公开(公告)号：US10529585B2

公开(公告)日：2020-01-07

申请号：US15995698

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick ,  Kurtis Leschkies

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/38 ,  C23C16/32 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

公开(公告)号：US10886140B2

公开(公告)日：2021-01-05

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20200035505A1

公开(公告)日：2020-01-30

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US10483102B2

公开(公告)日：2019-11-19

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  C23C16/04 ,  C23C16/02

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190228982A1

公开(公告)日：2019-07-25

申请号：US16246711

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Abhijit Basu Mallick ,  Shishi Jiang ,  Yong Wu ,  Kurtis Leschkies ,  Srinivas Gandikota

IPC: H01L21/3105 ,  C23C16/56 ,  H01L21/02

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.

公开(公告)号：US20180294166A1

公开(公告)日：2018-10-11

申请号：US15946107

申请日：2018-04-05

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/3105 ,  H01L21/02

Abstract: Methods for seam-less gapfill comprising forming a flowable film by PECVD, annealing the flowable film with a reactive anneal to form an annealed film and curing the flowable film or annealed film to solidify the film. The flowable film can be formed using a higher order silane and plasma. The reactive anneal may use a silane or higher order silane. A UV cure, or other cure, can be used to solidify the flowable film or the annealed film.

公开(公告)号：US12054827B2

公开(公告)日：2024-08-06

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Suresh Chand Seth ,  Srinivas D. Nemani

IPC: C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/32055 ,  H01L21/321 ,  H01J2237/3321

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US11578409B2

公开(公告)日：2023-02-14

申请号：US16895579

申请日：2020-06-08

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/30 ,  C23C16/24 ,  C23C16/34 ,  C23C16/32 ,  C23C16/36 ,  H01L21/285

Abstract: PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.

公开(公告)号：US11515170B2

公开(公告)日：2022-11-29

申请号：US17137637

申请日：2020-12-30

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US11227797B2

公开(公告)日：2022-01-18

申请号：US16675385

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Kurtis Leschkies ,  Pramit Manna ,  Abhijit Mallick

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.