公开(公告)号：US20240153774A1

公开(公告)日：2024-05-09

申请号：US17980900

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Christopher R. Hatem ,  Michael Noel Kennedy ,  Joseph C. Olson ,  Edmund G. Seebauer

IPC: H01L21/225 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2251 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/26513 ,  H01J2237/332 ,  H01J2237/335

Abstract: A method of doping a substrate may include exposing a substrate surface of the semiconductor substrate to a plasma clean, performing a deposition of a dopant layer on the substrate surface using a plasma source, after the plasma clean, the dopant layer comprising a dopant element; and exposing the substrate to an implant process when the dopant layer is disposed on the substrate surface, wherein the implant process introduces an ion species comprising the dopant element into the substrate, wherein the substrate is maintained under vacuum over a process duration spanning the plasma clean, the deposition of the dopant layer, and the implant process, and wherein at least a portion of the dopant layer is implanted into the substrate during the implant process.

公开(公告)号：US11852853B2

公开(公告)日：2023-12-26

申请号：US17147338

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Maurice Emerson Peploski ,  Joseph C. Olson ,  Thomas James Soldi

IPC: G02B5/18 ,  H01J37/305

CPC classification number: G02B5/1857 ,  H01J37/3056

Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕ1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

公开(公告)号：US11766744B2

公开(公告)日：2023-09-26

申请号：US17650814

申请日：2022-02-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: G02B5/18 ,  B23K26/34 ,  C04B41/00 ,  G02B6/34 ,  G03F7/00 ,  B23K26/364 ,  F21V8/00 ,  G06F3/01

CPC classification number: B23K26/34 ,  B23K26/364 ,  C04B41/0036 ,  G02B5/1819 ,  G02B5/1857 ,  G02B6/34 ,  G03F7/0005 ,  G02B6/0016 ,  G02B6/0065 ,  G06F3/011

Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

公开(公告)号：US11640898B2

公开(公告)日：2023-05-02

申请号：US16717400

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/147

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11557987B2

公开(公告)日：2023-01-17

申请号：US17455312

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Wayne McMillan ,  Visweswaren Sivaramakrishnan ,  Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Naamah Argaman

IPC: H02N13/00 ,  C23F1/00 ,  G02B6/34 ,  H01L21/683 ,  C23C16/453 ,  H05H1/24 ,  H01L21/265

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

公开(公告)号：US11554445B2

公开(公告)日：2023-01-17

申请号：US16694580

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson

IPC: B23K26/34 ,  C04B41/00 ,  G02B5/18 ,  G03F7/00 ,  B23K26/364 ,  G02B6/34 ,  F21V8/00 ,  G06F3/01

Abstract: Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions.

公开(公告)号：US11456205B2

公开(公告)日：2022-09-27

申请号：US16871751

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen ,  Daniel Distaso ,  Ryan Boas

IPC: H01L21/768 ,  G03F7/20

Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

公开(公告)号：US20220238295A1

公开(公告)日：2022-07-28

申请号：US17722874

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Thomas Soldi ,  Rutger Meyer Timmerman Thijssen ,  Maurice Emerson Peploski

IPC: H01J37/08 ,  H01J29/07 ,  H01J37/20 ,  H01J37/305

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

公开(公告)号：US11380578B2

公开(公告)日：2022-07-05

申请号：US16656798

申请日：2019-10-18

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Joseph C. Olson ,  Morgan Evans

IPC: H01L21/768 ,  H01L21/308 ,  H01J37/304 ,  H01J37/317

Abstract: Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.

公开(公告)号：US10763072B1

公开(公告)日：2020-09-01

申请号：US16354638

申请日：2019-03-15

Applicant: APPLIED Materials, Inc.

Inventor： Frank Sinclair ,  Costel Biloiu ,  Joseph C. Olson ,  Alexandre Likhanskii

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.