公开(公告)号：US20230100659A1

公开(公告)日：2023-03-30

申请号：US18077087

申请日：2022-12-07

Applicant: Applied Materials, Inc.

Inventor： Joseph Van GOMPEL ,  James L'HEUREUX

IPC: H01J37/32

Abstract: One or more embodiments described herein relate to abatement systems for reducing Br2 and Cl2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br2. Br2 and Cl2 are corrosive and toxic. However, the addition of H2O in the plasma reactor quenches the Br2 and Cl2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

公开(公告)号：US20170027049A1

公开(公告)日：2017-01-26

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  H01L21/67 ,  H01J37/32

CPC classification number: H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract translation: 本文公开的实施例包括用于减轻半导体工艺中产生的化合物的等离子体源，减排系统和真空处理系统。 在一个实施例中，等离子体源包括介电管和围绕管的线圈天线。 线圈天线​​包括多个匝，并且至少一匝短路。 选择性地短路一圈或多圈线圈天线有助于降低线圈天线的电感，从而允许更高的功率供应到覆盖更多处理量的线圈天线。 提供给线圈天线的较高功率和较大的处理量导致改进的DRE。

公开(公告)号：US20220199380A1

公开(公告)日：2022-06-23

申请号：US17610675

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： James L'HEUREUX ,  Ryan Thomas DOWNEY

IPC: H01J37/32 ,  B01D45/16 ,  B01D51/06

Abstract: Embodiments disclosed herein include a particle collection trap for an abatement system for abating compounds produced in semiconductor processes. The particle collection trap includes a device for producing spiral gas flow in the particle collection trap. The spiral gas flow causes particles, which are heavier than the gas, to travel to the outside diameter of the flow path where the gas velocity is slower and to drop out of the gas stream. The device may be a spiral member coupled to a hollow tube or a rolled member having an inner portion coupled to a hollow tube. The particle collection trap increases the accumulation rate of particles in the gas stream without reducing the velocity of the gas flow.

公开(公告)号：US20200032392A1

公开(公告)日：2020-01-30

申请号：US16591460

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： James L'HEUREUX ,  Hari K. PONNEKANTI

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/505 ,  C23C16/511 ,  C23C16/52

Abstract: Implementations described herein generally relate to methods for removing one or more processing by-products found in deposition systems, such as in vacuum forelines of vapor deposition systems. More specifically, implementations of the present disclosure relate to methods of reducing the buildup of hydrogen in systems. In one implementation, a method of processing a substrate in a deposition chamber is provided. The method comprises depositing a layer on the substrate, wherein hydrogen-containing by-products are produced in a vacuum foreline fluidly coupled with the deposition chamber during the depositing process. The method further comprises flowing an oxidizing agent gas into the vacuum foreline to react with at least a portion of the hydrogen-containing by-products in the foreline.

公开(公告)号：US20180337027A1

公开(公告)日：2018-11-22

申请号：US15961482

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： James L'HEUREUX ,  Ryan T. DOWNEY ,  David Muquing HOU ,  Yan ROZENZON

IPC: H01J37/32 ,  H01L21/67 ,  B01D53/32

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.

公开(公告)号：US20180166306A1

公开(公告)日：2018-06-14

申请号：US15826063

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： David Muquing HOU ,  James L'HEUREUX ,  Zheng YUAN

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/24 ,  C23C14/48

CPC classification number: H01L21/67253 ,  C23C14/48 ,  C23C14/564 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/67173 ,  H01L21/67288 ,  Y02C20/30

Abstract: Embodiments of the present disclosure generally relate to abatement for semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to techniques for foreline solids formation quantification. In one embodiment, a system includes one or more quartz crystal microbalance (QCM) sensors located between a processing chamber and a facility exhaust. The one or more QCM sensors provide real-time measurement of the amount of solids generated in the system without having to shut down a pump located between the processing chamber and the facility exhaust. In addition, information provided by the QCM sensors can be used to control the flow of reagents used to abate compounds in the effluent exiting the processing chamber in order to reduce solid formation.

公开(公告)号：US20180135171A1

公开(公告)日：2018-05-17

申请号：US15806600

申请日：2017-11-08

Applicant: Applied Materials, Inc.

Inventor： James L'HEUREUX ,  Hari K. PONNEKANTI

IPC: C23C16/455 ,  C23C16/511 ,  C23C16/505 ,  C23C16/52

CPC classification number: C23C16/455 ,  C23C16/401 ,  C23C16/4405 ,  C23C16/505 ,  C23C16/511 ,  C23C16/52

Abstract: Implementations described herein generally relate to methods for removing one or more processing by-products found in deposition systems, such as in vacuum forelines of vapor deposition systems. More specifically, implementations of the present disclosure relate to methods of reducing the buildup of hydrogen in systems. In one implementation, a method of processing a substrate in a deposition chamber is provided. The method comprises depositing a layer on the substrate, wherein hydrogen-containing by-products are produced in a vacuum foreline fluidly coupled with the deposition chamber during the depositing process. The method further comprises flowing an oxidizing agent gas into the vacuum foreline to react with at least a portion of the hydrogen-containing by-products in the foreline.