公开(公告)号：USD446506S1

公开(公告)日：2001-08-14

申请号：US29114735

申请日：1999-11-30

申请人： Avi Tepman

设计人： Avi Tepman

公开(公告)号：US6136163A

公开(公告)日：2000-10-24

申请号：US263126

申请日：1999-03-05

申请人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

发明人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

IPC分类号： B65G49/07 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  C25D17/00 ,  C25B9/00 ,  C25B15/00

CPC分类号： H01L21/6723 ,  C25D17/001 ,  H01L21/67098

摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.

摘要翻译： 本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元， 以及流体连接到所述一个或多个电处理单元的电解质供应。 本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。 优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

公开(公告)号：US6071372A

公开(公告)日：2000-06-06

申请号：US869798

申请日：1997-06-05

申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32477 ,  H01J37/321

摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

公开(公告)号：US5883017A

公开(公告)日：1999-03-16

申请号：US916161

申请日：1997-09-02

申请人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

发明人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

IPC分类号： H01L21/302 ,  B65G49/07 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67751 ,  Y10S414/135 ,  Y10S414/139 ,  Y10S438/905 ,  Y10S438/907 ,  Y10S438/908

摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

摘要翻译： 用于半导体晶片的处理室由多个隔室形成。 提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。 晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。 当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。 因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

公开(公告)号：US5846332A

公开(公告)日：1998-12-08

申请号：US680724

申请日：1996-07-12

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。 放置在基座上的优选也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。 尽管其热隔离，外围环电连接到基座以防止电弧。 泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

公开(公告)号：US5730801A

公开(公告)日：1998-03-24

申请号：US296043

申请日：1994-08-23

申请人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

发明人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

IPC分类号： H01L21/302 ,  B65G49/07 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/677 ,  C23C16/00

CPC分类号： H01L21/67748 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67751 ,  Y10S414/135 ,  Y10S414/139 ,  Y10S438/905 ,  Y10S438/907 ,  Y10S438/908

摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

摘要翻译： 用于半导体晶片的处理室由多个隔室形成。 提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。 晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。 当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。 因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

公开(公告)号：US5566744A

公开(公告)日：1996-10-22

申请号：US570803

申请日：1995-12-12

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/683

CPC分类号： H01L21/67109

摘要： The apparatus and method of the present invention provide even and repeatable heat transfer to and from essentially the entire substrate used in semiconductor processing. In particular, the support platform upon which the substrate sets during processing is designed to permit heat transfer to the very edge of the substrate so that substrate space unavailable for processing is minimized.The support platform comprises a substrate-facing surface 211 including at least one fluid supply source 214; a continuous, platform-based fluid flow barrier 212; and at least one opening 234 through substrate-facing surface 211 through which a substrate lift finger 221 can be operated. Fluid flow barrier 212 contacts the back side (non-processed side) of the substrate at a location very near the exterior edge of the substrate.To prevent heat transfer fluid from flowing downward through the lift finger openings 234, a lift finger sealing cover 222 is employed. Sealing cover 222 is preferably self-aligning, to ensure formation of a continuous lift finger fluid flow barrier 228 surrounding lift finger opening 234.

摘要翻译： 本发明的装置和方法为半导体加工中使用的整个基板提供均匀且可重复的热传递。 特别地，在处理期间衬底设置的支撑平台被设计成允许热传递到衬底的非常边缘，使得不可用于处理的衬底空间被最小化。 支撑平台包括一个包括至少一个流体供应源214的面向对象的表面211; 连续的基于平台的流体流动阻挡件212; 以及通过基板对向表面211的至少一个开口234，通过该开口234可以操作基板升降指221。 流体流动阻挡件212在非常靠近衬底的外部边缘的位置处接触衬底的背面（未处理侧）。 为了防止传热流体向下流过提升指开口234，采用提升指密封盖222。 密封盖222优选地是自对准的，以确保形成围绕提升指开口234的连续提升手指流体流动屏障228。

公开(公告)号：US5401319A

公开(公告)日：1995-03-28

申请号：US936433

申请日：1992-08-27

申请人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

发明人： Thomas Banholzer ,  Dan Marohl ,  Avi Tepman ,  Donald M. Mintz

IPC分类号： H01L21/302 ,  B24C1/00 ,  C23C14/56 ,  H01J37/16 ,  H01J37/32 ,  H01L21/02 ,  B08B3/12 ,  B08B3/10 ,  B24B1/00

CPC分类号： H01J37/32458 ,  B24C1/00 ,  C23C14/564 ,  H01J37/16 ,  Y10S156/914

摘要： Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part to be cleaned ultrasonically in order to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

摘要翻译： 处理包括铝盖和石英门和屏蔽件的真空室的可更换部件被处理以清洁和粗糙其表面，以增加在所述室中的衬底处理期间沉积在其上的材料的粘附，从而减少设备的停机时间。 部件可以进行化学清洗，冲洗以除去化学品并在第一步骤中干燥; 进行珠粒喷砂以粗糙化部件的表面并改善沉积材料上的附着力; 在接下来的步骤中，要清洁的部件超声波清除所有松散的颗粒; 在最后一步中，在包装或使用该部件之前，清洗和干燥部件以除去水分。 一种新颖的单件加工铝盖具有从第一表面安装到室的门的延伸壁和所述第一表面的覆盖部分，当盖关闭时密封地接合门。

公开(公告)号：US5362372A

公开(公告)日：1994-11-08

申请号：US75258

申请日：1993-06-11

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203

CPC分类号： H01J37/32862 ,  C23C14/34 ,  H01J37/34 ,  H01J37/3447 ,  H01J2237/3327

摘要： A self cleaning collimator is provided which avoids a buildup of deposited material such that the collimator does not become clogged, deposition rates remain constant and flakes of deposited material are not formed. The collimator is formed of a dielectric material. The collimator and the target are physically mounted in contact with one another. During a deposition process, a portion of the deposited material will unavoidably also be deposited onto the walls of the passages through the collimator. Eventually, the buildup of such deposited material will provide an electrical path from the deposited material to the target. When this occurs, the electrical path will allow the material deposited on the walls of the passages through the collimator to act as a portion of the target. This material will then be depleted as it is deposited onto the semiconductor wafer 112.

摘要翻译： 提供了自清洁准直器，其避免了沉积材料的积累，使得准直器不会被堵塞，沉积速率保持恒定，并且不形成沉积材料的薄片。 准直器由电介质材料形成。 准直器和目标物体上彼此接触。 在沉积过程中，沉积材料的一部分将不可避免地也通过准直器沉积到通道的壁上。 最终，这种沉积材料的积累将提供从沉积材料到靶材的电路径。 当这种情况发生时，电路将允许通过准直器的沉积在通道的壁上的材料充当靶的一部分。 然后当该材料沉积到半导体晶片112上时，该材料将被耗尽。

公开(公告)号：US07550066B2

公开(公告)日：2009-06-23

申请号：US10888383

申请日：2004-07-09

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/34

CPC分类号： C23C14/3407

摘要： A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention.

摘要翻译： 一种溅射靶，特别是用于将目标材料溅射沉积到大矩形板上，其中多个目标瓦片以二维非矩形阵列结合到背板上，使得瓦片在不超过三个 从而在粘合期间将瓷砖锁定以防止过度的未对准。 矩形瓦片可以以交错的行或人字形或锯齿形图案布置。 六角形和三角形瓦片也提供了本发明的许多优点。