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公开(公告)号：US11054746B2
公开(公告)日：2021-07-06
申请号：US16557466
申请日：2019-08-30
Applicant: Applied Materials, Inc.
Abstract: Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.
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公开(公告)号：US10115572B2
公开(公告)日：2018-10-30
申请号：US15006966
申请日：2016-01-26
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Xiaoyi Chen , David Knick
Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.
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13.发明授权Methods for reducing line width roughness and/or critical dimension nonuniformity in a patterned photoresist layer 有权降低图案化光致抗蚀剂层中的线宽粗糙度和/或临界尺寸不均匀性的方法公开(公告)号：US09280051B2
公开(公告)日：2016-03-08
申请号：US14301835
申请日：2014-06-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Banqiu Wu , Ajay Kumar , Rao Yalamanchili , Omkaram Nalamasu
IPC: H01L21/302 , G03F7/26 , H01L21/308 , H01L21/027
CPC classification number: G03F7/26 , H01L21/0273 , H01L21/3086
Abstract: Methods for reducing line width roughness and/or critical dimension nonuniformity in a photoresist pattern are provided herein. In some embodiments, a method of reducing line width roughness along a sidewall of a patterned photoresist layer disposed atop a substrate includes: (a) depositing a first layer atop the sidewall of the patterned photoresist layer; (b) etching the first layer and the sidewall after depositing the first layer to reduce the line width roughness of the patterned photoresist layer. In some embodiments, (a)-(b) may be repeated until the line width roughness is substantially smooth.
Abstract translation: 本文提供了减少光致抗蚀剂图案中的线宽粗糙度和/或临界尺寸不均匀性的方法。 在一些实施例中，沿着设置在衬底顶部的图案化光致抗蚀剂层的侧壁减小线宽度粗糙度的方法包括：（a）在图案化光致抗蚀剂层的侧壁顶部沉积第一层; （b）在沉积第一层之后蚀刻第一层和侧壁以减小图案化光致抗蚀剂层的线宽粗糙度。 在一些实施例中，（a） - （b）可以重复，直到线宽粗糙度基本上平滑。
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公开(公告)号：US11803118B2
公开(公告)日：2023-10-31
申请号：US17228451
申请日：2021-04-12
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Khalid Makhamreh , Eliyahu Shlomo Dagan
CPC classification number: G03F1/82 , B08B7/0035 , B08B13/00 , H01J37/3244 , H01J37/32082 , H01J37/3299 , H01J37/32825 , H01J37/32972 , H01J2237/0206 , H01J2237/335
Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.
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公开(公告)号：US11644748B2
公开(公告)日：2023-05-09
申请号：US17226775
申请日：2021-04-09
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Khalid Makhamreh , Eliyahu Shlomo Dagan
CPC classification number: G03F1/82 , G03F7/168 , G03F7/70825 , G03F7/70841 , G03F7/70875
Abstract: Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.
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Patent Agency Ranking
公开(公告)号：US20220083034A1
公开(公告)日：2022-03-17
申请号：US17532923
申请日：2021-11-22
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu
IPC: G05B19/418
Abstract: One or more first parameters associated with an electronic device manufacturing process are monitored. An artificial neural network associated with the one or more first parameters is determined. One or more second parameters are determined using the artificial neural network. The one or more first parameters are adjusted using the one or more second parameters.
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公开(公告)号：US11114350B2
公开(公告)日：2021-09-07
申请号：US16453773
申请日：2019-06-26
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Khalid Makhamreh , Eli Dagan
IPC: H01L21/02 , H01L21/66 , H01L21/311
Abstract: Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.
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公开(公告)号：US10933624B2
公开(公告)日：2021-03-02
申请号：US16885469
申请日：2020-05-28
Applicant: Applied Materials, Inc.
IPC: B41C1/10 , H01L21/027 , G03F7/20
Abstract: Embodiments described herein generally relate to an apparatus and methods for removing a glue residue from a photomask. The glue residue may be exposed when a pellicle is removed from the photomask. Before a new pellicle can be adhered to the photomask, the glue residue may be removed. To remove the glue residue, a laser beam may be projected through a lens and focused on a surface of the glue residue. The glue residue may be ablated from the photomask by the laser beam.
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公开(公告)号：US10802392B2
公开(公告)日：2020-10-13
申请号：US16510855
申请日：2019-07-12
Applicant: Applied Materials, Inc.
Abstract: Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.
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公开(公告)号：US09754765B2
公开(公告)日：2017-09-05
申请号：US14042490
申请日：2013-09-30
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Saravjeet Singh , Amitabh Sabharwal , Ajay Kumar
IPC: H01J37/32
CPC classification number: H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32577 , Y10T156/10
Abstract: An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
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