Array substrate, display apparatus, and method of fabricating array substrate

    公开(公告)号:US12183748B2

    公开(公告)日:2024-12-31

    申请号:US18518526

    申请日:2023-11-23

    Abstract: An array substrate including a display area having a plurality of subpixels is provided. The plurality of subpixels includes a plurality of first subpixels in a display-bonding sub-area and a plurality of second subpixels in a regular display sub-area. The array substrate includes a plurality of thin film transistors on a first side of the base substrate and respectively in the plurality of subpixels. A respective one of the plurality of first subpixels includes a bonding pad on a second side of a base substrate; a lead line electrically connecting a respective one of a plurality of thin film transistors to the bonding pad; and a via extending through the base substrate. The lead line is unexposed in the array substrate. The lead line extends from the first side to the second side of the base substrate through the via, to connect to the bonding pad.

    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230049038A1

    公开(公告)日:2023-02-16

    申请号:US17975894

    申请日:2022-10-28

    Abstract: An array substrate and a manufacturing method thereof, a display device and a manufacturing method thereof are provided, which belong to the technical field of display. The array substrate includes: an interposer substrate, a fan-out region and a thin-film transistor disposed on one side of the interposer substrate, and a bonding connection line disposed on the other side of the interposer substrate. The bonding connection line includes a first lead and a second lead that are insulated from each other. The interposer substrate is provided with a first interposer via hole and a second interposer via hole. The first lead is electrically connected to the thin-film transistor by a conductive structure in the first interposer via hole and the fan-out region, and the second lead is electrically connected to the thin-film transistor by a conductive structure in the second interposer via hole and the fan-out region.

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