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Patent Agency Ranking
公开(公告)号：US20240114800A1
公开(公告)日：2024-04-04
申请号：US18272438
申请日：2021-01-18
Applicant: Applied Materials, Inc.
Inventor： Vijay Bhan Sharma , Yuan Xue , Abhijeet Laxman Sangle , Bharatwaj Ramakrishnan , Yi Yang , Suresh Chand Seth , Ankur Anant Kadam
IPC: H10N30/853 , C04B35/493 , C04B35/499 , C23C14/02 , C23C14/08 , C23C14/34 , C23C14/58 , C30B23/02 , C30B23/08 , C30B29/30 , C30B29/32 , C30B33/02 , H01J37/34 , H10N30/00 , H10N30/04 , H10N30/076 , H10N30/079
CPC classification number: H10N30/8548 , C04B35/493 , C04B35/499 , C23C14/024 , C23C14/082 , C23C14/083 , C23C14/3407 , C23C14/5806 , C30B23/025 , C30B23/08 , C30B29/30 , C30B29/32 , C30B33/02 , H01J37/3426 , H10N30/04 , H10N30/076 , H10N30/079 , H10N30/10516 , C04B2235/3234 , C04B2235/3255 , H01J2237/332
Abstract: A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.
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公开(公告)号：US12054827B2
公开(公告)日：2024-08-06
申请号：US17041403
申请日：2019-04-01
Applicant: Applied Materials, Inc.
Inventor： Shishi Jiang , Pramit Manna , Abhijit Basu Mallick , Suresh Chand Seth , Srinivas D. Nemani
IPC: C23C16/505 , C23C16/24 , C23C16/56 , H01J37/32 , H01L21/3205 , H01L21/321
CPC classification number: C23C16/505 , C23C16/24 , C23C16/56 , H01J37/32091 , H01J37/3244 , H01J37/32724 , H01L21/32055 , H01L21/321 , H01J2237/3321
Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.
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公开(公告)号：US11598000B2
公开(公告)日：2023-03-07
申请号：US16137797
申请日：2018-09-21
Applicant: Applied Materials, Inc.
Inventor： Ranga Rao Arnepalli , Colin Costano Neikirk , Yuriy Melnik , Suresh Chand Seth , Pravin K. Narwankar , Sukti Chatterjee , Lance A. Scudder
Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.
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公开(公告)号：US20220325398A1
公开(公告)日：2022-10-13
申请号：US17229492
申请日：2021-04-13
Applicant: Applied Materials, Inc.
Inventor： Vijay Bhan Sharma , Abhijeet Laxman Sangle , Ankur Anant Kadam , Suresh Chand Seth , Richa Pandey , Dinesh Kabra , Valipe Ramgopal Rao
Abstract: A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH2]2+MX3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX3 compound. Methods of forming a piezoelectric device are also disclosed.
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公开(公告)号：US20220320417A1
公开(公告)日：2022-10-06
申请号：US17220136
申请日：2021-04-01
Applicant: Applied Materials, Inc.
Inventor： Abhijeet Laxman Sangle , Suresh Chand Seth , Vijay Bhan Sharma , Bharatwaj Ramakrishnan , Ankur Anant Kadam
IPC: H01L41/316 , H01L41/18 , H01L41/29
Abstract: Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.
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