公开(公告)号：US10424464B2

公开(公告)日：2019-09-24

申请号：US15581611

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

公开(公告)号：US20170229287A1

公开(公告)日：2017-08-10

申请号：US15581611

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/311

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

公开(公告)号：US09349605B1

公开(公告)日：2016-05-24

申请号：US14821542

申请日：2015-08-07

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Abstract translation: 本技术的实施例可以包括蚀刻衬底的方法。 该方法可以包括在等离子体区域中击打等离子体放电。 该方法还可以包括将含氟前体流入等离子体区域以形成等离子体流出物。 等离子体流出物可能流入混合区域。 该方法可以进一步包括将含氢和氧的化合物引入混合区域，而不首先使含氢氧化合物进入等离子体区域。 此外，该方法可以包括使含氢和氧的化合物与混合区域中的等离子体流出物反应以形成反应产物。 反应产物可以流过分隔件中的多个开口到基底处理区域。 该方法还可以包括在衬底处理区域中用反应产物蚀刻衬底。

公开(公告)号：US20150247231A1

公开(公告)日：2015-09-03

申请号：US14195402

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： Son T. Nguyen ,  Dmitry Lubomirsky

IPC: C23C14/04 ,  H01L21/687 ,  H01L21/67 ,  C23C14/16 ,  C23C14/34

CPC classification number: C23C14/042 ,  C23C14/185 ,  H01L21/67103 ,  H01L21/68785

Abstract: A method of forming thin film heater traces on a wafer chuck includes positioning a pattern, that forms openings corresponding to a desired layout of the heater traces, in proximity to the wafer chuck. The method includes sputtering a material toward the pattern and the wafer chuck such that a portion of the material passes through the openings and adheres to the wafer chuck to form the heater traces. A method of forming thin film heater traces on a wafer chuck includes sputtering a blanket layer of a material onto the wafer chuck, and patterning a photoresist layer utilizing photolithography. The photoresist layer covers the blanket layer in an intended layout of the heater traces, exposing the blanket layer in areas that are not part of the intended layout. The method removes the areas that are not part of the intended layout by etching, and removes the photoresist layer.

Abstract translation: 在晶片卡盘上形成薄膜加热器迹线的方法包括在晶片卡盘附近定位形成与加热器迹线的期望布局相对应的开口的图案。 该方法包括将材料溅射到图案和晶片卡盘，使得材料的一部分通过开口并粘附到晶片卡盘以形成加热器迹线。 在晶片卡盘上形成薄膜加热器迹线的方法包括将材料的覆盖层溅射到晶片卡盘上，以及利用光刻图案化光致抗蚀剂层。 光致抗蚀剂层以加热器迹线的预期布局覆盖橡皮布层，将橡皮布层暴露在不是预期布局的一部分的区域中。 该方法通过蚀刻除去不是预期布局的一部分的区域，并除去光致抗蚀剂层。