region. A source region is formed along the surface region and a drain region is also formed along the surface region. The gate structure, source region and drain region are configured to form an operable field effect transistor.
摘要:
A multi-piece food product (10) comprising a plurality of strands (12A-12K) that are extruded and aggregated to form an aesthetically pleasing food product is provided. A formulation used to make each of the strands (12A-12K) includes a mixture comprising at least 20% sweetener, at least 15% starchy material, and at least 1% fruit by weight based a total dry weight of the mixture to yield a starch-based confectionary food product. One process for forming the multi-piece food product (10) includes extruding a food stream from a slurry, dividing the food stream into three separate food streams (24A, 24B), injecting color, flavor, and ascorbic acid into the food streams (24A, 24B), conveying the food streams (24A, 24B) into a former (26) and extruding the strands (12A-12K) therefrom, forming the strands (12A, 12B) into an aggregate food mass (31), cooling the food mass (31), and cutting the food mass (31) into individual portions.