公开(公告)号：US10446712B2

公开(公告)日：2019-10-15

申请号：US16219897

申请日：2018-12-13

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20240250211A1

公开(公告)日：2024-07-25

申请号：US18408246

申请日：2024-01-09

Applicant: Apple Inc.

Inventor： Erin C. Young ,  Ling Zhang ,  David P. Bour

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/305

Abstract: Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer doped with a first dopant type (e.g. n-type) and step surface. A mesa pillar including an active layer protrudes from the step surface, and a regrown second cladding layer doped with a second dopant type (e.g. p-type) is in direct contact with and spans a bottom surface and sidewalls of the mesa pillar and the step surface.

公开(公告)号：US20200161496A1

公开(公告)日：2020-05-21

申请号：US16688754

申请日：2019-11-19

Applicant: Apple Inc.

Inventor： David P. Bour ,  Dmitry S. Sizov

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/06 ,  H01L33/14

Abstract: Light emitting diodes re described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.

公开(公告)号：US20190371964A1

公开(公告)日：2019-12-05

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US10714655B2

公开(公告)日：2020-07-14

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US10193013B2

公开(公告)日：2019-01-29

申请号：US15828081

申请日：2017-11-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US09484492B2

公开(公告)日：2016-11-01

申请号：US14853614

申请日：2015-09-14

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/38 ,  H01L33/30

CPC classification number: H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩展层和底部电流扩散层之间的有源层。

公开(公告)号：US20160315218A1

公开(公告)日：2016-10-27

申请号：US15199803

申请日：2016-06-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.