公开(公告)号：US20200006099A1

公开(公告)日：2020-01-02

申请号：US16484450

申请日：2018-01-31

Applicant: BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/677 ,  H01L23/544 ,  H01L21/68 ,  H01L23/00 ,  H01L21/02 ,  H01L21/56 ,  H01L21/66 ,  B29C45/14 ,  B29C35/08

Abstract: A chip mounting system (1) includes: a chip supplying unit (11) for supplying a chip (CP); a stage (31) for holding a substrate (WT) in an orientation in which a mounting face (WTf) for mounting the chip (CP) faces vertically downward (−Z direction); a head (33H) for holding the chip (CP) from the vertically downward direction (−Z direction); and a head drive unit (36) for, by causing vertically upward (+Z direction) movement of the head (33H) holding the chip (CP), causes the head (33H) to approach the stage (31) to mount the chip (CP) on the mounting face (WTf) of the substrate (WT).

公开(公告)号：US20240304594A1

公开(公告)日：2024-09-12

申请号：US18546590

申请日：2022-02-24

Applicant: BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/74 ,  H01L2224/74 ,  H01L2224/80009 ,  H01L2224/8009 ,  H01L2224/8013 ,  H01L2224/80895 ,  H01L2924/40

Abstract: A bonding method includes a substrate holding step of holding substrates (W1, W2), a first contact step of bringing central portions of the substrates (W1, W2) into contact with each other, a second contact step of, enlarging a contact area between the substrates (W1, W2) from central portions toward peripheral portions of the substrates (W1, W2), and a bonding step of, bonding the substrates (W1, W2) to each other by pressing only a peripheral portion of the substrate (W1) against a peripheral portion of the substrate (W2) while the substrates (W1, W2) are in contact with each other over entire bonding surfaces.

公开(公告)号：US20240066624A1

公开(公告)日：2024-02-29

申请号：US18262187

申请日：2022-01-21

Applicant: Tadatomo SUGA ,  BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI ,  Tadatomo SUGA

IPC: B23K20/24 ,  B23K20/00 ,  B23K20/02

CPC classification number: B23K20/24 ,  B23K20/008 ,  B23K20/023

Abstract: A bonding method for bonding two substrates (W1, W2) includes: a heat treatment process of heating a bonding surface to be bonded to each other of each of the two substrates (W1, W2) to a temperature higher than 60° C. in a reduced-pressure atmosphere; an activation treatment process of activating the bonding surface of each of the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the heat treatment process; and a bonding process of bonding the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the activation treatment process. In the heat treatment process, the state of heating the bonding surface of each of the two substrates (W1, W2) to a temperature higher than 60° C. may be maintained for 30 seconds or more in a state of maintaining the reduced-pressure atmosphere. The gas pressure in the heat treatment process may be 10−2 Pa or less.

公开(公告)号：US20230307284A1

公开(公告)日：2023-09-28

申请号：US18005606

申请日：2021-07-29

Applicant: BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI

IPC: H01L21/683 ,  H01L21/78 ,  H01L21/67

CPC classification number: H01L21/6836 ,  H01L21/7813 ,  H01L21/67132 ,  H01L2221/68336

Abstract: A chip bonding system (1) includes a dicing device (20) to, by dicing a dicing substrate stuck on a sheet (1E), generate a plurality of chips (CP) stuck on the sheet (1E) with chips (CP) adjacent to each other joined to each other via remaining uncut portions, an activation treatment device (60) to activate bonding surfaces of respective ones of the chips (CP) stuck to the sheet (TE), a sheet stretching device (40) to, by stretching the sheet (TE) on which the chips (CP) having bonding surfaces activated by the activation treatment device (60) are stuck, brings the chips (CP) into a state of being separated from one another, and a bonding device (30) to, by bringing one chip (CP) picked out of the chips (CP) separated from one another into contact with a substrate (WT), bond the one chip (CP) to the substrate (WT).

