Abstract:
Embodiments of the present disclosure relate to an array substrate, a method for manufacturing the same, and a display panel thereof. The array substrate includes a transparent substrate having a first side surface and a second side surface opposite to the first side surface, and a light reflecting structure located on the first side surface of the transparent substrate, wherein the second side surface of the transparent substrate has a coarse region, an orthographic projection of the coarse region on the transparent substrate coinciding with an orthographic projection of the light reflecting structure on the transparent substrate.
Abstract:
The present disclosure provides a manufacturing method of thin film transistor, a thin film transistor and a display substrate. The manufacturing method comprises sequentially forming a polysilicon pattern layer and a protective pattern layer on a substrate; etching the protective pattern layer with a first etching gas, so as to obtain a protective pattern; simultaneously etching the protective pattern and the polysilicon pattern layer with a second etching gas by using the protective pattern as a mask, so as to obtain a polysilicon pattern and a residual protective pattern, the protective pattern being etched with the second etching gas at a rate no less than that for etching the polysilicon pattern layer; and forming an amorphous silicon pattern, which is in contact with etched sides of the polysilicon pattern, exposes a part of the residual protective pattern, and forms an active layer together with the polysilicon pattern.
Abstract:
A preparation method of a conductive via hole structure, a preparation method of an array substrate and a preparation method of a display device, the preparation method of the array substrate includes: forming a first metal layer (01) including the first metal structure (01a), forming a non-metallic film including a first part corresponding to the first metal structure (01a) and an organic insulating film (40′) in sequence; patterning the organic insulating film (40′) to form a first organic insulating layer via hole (41) corresponding to the first part; then baking to form an organic insulating layer (40); and then, removing the first part of the non-metallic film to form a non-metallic layer and expose the part of the surface (011) of the first metal structure (01a). This method can avoid the metal structure from being seriously oxidized.
Abstract:
A thin film transistor and a fabrication method thereof, an array substrate, and a display device are provided. The fabrication method comprises: forming a gate line on a base substrate; performing a treatment for alleviating a bulge of the gate line on the base substrate with the gate line formed thereon, and forming a gate insulating layer on the base substrate after the treatment. Thereby, a problem of bulge of the gate line occurring in a fabrication process of the thin film transistor can be alleviated or even avoided, so that resistance of the gate line is uniform, which further renders uniform display of the display device, and improves display quality of the display device.
Abstract:
Embodiments of the invention provide an array substrate, a manufacturing method thereof and a display device. The array substrate comprises: a base substrate; a gate line and a gate electrode formed on the base substrate; a gate insulating layer formed on the gate line and the gate electrode; a source electrode, a drain electrode and a pixel electrode formed on the gate insulating layer, wherein the pixel electrode is directly connected to the drain electrode; and an active layer formed on the gate insulating layer, the source electrode and the drain electrode.
Abstract:
A touch substrate, a manufacturing method thereof and a display device. The touch substrate according to the embodiment of the present disclosure includes: a basal substrate; a touch electrode layer disposed on the basal substrate, the touch electrode layer comprising a plurality of touch electrodes; and a filler disposed between any two adjacent touch electrodes of the touch electrode layer. An orthographic projection of the filler on the basal substrate is at least partially located between orthographic projections of two adjacent touch electrodes on the basal substrate. A refractive index of the filler is n3, a refractive index of the basal substrate is n1, a refractive index of the touch electrode is n2, and |n2−n3|
Abstract:
The present disclosure provides an array substrate and a manufacturing method of the array substrate, a display device. An array substrate comprises: a pixel array, each pixel in the pixel array having a pixel electrode; a transistor array, each transistor in the transistor array having a source electrode; and a connection electrode for electrically connecting the pixel electrode to a corresponding source electrode.
Abstract:
The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
Abstract:
A display panel, a manufacturing method thereof and a display device are provided. The display panel includes an array substrate and an opposing substrate which are disposed opposite to each other; the array substrate includes a first base substrate and a source electrode, a drain electrode and an active layer which are disposed on the first base substrate, and a passivation layer disposed on the source electrode, the drain electrode and the active layer; the opposing substrate includes a second base substrate and a gate electrode disposed on the second base substrate; the active layer includes a source electrode region, a drain electrode region and a channel region between the source electrode region and the drain electrode region, the gate electrode is disposed opposite to and spaced apart from the passivation layer at a position where the channel region is located.
Abstract:
The present invention relates to a display substrate and a method for fabricating the same, a display panel and a display device. The display substrate comprises a plurality of pixels, each of which has a display region, a non-display region being between the plurality of pixels, and the display substrate further comprises a protection metal layer covering the non-display region. In the display substrate, the protection metal layer covers the non-display region of the display substrate so as to shield the structures of the thin-film transistors, signal lines and the like on the display substrate, and thus the stability of structure of the display panel as well as the high resolution of the display panel and excellent display effect thereof can be ensured, and, in the meantime, the procedure of fabrication process is simplified, the manufacture efficiency is improved, and the cost for manufacturing is reduced.