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公开(公告)号：US11088283B2
公开(公告)日：2021-08-10
申请号：US16330990
申请日：2018-08-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guoying Wang , Zhen Song , Hongda Sun
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/41
Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.
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公开(公告)号：US10833104B2
公开(公告)日：2020-11-10
申请号：US15745773
申请日：2017-07-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingang Fang , Youngsun Song , Hongda Sun , Wei Li
IPC: H01L27/12 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a fabricating method of an array substrate, comprising: forming a pattern comprising a light shading member; spreading an organic material solution; solidifying the organic material solution, to form a buffer layer; forming a pattern of an active layer on the buffer layer, wherein a position of the active layer corresponds to a position of the light shading member; and forming a gate pattern, where the gate pattern is located on the active layer and is insulated from the active layer. Correspondingly, the present disclosure further provides an array substrate and a display device.
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公开(公告)号：US20200235138A1
公开(公告)日：2020-07-23
申请号：US16649854
申请日：2019-10-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongda Sun , Fengjuan Liu , Dini Xie , Pengfei Gu
IPC: H01L27/12 , H01L29/786 , H01L23/552
Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.
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公开(公告)号：US10090368B2
公开(公告)日：2018-10-02
申请号：US14785830
申请日：2015-02-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingang Fang , Longbao Xin , Hongda Sun
Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.
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公开(公告)号：US20180240911A1
公开(公告)日：2018-08-23
申请号：US15955349
申请日：2018-04-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hongda Sun , Young Suk Song
CPC classification number: H01L29/78633 , H01L21/707 , H01L27/1225 , H01L27/1251 , H01L29/7869 , H01L33/005 , H01L33/44 , H01L51/52 , H01L51/56
Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10038097B2
公开(公告)日：2018-07-31
申请号：US15504030
申请日：2016-08-16
Applicant: Boe Technology Group Co., Ltd.
Inventor： Jingang Fang , Youngsuk Song , Hongda Sun , Wei Li
IPC: H01L29/786 , H01L51/00 , H01L27/32 , H01L27/12 , H01L51/56
CPC classification number: H01L29/78627 , H01L27/1214 , H01L27/1248 , H01L27/1288 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L27/3276 , H01L27/3295 , H01L51/0011 , H01L51/0017 , H01L51/56
Abstract: A light emitting diode display substrate, a method of manufacturing the same, and a display device are provided. The method includes: forming a planarization layer and a photoresist layer in sequence on a substrate on which a thin film transistor is formed, a light sensitivity of the planarization layer being higher than a light sensitivity of the photoresist layer; etching the planarization layer and the photoresist layer simultaneously, such that a pixel defining pattern is formed through a removed portion of the photoresist layer, and an anode via pattern is formed at a position of the planarization layer corresponding to the pixel defining pattern; forming an anode pattern layer on the substrate on which the above steps were performed, wherein the anode pattern layer comprises a plurality of anodes, such that the planarization layer located at edges of the anode via pattern covers edges of the anodes.
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17.发明授权公开(公告)号：US09717143B2
公开(公告)日：2017-07-25
申请号：US14353389
申请日：2013-12-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Meili Wang , Hongda Sun , Fengjuan Liu
CPC classification number: H05K1/028 , H01L21/4846 , H01L21/6835 , H01L23/00 , H01L25/105 , H01L51/003 , H01L51/5228 , H01L2221/68318 , H01L2221/6835 , H01L2221/68381 , H01L2251/5338 , H01L2924/0002 , H05K1/0393 , H05K3/022 , H05K3/4644 , H05K2201/0195 , H05K2203/0235 , H05K2203/068 , H01L2924/00
Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.
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18.发明申请PIXEL UNIT AND METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权像素单元及其制造方法，阵列基板和显示设备公开(公告)号：US20150129881A1
公开(公告)日：2015-05-14
申请号：US14361700
申请日：2013-11-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiangyong Kong , Dongfang Wang , Jun Cheng , Hongda Sun
IPC: H01L27/12
CPC classification number: H01L27/1248 , G02F1/136227 , H01L27/1244 , H01L27/1288
Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.
Abstract translation: 本发明提供一种包括薄膜晶体管和像素电极的像素单元，薄膜晶体管包括栅极，源极和漏极，并且像素电极通过通孔电连接到漏极。 通孔的上端面与像素电极连接，通孔的下端面与漏极连接。 通孔是台阶状的孔，通孔的上端面的面积大于通孔的下端面的面积。 本发明还提供一种制造像素单元的方法，包括该像素单元的阵列基板以及包括该阵列基板的显示装置。
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公开(公告)号：US11640095B2
公开(公告)日：2023-05-02
申请号：US16908547
申请日：2020-06-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fengjuan Liu , Hongda Sun
Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.
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20.发明授权公开(公告)号：US10396209B2
公开(公告)日：2019-08-27
申请号：US15955349
申请日：2018-04-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hongda Sun , Youngsuk Song
Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.
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