公开(公告)号：US20230136771A1

公开(公告)日：2023-05-04

申请号：US16347590

申请日：2017-11-06

Applicant: Tadatomo SUGA ,  BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI ,  Tadatomo SUGA

IPC: H01J37/32

Abstract: The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US20210313211A1

公开(公告)日：2021-10-07

申请号：US17269518

申请日：2018-11-15

Applicant: BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI

IPC: H01L21/68 ,  H01L21/67 ,  H01L23/00

Abstract: This chip mounting system simultaneously images an alignment mark disposed on a substrate (WT) and an alignment mark disposed on a chip (CP), with the alignment marks disposed on the substrate (WT) and the chip (CP) being separated by a first distance at which the alignment marks fall within a depth-of-field range of imaging devices (35a, 35b). The chip mounting system calculates a relative positional deviation amount between the substrate (WT) and the chip (CP) from the imaged images of the alignment marks imaged by the imaging devices (35a, 35b) and, based on the calculated positional deviation amount, relatively moves the chip (CP) with respect to the substrate (WT) in a direction in which the positional deviation amount therebetween decreases.

公开(公告)号：US20180068854A1

公开(公告)日：2018-03-08

申请号：US15810932

申请日：2017-11-13

Applicant: Tadatomo SUGA ,  BONDTECH CO., LTD.

Inventor： Tadatomo SUGA ,  Akira YAMAUCHI

IPC: H01L21/18 ,  H01J37/32 ,  B23K20/00 ,  H05H1/46 ,  H01L21/02 ,  H05H3/02

CPC classification number: H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

Abstract: A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

公开(公告)号：US20170221856A1

公开(公告)日：2017-08-03

申请号：US15519542

申请日：2015-10-19

Applicant: BONDTECH CO., LTD.

Inventor： Akira YAMAUCHI

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L24/83 ,  B23K20/023 ,  B23K20/233 ,  B23K20/24 ,  B23K37/0408 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/187 ,  H01L21/67092 ,  H01L21/67259 ,  H01L21/68 ,  H01L21/6831 ,  H01L21/6838 ,  H01L21/68735 ,  H01L23/544 ,  H01L24/75 ,  H01L24/80 ,  H01L24/94 ,  H01L2223/54426 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75272 ,  H01L2224/75303 ,  H01L2224/75305 ,  H01L2224/757 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75704 ,  H01L2224/75705 ,  H01L2224/75724 ,  H01L2224/75725 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/759 ,  H01L2224/75901 ,  H01L2224/7592 ,  H01L2224/75981 ,  H01L2224/80012 ,  H01L2224/80013 ,  H01L2224/8003 ,  H01L2224/80047 ,  H01L2224/8009 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80203 ,  H01L2224/80213 ,  H01L2224/80893 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80907 ,  H01L2224/80908 ,  H01L2224/80986 ,  H01L2224/83009 ,  H01L2224/8309 ,  H01L2224/83896 ,  H01L2224/83908 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2224/8001 ,  H01L2224/80009 ,  H01L2224/80121

Abstract: A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

公开(公告)号：US20170047225A1

公开(公告)日：2017-02-16

申请号：US15306303

申请日：2015-04-24

Applicant: Tadatomo SUGA ,  BONDTECH CO., LTD.

Inventor： Tadatomo SUGA ,  Akira YAMAUCHI

IPC: H01L21/18 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC classification number: H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

Abstract: A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

Abstract translation: 基板接合装置（100）包括真空室（200），用于激活第一基板（301）和第二基板（302）的各个结合面的表面活化部（610），以及台移动机构 ），用于使两个接合表面彼此接触，从而结合基板（301,302）。 为了激活真空室（200）中的接合表面，用用于激活接合表面的粒子束照射接合表面，并且同时接合表面也被硅颗粒照射。 由此，可以提高基板（301,302）的接合强度。