HIGH THROUGHPUT POLISHING MODULES AND MODULAR POLISHING SYSTEMS

    公开(公告)号:US20210323119A1

    公开(公告)日:2021-10-21

    申请号:US17076315

    申请日:2020-10-21

    Abstract: Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

    OFFSET HEAD-SPINDLE FOR CHEMICAL MECHANICAL POLISHING

    公开(公告)号:US20200156206A1

    公开(公告)日:2020-05-21

    申请号:US16690062

    申请日:2019-11-20

    Abstract: A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.

    COMPLIANT POLISHING PAD AND POLISHING MODULE
    14.
    发明申请
    COMPLIANT POLISHING PAD AND POLISHING MODULE 有权
    合适的抛光垫和抛光模块

    公开(公告)号:US20160005618A1

    公开(公告)日:2016-01-07

    申请号:US14476991

    申请日:2014-09-04

    CPC classification number: B24B41/047 B24B37/10

    Abstract: A polishing device includes a housing, a flexible base coupled to the housing, and a contact region disposed on a first side of the flexible base, wherein the flexible base expands and contracts based on pressure contained within the housing and a second side of the flexible base to form a contact area on the first side that is less than a surface area of the flexible base.

    Abstract translation: 抛光装置包括壳体,联接到壳体的柔性基座和设置在柔性基座的第一侧面上的接触区域,其中柔性基座基于容纳在壳体内的压力而膨胀和收缩,并且柔性基座的第二侧 以在第一侧上形成小于柔性基底的表面积的接触区域。

    MULTI HEAD PAD CONDITIONING APPARATUS AND METHOD OF USE

    公开(公告)号:US20240383099A1

    公开(公告)日:2024-11-21

    申请号:US18318880

    申请日:2023-05-17

    Abstract: Embodiments of the present disclosure provided herein include an apparatus and method for pad conditioning in a chemical mechanical polishing system. The apparatus includes a first conditioning head coupleable to a first pad conditioning disk disposed at a first head distance from the first conditioning head. The apparatus further includes a second a third conditioning head configured similarly to the first conditioning head. The apparatus includes a controller configured to receive sensor readings, determine whether the sensor readings are outside of a predetermined range, and adjust the first, second, and third head distances. A method of conditioning a polishing pad includes receiving sensor readings from at least one pad thickness sensor, determining if the sensor readings are outside of a predetermined range, and, upon determining that the sensor readings are outside of the predetermined range, adjusting a head distance of a conditioning head based on the sensor readings.

    POLISHING HEAD WITH LOCAL WAFER PRESSURE
    17.
    发明公开

    公开(公告)号:US20240253179A1

    公开(公告)日:2024-08-01

    申请号:US18630886

    申请日:2024-04-09

    CPC classification number: B24B37/32 B24B37/005 B24B37/04

    Abstract: A polishing system includes a carriage arm having an actuator disposed on a lower surface thereof. The actuator includes a piston and a roller coupled to a distal end of the piston. The polishing system includes a polishing pad and a substrate carrier suspended from the carriage arm and configured to apply a pressure between a substrate and the polishing pad. The substrate carrier includes a housing, a retaining ring, and a membrane. The substrate carrier includes an upper load ring disposed in the housing. The roller of the actuator is configured to contact the upper load ring during relative rotation between the substrate carrier and the carriage arm. The actuator is configured to apply a load to a portion of the upper load ring thereby altering the pressure applied between the substrate and the polishing pad.

    MULTIPLE DISK PAD CONDITIONER
    18.
    发明公开

    公开(公告)号:US20240051081A1

    公开(公告)日:2024-02-15

    申请号:US17888007

    申请日:2022-08-15

    CPC classification number: B24B37/20

    Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

    SUBSTRATE POLISHING APPARATUS WITH CONTACT EXTENSION OR ADJUSTABLE STOP

    公开(公告)号:US20220111482A1

    公开(公告)日:2022-04-14

    申请号:US17495679

    申请日:2021-10-06

    Abstract: An apparatus for chemical mechanical polishing (CMP) of a substrate is described herein. The apparatus includes an extension disposed between a retaining ring and a chucking membrane. The extension is disposed radially outward from the edge of the substrate and is configured to contact the retaining ring during substrate processing. The extension provides a repeatable and controlled point of contact between the retaining ring and the chucking membrane. The extension may have multiple configurations, such that the contact point between the retaining ring and the chucking membrane is set at a pre-determined location or such that the contact point is moveable by an adjustable stop.

    CHEMICAL MECHANICAL POLISHER WITH HUB ARMS MOUNTED
    20.
    发明申请
    CHEMICAL MECHANICAL POLISHER WITH HUB ARMS MOUNTED 有权
    化学机械抛光机与HUB ARMS安装

    公开(公告)号:US20150105005A1

    公开(公告)日:2015-04-16

    申请号:US14510195

    申请日:2014-10-09

    CPC classification number: B24B37/10 B24B37/345

    Abstract: A chemical mechanical polishing system is provided. The chemical mechanical polishing system includes a platen, a load cup, a hub, a first polishing arm cantilevered from the hub and rotatable around the centerline of the hub between the platen and load cup, and a second polishing arm cantilevered from the hub and rotatable around the centerline of the hub between the platen and load cup the second arm rotatable independently from the hub.

    Abstract translation: 提供化学机械抛光系统。 所述化学机械抛光系统包括压板,负载杯,轮毂,从所述轮毂悬臂并能围绕所述压板和所述负载杯之间的所述轮毂的中心线旋转的第一抛光臂,以及从所述轮毂悬臂的第二抛光臂, 围绕压板和负载杯之间的毂的中心线,第二臂可独立于轮毂旋转。

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